Radiation detector with an epitaxially grown semiconductor body
First Claim
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1. A radiation detector comprising:
- an epitaxially grown semiconductor body comprising a III-V semiconductor material and having a radiation entry side; and
a plurality of detector elements each having an active region provided for radiation reception and for signal generation, the plurality of detector elements being monolithically integrated into the semiconductor body, wherein a signal generated in a first detector element of the plurality of detector elements can be tapped off separately from a signal generated in a second detector element of the plurality of detector elements,each of the active regions of the first detector element and the second detector element is arranged between a barrier layer and a counter-barrier layer, and the barrier layer and the counter-barrier layer are of different conduction types,the first detector element and the second detector element are each assigned a contact layer and a counter-contact layer, and the contact layer and the counter-contact layer are monolithically integrated into the semiconductor body,at least one of the contact layer and the counter-contact layer is arranged between two adjacent ones of the plurality of detector elements, and the contact layer and the counter-contact layer are of different conduction types,the conduction types in the semiconductor body between two adjacent active regions, are identical,the first detector element is partly transmissive to visible radiation, andthe visible radiation that passes through the first detector element generates a signal in the second detector element.
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Abstract
A radiation detector comprising a plurality of detector elements (1, 2, 3) each having an active region (14, 24, 34) provided for radiation reception and for signal generation, the detector elements being monolithically integrated into a semiconductor body (5) of the radiation detector, a signal that is to be generated in a first detector element being able to be tapped off separately from a signal that is to be generated in a second detector element, and at least one of the active regions being designed for radiation reception in the visible spectral range.
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Citations
27 Claims
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1. A radiation detector comprising:
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an epitaxially grown semiconductor body comprising a III-V semiconductor material and having a radiation entry side; and a plurality of detector elements each having an active region provided for radiation reception and for signal generation, the plurality of detector elements being monolithically integrated into the semiconductor body, wherein a signal generated in a first detector element of the plurality of detector elements can be tapped off separately from a signal generated in a second detector element of the plurality of detector elements, each of the active regions of the first detector element and the second detector element is arranged between a barrier layer and a counter-barrier layer, and the barrier layer and the counter-barrier layer are of different conduction types, the first detector element and the second detector element are each assigned a contact layer and a counter-contact layer, and the contact layer and the counter-contact layer are monolithically integrated into the semiconductor body, at least one of the contact layer and the counter-contact layer is arranged between two adjacent ones of the plurality of detector elements, and the contact layer and the counter-contact layer are of different conduction types, the conduction types in the semiconductor body between two adjacent active regions, are identical, the first detector element is partly transmissive to visible radiation, and the visible radiation that passes through the first detector element generates a signal in the second detector element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A radiation detector comprising:
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an epitaxially grown semiconductor body having a radiation entry side; and a plurality of detector elements each having an active region provided for radiation reception and for signal generation, the plurality of detector elements being monolithically integrated into the semiconductor body; wherein; the semiconductor body comprises a III-V semiconductor material, the first and the second detector elements are each assigned a contact layer and a counter-contact layer and at least one of the contact layer and the counter-contact layer is arranged between two adjacent ones of the plurality of detector elements, the contact layers and the counter-contact layers being of different conduction types, the lateral extent of the detector elements increases as the vertical direction from the radiation entry side increases, terminals are arranged on and electrically conductively connected to the contact layers and the counter-contact layers such that a signal generated in a first detector element of the plurality of detector elements can be tapped off separately from a signal generated in a second detector element of the plurality of detector elements, the first detector element is partly transmissive to visible radiation, and visible radiation that passes through the first detector element generates a signal in the second detector element. - View Dependent Claims (24, 25, 26, 27)
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Specification