Magnetoresistive element, magnetoresistive head, magnetic recording apparatus, and magnetic memory

• US 7,525,776 B2
• Filed: 11/09/2005
• Issued: 04/28/2009
• Est. Priority Date: 11/09/2004
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Fukuzawa, Hideaki, Yuasa, Hiromi, Koui, Katsuhiko, Iwasaki, Hitoshi
• Primary Examiner(s): KLIMOWICZ, WILLIAM JOSEPH
• Application Number:
  US11/269,878
• Publication Number:
  US 20060098353A1
• Time in Patent Office: 1,266 Days
• Field of Search: 360324-3242
• US Class Current: 360/324.12
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: G11B 5/3929 Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
• CPC Class Codes: H01F 10/3259 Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer
• CPC Class Codes: H10B 61/10 comprising components having two electrodes, e.g. diodes or MIM elements
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

A magnetoresistive element has a magnetization pinned layer a magnetization direction of which is substantially pinned in one direction, a magnetization free layer a magnetization direction of which varies depending on an external field, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating the insulating layer, the magnetization pinned layer or magnetization free layer located under the spacer layer comprising crystal grains separated by grain boundaries extending across a thickness thereof, in which, supposing that an in-plane position of one end of each of the crystal grains is set to 0 and an in-plane position of a grain boundary adjacent to the other end of the crystal grain is set to 100, the current path corresponding the crystal grain is formed on a region in a range between 20 and 80 of the in-plane position.

Claims

1. A magnetoresistive element comprising:

a magnetization pinned layer a magnetization direction of which is substantially pinned in one direction;

a magnetization free layer a magnetization direction of which varies depending on an external field; and

a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating the insulating layer,

the magnetization pinned layer or magnetization free layer located under the spacer layer comprising crystal grains separated by grain boundaries extending across a thickness thereof,

wherein, an in-plane position of one end of each of the crystal grains is set to 0, an in-plane position of a grain boundary adjacent to the other end of the crystal grain is set to 100, and the current path corresponding to each crystal grain is formed on a region of the crystal grain in a range between 20 and 80 of the in-plane position.

2. The magnetoresistive element according to claim 1, wherein a crystal lattice is continuously formed between each of the current paths and the magnetization pinned layer or magnetization free layer located under the current path and the magnetization free layer or magnetization pinned layer located over the current path.

3. The magnetoresistive element according to claim 1, wherein each of the current paths contains at least one element selected from the group consisting of Cu, Au and Ag.

4. The magnetoresistive element according to claim 1, wherein the insulating layer is an oxide, a nitride or an oxynitride containing at least one element selected from the group consisting of Al, Si, Hf, Ti, Ta, Mo, W, Nb, Cr, Mg, and Zr.

5. The magnetoresistive element according to claim 1, wherein the magnetization pinned layer constitutes a body-centered cubic structure at an interface with the spacer layer.

6. The magnetoresistive element according to claim 1, wherein the magnetization pinned layer comprises a layer in contact with the spacer layer which is formed of an Fe alloy containing at least 30 atomic % of Fe.

7. The magnetoresistive element according to claim 1, wherein the magnetization pinned layer comprises a stacked film of a ferromagnetic layer and a Cu layer of thickness of 0.1 nm or more and 1 nm or less.

8. A magnetoresistive head comprising the magnetoresistive element according to claim 1.

9. A magnetic recording apparatus comprising the magnetoresistive head according to claim 8.

10. A magnetic memory comprising the magnetoresistive element according to claim 1.

11. A magnetoresistive element comprising:

a magnetization pinned layer a magnetization direction of which is substantially pinned in one direction;

a magnetization free layer a magnetization direction of which varies depending on an external field; and

a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating the insulating layer,

the magnetization pinned layer or magnetization free layer located under the spacer layer comprising crystal grains separated by grain boundaries extending across a thickness thereof,

wherein each of the current paths is formed on a region at least 3 nm away from ends of each of the crystal grains contained in the magnetization pinned layer or magnetization free layer located under the spacer layer.

12. The magnetoresistive element according to claim 11, wherein a crystal lattice is continuously formed between each of the current paths and the magnetization pinned layer or magnetization free layer located under the current path and the magnetization free layer or magnetization pinned layer located over the current path.

13. The magnetoresistive element according to claim 11, wherein each of the current paths contains at least one element selected from the group consisting of Cu, Au and Ag.

14. The magnetoresistive element according to claim 11, wherein the insulating layer is an oxide or a nitride containing at least one element selected from the group consisting of Al, Si, Hf, Ti, Ta, Mo, W, Nb, Cr, Mg, and Zr.

15. The magnetoresistive element according to claim 11, wherein the magnetization pinned layer constitutes a body-centered cubic structure at an interface with the spacer layer.

16. The magnetoresistive element according to claim 11, wherein the magnetization pinned layer comprises a layer in contact with the spacer layer which is formed of an Fe alloy containing at least 30 atomic % of Fe.

17. The magnetoresistive element according to claim 11, wherein the magnetization pinned layer comprises a stacked film of a ferromagnetic layer and a Cu layer of thickness of 0.1 nm or more and 1 nm or less.

18. A magnetoresistive element comprising:

a magnetization pinned layer a magnetization direction of which is substantially pinned in one direction;

a magnetization free layer a magnetization direction of which varies depending on an external field; and

a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating the insulating layer,

wherein dispersion of a crystal orientation angle of each of the current paths is at most 5°

.

19. The magnetoresistive element according to claim 18, wherein the dispersion of the crystal orientation angle is at most 5°

for all of the magnetization pinned layer, the current paths, and the magnetization free layer.