Method of manufacturing complementary diodes
First Claim
1. A method of making complementary diodes, comprising:
- a) forming a first patterned semiconductor layer on a substrate, the first patterned semiconductor layer having a first conductivity type;
b) forming a second patterned semiconductor layer on the substrate, the second patterned semiconductor layer having a second conductivity type;
c) forming a first patterned gate structure on the first patterned semiconductor layer and a second patterned gate structure on the second patterned semiconductor layer,d) forming a patterned insulator layer over the first and second patterned semiconductor layers, the first and second patterned gate structures, and the substrate; and
e) forming a first patterned metal layer on the patterned insulator layer, electrically connecting the first and second patterned semiconductor layers with the first and second patterned gate structures.
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Abstract
Process variation-tolerant diodes and diode-connected thin film transistors (TFTs), printed or patterned structures (e.g., circuitry) containing such diodes and TFTs, methods of making the same, and applications of the same for identification tags and sensors are disclosed. A patterned structure comprising a complementary pair of diodes or diode-connected TFTs in series can stabilize the threshold voltage (Vt) of a diode manufactured using printing or laser writing techniques. The present invention advantageously utilizes the separation between the Vt of an NMOS TFT (Vtn) and the Vt of a PMOS TFT (Vtp) to establish and/or improve stability of a forward voltage drop across a printed or laser-written diode. Further applications of the present invention relate to reference voltage generators, voltage clamp circuits, methods of controlling voltages on related or differential signal transmission lines, and RFID and EAS tags and sensors.
31 Citations
27 Claims
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1. A method of making complementary diodes, comprising:
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a) forming a first patterned semiconductor layer on a substrate, the first patterned semiconductor layer having a first conductivity type; b) forming a second patterned semiconductor layer on the substrate, the second patterned semiconductor layer having a second conductivity type; c) forming a first patterned gate structure on the first patterned semiconductor layer and a second patterned gate structure on the second patterned semiconductor layer, d) forming a patterned insulator layer over the first and second patterned semiconductor layers, the first and second patterned gate structures, and the substrate; and e) forming a first patterned metal layer on the patterned insulator layer, electrically connecting the first and second patterned semiconductor layers with the first and second patterned gate structures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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Specification