Method for manufacturing semiconductor device and substrate processing apparatus

• US 7,524,766 B2
• Filed: 07/15/2003
• Issued: 04/28/2009
• Est. Priority Date: 07/15/2002
• Status: Expired due to Term

• Current Assignee: Kokusai Electric Corp.
• Original Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Inventors: Horii, Sadayoshi, Itatani, Hideharu, Asai, Masayuki, Sano, Atsushi
• Primary Examiner(s): EVERHART, CARIDAD
• Application Number:
  US10/521,248
• Publication Number:
  US 20050250341A1
• Time in Patent Office: 2,114 Days
• Field of Search: 438/685, 438/686, 438/681, 257/E21.295, 257/E21.584, 257/E21.478, 427/97.6, 427/96.8
• US Class Current: 438/685
• CPC Class Codes: C23C 16/0272 Deposition of sub-layers, e.g. to promote the adhesion of the main coating
• CPC Class Codes: C23C 16/45542 Plasma being used non-continuously during the ALD reactions
• CPC Class Codes: H01L 28/55 with a dielectric comprising a perovskite structure material
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: H01L 28/90 having vertical extensions

Abstract

To obtain a conductive metal film having superior step coverage, adhesiveness, and high productivity. A conductive metal film or metal oxidized film suitable as a capacitor electrode is formed on a substrate by performing an excited-gas supplying step after a source gas supplying step. In the source gas supplying step, gas obtained by vaporizing an organic source is supplied to the substrate, and the gas thus supplied is allowed to be adsorbed on the substrate. In the excited-gas supplying step, oxygen or nitrogen containing gas excited by plasma is supplied to the substrate to decompose the source adsorbed on the substrate, thus forming a film. An initial film-forming stop is a step of forming the film by repeating the source gas supplying step and the excited-gas supplying step once or multiple times. A desired thickness can be obtained by one step of the initial film-forming step. However, thereafter, in addition to the initial film-forming step, the film-forming step may be two steps by performing the main film-forming step of simultaneously supplying the gas obtained by vaporizing the organic source and oxygen containing gas or nitrogen containing gas not excited by plasma by using a thermal CVD method.

Claims

1. A method of manufacturing a semiconductor device, comprising:

an initial film-forming step of forming an initial metal film on a substrate by executing once or a plurality of times, a source gas supplying step of supplying gas obtained by vaporizing an organic source to the substrate and allowing the organic source to be adsorbed on the substrate, and thereafter an excited-gas supplying step of supplying gas excited by plasma to the substrate, and causing the organic source adsorbed on the substrate to react with the gas excited by plasma, and forming a metal film on the substrate; and

a main film-forming step of forming a main metal film being the same film as the initial metal film on the initial metal film using a thermal CVD method, by simultaneously supplying the gas obtained by vaporizing the organic source and oxygen-containing gas or nitrogen-containing gas not excited by plasma,

the initial film-forming step and the main film-forming step being performed in the same processing chamber and performed at the same processing temperature.

2. The method of manufacturing the semiconductor device according to claim 1, wherein film thickness of the initial metal film formed in the initial film-forming step is set to be 5 to 15 nm, and film thickness of the main metal film formed in the main film-forming step is set to be 20 to 40 nm.

3. The method of manufacturing the semiconductor device according to claim 1, wherein

the processing temperature of the initial film-forming step and the main film-forming step are 250°

C. to 350°

C.