Microstructured component and method for its manufacture
First Claim
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1. A microstructured component having a layered construction, comprising:
- a carrier including at least one glass layer;
a component structure including a first silicon layer directly bonded to the glass layer, the component structure including movable structure elements; and
a cap arranged over the component structure and bonded directly to the glass layer, wherein the component structure includes a first silicon wafer and is bonded to the glass layer by anodic bonding at a temperature of approximately 400°
C., wherein the first silicon layer has a thickness greater than 50 μ
m, wherein the cap is configured as a mechanical stop for the movable structure elements, wherein the component structure is enclosed in a vacuum between the glass layer and the cap, and wherein a pressure of the vacuum is approximately 100 μ
bar to 1 mbar.
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Abstract
A microstructured component having a layered construction may allow implementation of component structures having a layer thickness of more than 50 μm, e.g., more than 100 μm. Capping of the component structure may allow vacuum enclosure of the component structure with a hermetically sealed electrical connection. The layered construction of the microstructured component includes a carrier including at least one glass layer, e.g., a PYREX™ layer, a component structure, arranged in a silicon layer, which is bonded to the glass layer, and a cap, which is positioned over the component structure and is also bonded to the glass layer.
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Citations
7 Claims
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1. A microstructured component having a layered construction, comprising:
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a carrier including at least one glass layer; a component structure including a first silicon layer directly bonded to the glass layer, the component structure including movable structure elements; and a cap arranged over the component structure and bonded directly to the glass layer, wherein the component structure includes a first silicon wafer and is bonded to the glass layer by anodic bonding at a temperature of approximately 400°
C., wherein the first silicon layer has a thickness greater than 50 μ
m, wherein the cap is configured as a mechanical stop for the movable structure elements, wherein the component structure is enclosed in a vacuum between the glass layer and the cap, and wherein a pressure of the vacuum is approximately 100 μ
bar to 1 mbar. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification