Cd1−xZnxS high performance TCR material for uncooled microbolometers used in infrared sensors and method of making same
First Claim
1. A film material for microbolometers used in uncooled infrared sensors comprising:
- at least one of a cadmium component and a zinc component; and
a sulfur component,said film material being represented as Cd1-xZnxS, wherein x has a value in the range of approximately 0-0.06, and wherein said value of thermal coefficient of resistance (TCR) is in the range of 1.5% to 3.7%, said film material being capable of deposition to form a thickness of no more than approximately 2000 Angstrom on a wafer,said deposited film material providing a relatively high value of TCR and being capable of fabrication at temperatures compatible with and not harmful to CMOS devices present on said wafer.
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Abstract
A Cd1-xZnxS film material, with a high value of thermal coefficient of resistance, in the range of 1.5% to 3.7%. The Cd1-xZnxS material has excellent characteristics for use in a microbolometer-type uncooled infrared sensor. The film material can be deposited on microbolometer membranes or any other wafer for different applications. The film material can be deposited using the MOCVD technique, thermal evaporation or a different technique to form the film material over the wafer. The Cd1-xZnxS properties can be modified controlling certain deposition parameters and different annealing techniques. The process is performed at temperature compatible with CMOS technology.
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Citations
15 Claims
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1. A film material for microbolometers used in uncooled infrared sensors comprising:
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at least one of a cadmium component and a zinc component; and a sulfur component, said film material being represented as Cd1-xZnxS, wherein x has a value in the range of approximately 0-0.06, and wherein said value of thermal coefficient of resistance (TCR) is in the range of 1.5% to 3.7%, said film material being capable of deposition to form a thickness of no more than approximately 2000 Angstrom on a wafer, said deposited film material providing a relatively high value of TCR and being capable of fabrication at temperatures compatible with and not harmful to CMOS devices present on said wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A film material for microbolometers used in uncooled infrared sensors manufactured by a method comprising:
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performing a growth process to obtain a film material comprising; at least one of a cadmium component and a zinc component; and a sulfur component, said film material being represented by Cd1-xZnxS, wherein x has a value in the range of approximately 0-0.06, and wherein said value of thermal coefficient of resistance (TCR), is in the range of 1.5% to 3.7%, said film material being capable of deposition to form a thickness of no more than approximately 2000 Angstrom on a wafer; depositing said film material on said wafer by establishing deposition parameters comprising; pressure; temperature, in order to determine resistivity of said deposited film material; growth rate; and wafer type; and performing an annealing technique, such that said film material provides a relatively high value of TCR and is fabricated at temperatures compatible with and not harmful to GAGS devices present on said wafer.
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Specification