Order selected overlay metrology

• US 7,528,941 B2
• Filed: 05/29/2007
• Issued: 05/05/2009
• Est. Priority Date: 06/01/2006
• Status: Active Grant

• Current Assignee: Kla-Tencor Technologies Corporation (KLA Corporation)
• Original Assignee: Kla-Tencor Technologies Corporation (KLA Corporation)
• Inventors: Seligson, Joel L., Levinski, Vladimir, Adel, Michael E., Kandel, Daniel
• Primary Examiner(s): Lauchman; L. G.
• Assistant Examiner(s): ALLI, IYABO
• Application Number:
  US11/754,892
• Publication Number:
  US 20070279630A1
• Time in Patent Office: 707 Days
• Field of Search: 3562372-2376, 356/600, 356/601
• US Class Current: 356/237.2
• CPC Class Codes: G03F 7/70633 Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

Abstract

Disclosed are apparatus and methods for measuring a characteristic, such as overlay, of a semiconductor target. In general, order-selected imaging and/or illumination is performed while collecting an image from a target using a metrology system. In one implementation, tunable spatial modulation is provided only in the imaging path of the system. In other implementations, tunable spatial modulation is provided in both the illumination and imaging paths of the system. In a specific implementation, tunable spatial modulation is used to image side-by-side gratings with diffraction orders ±n. The side-by-side gratings may be in different layers or the same layer of a semiconductor wafer. The overlay between the structures is typically found by measuring the distance between centers symmetry of the gratings. In this embodiment, only orders ±n for a given choice of n (where n is an integer and not equal to zero) are selected, and the gratings are only imaged with these diffraction orders.

Claims

1. An optical apparatus for measuring a characteristic of a semiconductor target, comprising:

an illumination system for generating and directing illumination rays towards a semiconductor target via an illumination path; and

an imaging system for directing light scattered from the semiconductor target in response to the illumination rays, the imaging system comprising;

an image sensor for forming an image from scattered light;

one or more optical components that are arranged to direct the scattered light to the sensor via an imaging path; and

a tunable spatial modulation device for selectively directing specific diffraction orders of the scattered light towards the image sensor while blocking selected other diffraction orders of the scattered light from reaching the image sensor.

2. An optical apparatus as recited in claim 1, wherein the tunable spatial modulation device is positioned at a plane that is substantially conjugate to the pupil of the imaging path.

3. An optical apparatus as recited in claim 2, wherein the imaging system further comprises relay optics for receiving the scattered light and forming the plane that is substantially conjugate to the pupil of the imaging path.

4. An optical apparatus as recited in claim 1, wherein the semiconductor target is formed from one or more grating structures and the tunable spatial modulation device is configurable to selectively direct only one or more ±

n pairs of orders towards the sensor, wherein n is an integer that is not zero.

5. An optical apparatus as recited in claim 1, wherein the semiconductor target is formed from one or more grating structures and the tunable spatial modulation device is configurable to selectively direct only diffraction orders ±

1 towards the sensor.

6. An optical apparatus as recited in claim 1, wherein the illumination system includes a second tunable spatial modulation device for selectively directing one or more of the illumination rays at specific illumination angles and numerical apertures towards the semiconductor target, wherein the second tunable spatial modulation device is positioned at a plane that is substantially conjugate to the pupil of the illumination path.

7. An optical apparatus as recited in claim 1, wherein the illumination system includes a second tunable spatial modulation device for selectively directing illumination rays substantially normal to the semiconductor target and at various numerical apertures towards the semiconductor target, wherein the second tunable spatial modulation device is positioned at a plane that is substantially conjugate to the pupil of the illumination path.

8. An optical apparatus as recited in claim 1, wherein the tunable spatial modulation device includes one or more of the following:

a replaceable mechanical aperture, a spatial light modulator (SLM), or a diffractive optical element (DOE).

9. An optical apparatus as recited in claim 1, wherein the pupil of the imaging path is inaccessible and the tunable spatial modulation device is positioned at a plane that is the closest accessible plane to the pupil of the imaging path.

10. A method of measuring a characteristic of a semiconductor target, comprising:

determining a set of diffraction orders to use for imaging the semiconductor target;

configuring a metrology tool so as to image the target using the determined set of diffraction orders;

collecting an image of the target that is formed from the determined set of diffraction orders; and

determining and storing an overlay error based on the collected image.

11. A method as recited in claim 10, wherein the semiconductor target is formed from side-by-side gratings that are each formed in a different layer or by a different process and that are arranged for determining an alignment error between the side-by-side gratings, and wherein the determined set of diffraction orders include only ±

n diffraction orders, wherein n is an integer and not equal to zero so as to maximize contrast of the collected image.

12. A method as recited in claim 10, wherein the semiconductor target is formed from side-by-side gratings that are each formed in a different layer or by a different process and that are arranged for determining an alignment error between the side-by-side gratings, and wherein the determined set of diffraction orders include only ±

1 diffraction orders, so as to maximize contrast of the collected image.

13. A method as recited in claim 10, wherein the semiconductor target is formed from an upper grating over a lower grating that formed in different layers that are arranged for determining an overlay error between the upper and lower gratings, and wherein the scattered light has characteristics associated with the fine pitch of the gratings and with a course pitch produced by a Moiré

effect, and wherein the semiconductor target is imaged using only ±

n diffraction orders of the course pitch, wherein n is an integer and not equal to zero, and the fine pitch is left unresolved.

14. A method as recited in claim 10, wherein the semiconductor target is formed from an upper grating over a lower grating that formed in different layers that are arranged for determining an overlay error between the upper and lower gratings, and wherein the scattered light has characteristics associated with the fine pitch of the gratings and with a course pitch produced by a Moiré

effect, and wherein the semiconductor target is imaged using only ±

n diffraction orders of the fine pitch, wherein n is an integer and not equal to zero, and using many orders of the course pitch, including the zero order.

15. A method as recited in claim 10, wherein the semiconductor target is formed from an upper grating over a lower grating that formed in different layers that are arranged for determining an overlay error between the upper and lower gratings, and wherein the scattered light has characteristics associated with the fine pitch of the gratings and with a course pitch produced by a Moiré

effect, and wherein the semiconductor target is imaged using only ±

n diffraction orders of the fine pitch, wherein n is an integer and not equal to zero, and using only ±

m diffraction orders of the course pitch, wherein m is an integer and not equal to zero.

16. A method as recited in claim 10, wherein the semiconductor target is formed from a first set of gratings having a first characteristic and a second set of gratings having a second characteristic that differs from the first characteristic.

17. A method as recited in claim 16, wherein the first and second characteristics correspond to first and second pitch values.

18. A method as recited in claim 16, wherein the first and second characteristics correspond to first and second rotation angles.

19. A method as recited in claim 16, wherein it is determined that there is no overlay error when a center of symmetry of the target equals a geometric center of the target.

20. A method as recited in claim 16, wherein m differs from n.

21. A method as recited in claim 16, wherein m equals n.

22. At least one computer readable storage medium having computer program instructions stored thereon that are arranged to perform the following operations:

determining a set of diffraction orders to use for imaging the semiconductor target;

configuring a metrology tool so as to image the target using the determined set of diffraction orders;

collecting an image of the target that is formed from the determined set of diffraction orders; and

determining and storing an overlay error based on the collected image.

23. At least one computer readable storage medium as recited in claim 22, wherein the semiconductor target is formed from a first set of gratings having a first characteristic and a second set of gratings having a second characteristic that differs from the first characteristic.

24. At least one computer readable storage medium as recited in claim 22, wherein the first and second characteristics correspond to first and second pitch values.

25. At least one computer readable storage medium as recited in claim 22, wherein the first and second characteristics correspond to first and second rotation angles.

26. At least one computer readable storage medium as recited in claim 22, wherein it is determined that there is no overlay error when a center of symmetry of the target equals a geometric center of the target.

27. An optical apparatus for measuring a characteristic of a semiconductor target, comprising:

an illumination system for generating and directing illumination rays towards a semiconductor target via an illumination path, wherein the illumination system includes a first tunable spatial modulation device for producing coherent modulated illumination rays that are directed towards the semiconductor target; and

an imaging system for directing light scattered from the semiconductor target in response to the selectively modulated illumination rays, the imaging system comprising;

an image sensor for forming an image from scattered light;

one or more optical components that are arranged to direct the scattered light to the sensor via an imaging path; and

a second tunable spatial modulation device positioned at a pupil of the imaging path for selectively directing specific diffraction orders of the scattered light towards the image sensor while blocking selected other diffraction orders of the scattered light from reaching the image sensor.