Optimizing selected variables of an optical metrology system
First Claim
1. A system for examining a patterned structure formed on a semiconductor wafer using an optical metrology model, the system comprising:
- a first fabrication cluster configured to process a wafer, the wafer having a first patterned and a first unpatterned structure, the first patterned structure having underlying film thickness, critical dimension, and profile;
a metrology cluster including one or more optical metrology devices coupled to the first fabrication cluster, the metrology cluster configured to measure diffraction signals off the first patterned and the first unpatterned structure;
an optical metrology model optimizer coupled to the metrology cluster, the metrology model optimizer configured to optimize an optical metrology model of the first patterned structure using one or more measured diffraction signals off the first patterned structure and with floating profile parameters, material refraction parameters, and metrology device parameters; and
a real time profile estimator coupled to the optical model optimizer and the metrology cluster, configured to use the optimized optical metrology model from the optical metrology model optimizer, the measured diffraction signals off the first patterned structure, and a fixed value within a range of values for at least one parameter from amongst the material refraction parameters and the metrology device parameters, and wherein the real time profile estimator is configured to create an output comprising underlying film thickness, critical dimension, and profile of the first patterned structure.
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Abstract
A system for examining a patterned structure formed on a semiconductor wafer using an optical metrology model includes a first fabrication cluster, a metrology cluster, an optical metrology model optimizer, and a real time profile estimator. The first fabrication cluster processes a wafer, the wafer having a first patterned and a first unpatterned structure. The metrology cluster measures diffraction signals off the first patterned and first unpatterned structure. The metrology model optimizer optimizes an optical metrology model of the first patterned structure. The real time profile estimator creates an output comprising underlying film thickness, critical dimension, and profile of the first patterned structure.
51 Citations
31 Claims
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1. A system for examining a patterned structure formed on a semiconductor wafer using an optical metrology model, the system comprising:
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a first fabrication cluster configured to process a wafer, the wafer having a first patterned and a first unpatterned structure, the first patterned structure having underlying film thickness, critical dimension, and profile; a metrology cluster including one or more optical metrology devices coupled to the first fabrication cluster, the metrology cluster configured to measure diffraction signals off the first patterned and the first unpatterned structure; an optical metrology model optimizer coupled to the metrology cluster, the metrology model optimizer configured to optimize an optical metrology model of the first patterned structure using one or more measured diffraction signals off the first patterned structure and with floating profile parameters, material refraction parameters, and metrology device parameters; and a real time profile estimator coupled to the optical model optimizer and the metrology cluster, configured to use the optimized optical metrology model from the optical metrology model optimizer, the measured diffraction signals off the first patterned structure, and a fixed value within a range of values for at least one parameter from amongst the material refraction parameters and the metrology device parameters, and wherein the real time profile estimator is configured to create an output comprising underlying film thickness, critical dimension, and profile of the first patterned structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A system for examining a patterned structure formed on a semiconductor wafer using an optical metrology model, the system comprising:
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a first fabrication cluster configured to process wafers, the wafers having a first patterned and a first unpatterned structures, the patterned structures having underlying film thickness, critical dimension, and profile; a metrology cluster including one or more optical metrology devices coupled to the first fabrication cluster, the metrology cluster configured to measure diffraction signals off the first patterned and the first unpatterned structures; an optical metrology model optimizer coupled to the first fabrication cluster and the metrology cluster, the model optimizer configured to optimize an optical metrology model of the first patterned structure using one or more measured diffraction signals off the first patterned structure and floating profile parameters, material refraction parameters, and metrology device parameters; and a profile server coupled to the optical model optimizer and the metrology cluster, configured to use the optimized optical metrology model from the optical metrology model optimizer, the measured diffraction signals off the first patterned structures, and a fixed value within a range of values for at least one parameter from amongst the material refraction parameters and the metrology device parameters, and wherein the profile server is configured to create an output comprising underlying film thickness, critical dimension, and profile of the first patterned structure. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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Specification