Integrated matching network and method for manufacturing integrated matching networks
First Claim
1. A method for manufacturing a radio frequency (RF) device having an integrated matching network, the method comprising the steps of:
- coupling a first die in which a power amplifier circuit is formed to a first substrate, the first die having a first surface, a second opposing surface, and an output of the power amplifier circuit, and wherein the first surface of the first die is coupled to the first substrate;
coupling a second die in which a first integrated passive device (IPD) is formed to the first substrate, the second die having a first surface, a second opposing surface, and an input to the first IPD, wherein the first IPD has a first capacitance, and the first surface of the second die is coupled to the first substrate; and
coupling a first metal interconnect formed on a second substrate between the second surface of the first die and the second surface of the second die in order to couple the output of the power amplifier circuit with the input to the first IPD, wherein the first metal interconnect has a first inductance that is coupled in series with the first capacitance, and wherein the first inductance and the first capacitance provides a matching impedance for the power amplifier circuit.
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Abstract
An integrated matching network and method for manufacturing an integrated matching network are provided. The method includes forming (405) a first die on a substrate, forming (410) a second die on the substrate, and forming (415) a metallization layer on the first and second dies. The second die has a capacitance, the metallization layer has an inductance, and the capacitance and inductance together provide a shunt impedance from the first die to the substrate. The integrated matching network includes a first die having a PA (101), a second die having a capacitor (102), and a metal interconnect (108) coupled to the PA and the first capacitor. The metal interconnect (108) has an inductance. The capacitor (102) and metal interconnect (108) form a shunt impedance.
7 Citations
20 Claims
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1. A method for manufacturing a radio frequency (RF) device having an integrated matching network, the method comprising the steps of:
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coupling a first die in which a power amplifier circuit is formed to a first substrate, the first die having a first surface, a second opposing surface, and an output of the power amplifier circuit, and wherein the first surface of the first die is coupled to the first substrate; coupling a second die in which a first integrated passive device (IPD) is formed to the first substrate, the second die having a first surface, a second opposing surface, and an input to the first IPD, wherein the first IPD has a first capacitance, and the first surface of the second die is coupled to the first substrate; and coupling a first metal interconnect formed on a second substrate between the second surface of the first die and the second surface of the second die in order to couple the output of the power amplifier circuit with the input to the first IPD, wherein the first metal interconnect has a first inductance that is coupled in series with the first capacitance, and wherein the first inductance and the first capacitance provides a matching impedance for the power amplifier circuit. - View Dependent Claims (2, 3, 4, 5, 7, 8, 9, 10, 11)
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6. A method for manufacturing an integrated matching network, the method comprising the steps of:
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coupling a first die to a substrate, the first die having first and second opposing surfaces, the first surface of the first die coupled to the substrate; coupling a second die to the substrate, the second die having first and second opposing surfaces and a capacitance, the first surface of the second die coupled to the substrate; and coupling a first metallization layer of an inductive component to the second surface of the first die and the second surface of the second die, the first metallization layer having an inductance, the capacitance and the inductance together providing a shunt impedance from the first die to the substrate, wherein the inductive component includes an insulator substrate and the first metallization layer coupled to the insulator substrate.
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12. A method for manufacturing a radio frequency (RF) device having an integrated matching network, the method comprising the steps of:
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coupling an RF active die to a first substrate, the RF active die having first and second opposing surfaces, an RF active component, and an output of the RF active component, the first surface of the RF active die coupled to the first substrate; coupling a first integrated passive device (IPD) to the first substrate, the first IPD having first and second opposing surfaces, a first capacitance incorporated therewith, and a input, the first surface of the first IPD coupled to the first substrate; and coupling a first metal interconnect formed on a second substrate between the second surface of the die and the second surface of the first IPD in order to couple the output of the RF active component with the input of the first IPD, wherein the first metal interconnect has an inductance that is coupled in series with the first capacitance, and wherein the inductance and the first capacitance provide a matching impedance for the RF active component. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification