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High voltage transistor structure for semiconductor device

  • US 7,525,155 B2
  • Filed: 03/23/2006
  • Issued: 04/28/2009
  • Est. Priority Date: 11/26/2003
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device, comprising:

  • a substrate;

    a volume defined as being an active region, wherein at least part of the active region extends into the substrate;

    a gate electrode formed over the substrate, wherein at least part of the gate electrode is located in the active region;

    a spacer formed along edges of the gate electrode;

    a driven-in first doped region formed in the substrate, wherein boundaries of the first doped region are graded, and wherein a gate-side boundary of the first doped region extends laterally below part of the gate electrode; and

    a second doped region formed within the first doped region, wherein a gate-side boundary of the second doped region is spaced away from a closest edge of the gate electrode by a first spaced distance, wherein the gate-side boundary of the second doped region is spaced away from a closest edge of the spacer by a second spaced distance, and wherein the first spaced distance is greater than the second spaced distance.

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