Light emitting device and manufacturing method thereof

• US 7,525,165 B2
• Filed: 04/12/2001
• Issued: 04/28/2009
• Est. Priority Date: 04/17/2000
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Inukai, Kazutaka, Fukunaga, Takeshi, Koyama, Jun, Yamazaki, Shunpei
• Primary Examiner(s): Lewis; Monica
• Application Number:
  US09/832,867
• Publication Number:
  US 20010055841A1
• Time in Patent Office: 2,938 Days
• Field of Search: 257/350, 257/351, 257/411, 257 58- 75, 257/336, 257/337, 257/344, 257391-393, 257/163, 257/204, 257/408, 257/223, 257/227, 257/291, 257/292, 257/439, 257/443, 257/655, 257288-191, 438/163
• US Class Current: 257/408
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

The light emitting device according to the present invention is characterized in that a gate electrode comprising a plurality of conductive films is formed, and concentrations of impurity regions in an active layer are adjusted with making use of selectivity of the conductive films in etching and using them as masks. The present invention reduces the number of photolithography steps in relation to manufacturing the TFT for improving yield of the light emitting device and shortening manufacturing term thereof, by which a light emitting device and an electronic appliance are inexpensively provided.

Claims

1. A light emitting device comprising:

a pixel portion having an n-channel TFT and a light emitting element over a substrate,

the n-channel TFT comprising;

an active layer including;

a channel forming region;

an n-type impurity region (c) adjacent to the channel forming region;

an n-type impurity region (b) adjacent to the n-type impurity region (c); and

an n-type impurity region (a) adjacent to the n-type impurity region (b);

a gate insulating layer provided over the active layer;

a gate electrode provided over the gate insulating layer, the gate electrode including;

a first conductive film provided over the gate insulating layer; and

a second conductive film provided over the first conductive film;

a protecting film in contact with the gate insulating layer and the second conductive film;

a resin film provided over the protecting film wherein at least a part of the resin film is in contact with the protecting film;

a coloring layer provided between the protecting film and the resin film; and

a pixel electrode on and in contact with the resin film,

wherein the first conductive film overlaps the channel forming region and the n-type impurity region (c) with the gate insulating layer interposed therebetween,

wherein the second conductive film overlaps the channel forming region with the gate insulating layer and the first conductive film interposed therebetween, and the second conductive film has a thinner width as compared with the first conductive film, and

wherein the first conductive film comprises one of tantalum nitride and titanium nitride, and the second conductive film comprises tungsten.

4. The light emitting device as claimed in claim 1, wherein the first conductive film comprises tungsten, and the second conductive film comprises aluminum.

6. The light emitting device as claimed in claim 1, wherein the n-type impurity region (a) includes an n-type impurity element in concentrations from 1×

10²⁰ to 1×

10²¹ atoms/cm³, the n-type impurity region (b) includes an n-type impurity element in concentrations of from 2×

10¹⁶ to 5×

10¹⁹ atoms/cm³, and the n-type impurity region (c) includes an n-type impurity element in concentrations from 1×

10¹⁶ to 5×

10¹⁸ atoms/cm³,

8. The light emitting device as claimed in claim 1, wherein the gate electrode is covered by the protecting film comprising at least one of a silicon nitride film and a silicon oxynitride film.

10. The light emitting device as claimed in claim 1, wherein the light emitting device is one selected from the group consisting of an EL display, a video camera, a digital camera, a portable computer, a personal computer, a portable telephone, and a car audio stereo.

2. A light emitting device comprising:

a driver circuit having an n-channel TFT over a substrate, the n-channel TFT comprising;

an active layer including;

a channel forming region;

an n-type impurity region (c) adjacent to the channel forming region;

an n-type impurity region (b) adjacent to the n-type impurity region (c); and

an n-type impurity region (a) adjacent to the n-type impurity region (b);

a gate insulating layer provided over the active layer;

a gate electrode provided over the gate insulating layer, the gate electrode including;

a first conductive film provided over the gate insulating layer; and

a second conductive film provided over the first conductive film;

a protecting film in contact with the gate insulating layer and the second conductive film;

a resin film provided over the protecting film wherein at least a part of the resin film is in contact with the protecting film;

a coloring layer provided between the protecting film and the resin film; and

a pixel portion comprising;

a light emitting element over the substrate; and

a pixel electrode formed on and in contact with the resin film,

wherein the first conductive film overlaps the channel forming region and the n-type impurity region (c) with the gate insulating layer interposed therebetween, and

wherein the second conductive film overlaps the channel forming region with the gate insulating layer and the first conductive film interposed therebetween, and the second conductive film has a thinner width as compared with the first conductive film.

3. The light emitting device as claimed in claim 2, wherein the first conductive film comprises one of tantalum nitride and titanium nitride, and the second conductive film comprises tungsten.

5. The light emitting device as claimed in claim 2, wherein the first conductive film comprises tungsten, and the second conductive film comprises aluminum.

7. The light emitting device as claimed in claim 2, wherein the n-type impurity region (a) includes an n-type impurity element in concentrations from 1×

10²⁰ to 1×

10²¹ atoms/cm³, the n-type impurity region (b) includes an n-type impurity element in concentrations of from 2×

10¹⁶ to 5×

10¹⁹ atoms/cm³, and the n-type impurity region (c) includes an n-type impurity element in concentrations from 1×

10¹⁶ to 5×

10¹⁸ atoms/cm³.

9. The light emitting device as claimed in claim 2, wherein the gate electrode is covered by the protecting film comprising at least one of a silicon nitride film and a silicon oxynitride film.

11. The light emitting device as claimed in claim 2, wherein the light emitting device is one selected from the group consisting of an EL display, a video camera, a digital camera, a portable computer, a personal computer, a portable telephone, and a car audio stereo.