In-line lithography and etch system

• US 7,531,368 B2
• Filed: 03/30/2007
• Issued: 05/12/2009
• Est. Priority Date: 03/30/2007
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Winter, Thomas E., Winkler, Mark G.
• Primary Examiner(s): Lindsay, Jr.; Walter L
• Assistant Examiner(s): Ahmadi; Mohsen
• Application Number:
  US11/730,202
• Publication Number:
  US 20080241969A1
• Time in Patent Office: 774 Days
• Field of Search: 257/E21.525, 257/E21.529
• US Class Current: 438/5
• CPC Class Codes: G03F 7/70525 Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
• CPC Class Codes: G03F 7/70991 Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
• CPC Class Codes: G05B 19/41865 characterised by job scheduling, process planning, material flow
• CPC Class Codes: G05B 2219/45031 Manufacturing semiconductor wafers
• CPC Class Codes: Y02P 90/02 Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]
• CPC Class Codes: Y02P 90/80 Management or planning

Abstract

The invention can provide a method of processing a wafer using Site-Dependent (S-D) processing sequences that can include S-D creation procedures, S-D evaluation procedures, and S-D transfer sequences. The S-D creation procedures can be performed using S-D processing elements, the S-D evaluation procedures can be performed using S-D evaluation elements, and S-D transfer sequences can be performed using site-dependent transfer subsystems. Site-dependent data can be stored in site-dependent libraries and/or databases.

Claims

1. A method of processing a plurality of wafers comprising:

receiving the plurality of wafers by a processing system, the processing system including Site-Dependent (S-D) and Non-Site-Dependent (N-S-D) subsystems, each wafer having wafer data associated therewith, wherein the wafer data includes S-D confidence data and/or N-S-D confidence data;

establishing a first set of S-D wafers using the S-D confidence data and/or N-S-D confidence data;

determining first S-D processing sequences for the first set of S-D wafers, the first set of S-D wafers being processed in first S-D subsystems using the first S-D processing sequences, wherein wafer state data is used to establish the first S-D processing sequences;

transferring the first set of S-D wafers to one or more first S-D processing elements in the first S-D subsystems, the first S-D processing sequences being used to determine the one or more first S-D processing elements;

collecting first S-D subsystem processing data before, during, and/or after the first S-D processing sequences are performed using the first set of S-D wafers;

establishing first S-D confidence data for one or more wafers in the first set of S-D wafers using the wafer data and/or the first S-D subsystem processing data;

establishing additional sets of S-D wafers using the first S-D confidence data, the S-D confidence data, or the N-S-D confidence data, or any combination thereof; and

transferring the additional sets of S-D wafers to one or more additional S-D processing elements in additional subsystems, with additional S-D processing sequences being used to determine the one or more additional S-D processing elements.

2. The method of claim 1, further comprising:

establishing a first set of N-S-D wafers using the S-D confidence data and/or N-S-D confidence data;

determining first N-S-D processing sequences for the first set of N-S-D wafers, the first set of N-S-D wafers being processed in first N-S-D subsystems using the first N-S-D processing sequences, wherein wafer state data is used to establish the first N-S-D processing sequences; and

transferring the first set of N-S-D wafers to one or more first N-S-D processing elements in the first N-S-D subsystems, the first N-S-D processing sequences being used to determine the one or more first N-S-D processing elements.

3. The method of claim 2, further comprising:

establishing other sets of N-S-D wafers using the S-D confidence data and/or N-S-D confidence data;

determining other N-S-D processing sequences for the other sets of N-S-D wafers, the other sets of N-S-D wafers being processed in other N-S-D subsystems using the other N-S-D processing sequences, wherein wafer state data is used to establish the other N-S-D processing sequences; and

transferring the other sets of N-S-D wafers to one or more other N-S-D processing elements in the other N-S-D subsystems, the other N-S-D processing sequences being used to determine the one or more other N-S-D processing elements.

4. The method of claim 3, further comprising:

collecting other N-S-D subsystem processing data before, during, and/or after the other N-S-D processing sequences are performed using the other sets of N-S-D wafers;

establishing other N-S-D confidence data for one or more wafers in the other sets of N-S-D wafers using the wafer data and/or the other subsystem N-S-D processing data;

establishing additional sets of N-S-D wafers using the other N-S-D confidence data, the S-D confidence data, or the N-S-D confidence data, or any combination thereof; and

transferring the additional sets of N-S-D wafers to one or more additional N-S-D processing elements in additional subsystems, with additional N-S-D processing sequences being used to determine the one or more additional N-S-D processing elements.

5. The method of claim 4, wherein the establishing other N-S-D confidence data comprises:

establishing a first N-S-D confidence value for a first N-S-D wafer in the other sets of N-S-D wafers using the other N-S-D subsystem processing data;

comparing the first N-S-D confidence value for the first N-S-D wafer to a first N-S-D confidence limit; and

either continuing to process the other sets of N-S-D wafers when the first N-S-D confidence limit is met, or applying a first N-S-D corrective action when the first N-S-D confidence limit is not met.

6. The method of claim 5, wherein the applying a first N-S-D corrective action comprises:

establishing N-S-D confidence values for one or more additional wafers in the other sets of N-S-D wafers using the other N-S-D subsystem processing data;

comparing the N-S-D confidence values for one or more of the additional wafers in the other sets of N-S-D wafers to additional first N-S-D confidence limits; and

either continuing to process the other sets of N-S-D wafers, when one or more of the additional first N-S-D confidence limits are met, or stopping the establishing and the comparing, when one or more of the additional first N-S-D confidence limits are not met.

7. The method of claim 2, further comprising:

collecting first N-S-D subsystem processing data before, during, and/or after the first N-S-D processing sequences are performed using the first set of N-S-D wafers;

establishing first N-S-D confidence data for one or more wafers in the first set of N-S-D wafers using the wafer data and/or the first subsystem N-S-D processing data;

establishing additional sets of N-S-D wafers using the first N-S-D confidence data, the S-D confidence data, or the N-S-D confidence data, or any combination thereof; and

transferring the additional sets of N-S-D wafers to one or more additional N-S-D processing elements in additional subsystems, with additional N-S-D processing sequences being used to determine the one or more additional N-S-D processing elements.

8. The method of claim 7, wherein the establishing first N-S-D confidence data comprises:

establishing a first N-S-D confidence value for a first N-S-D wafer in the first set of N-S-D wafers using the first N-S-D subsystem processing data;

comparing the first N-S-D confidence value for the first N-S-D wafer to a first N-S-D confidence limit; and

either continuing to process the first set of N-S-D wafers when the first N-S-D confidence limit is met, or applying a first N-S-D corrective action when the first N-S-D confidence limit is not met.

9. The method of claim 8, wherein the applying a first N-S-D corrective action comprises:

establishing N-S-D confidence values for one or more additional wafers in the first set of N-S-D wafers using the first N-S-D subsystem processing data;

comparing the N-S-D confidence values for one or more of the additional wafers to additional first N-S-D confidence limits; and

either continuing to process the first set of N-S-D wafers, when one or more of the additional first N-S-D confidence limits are met, or stopping the establishing and the comparing, when one or more of the additional first N-S-D confidence limits are not met.

10. The method of claim 1, further comprising:

establishing other sets of S-D wafers using the S-D confidence data and/or N-S-D confidence data;

determining other S-D processing sequences for the other sets of S-D wafers, the other sets of S-D wafers being processed in other S-D subsystems using the other S-D processing sequences, wherein wafer state data is used to establish the other S-D processing sequences; and

transferring the other sets of S-D wafers to one or more other S-D processing elements in the other S-D subsystems, the other S-D processing sequences being used to determine the one or more other S-D processing elements.

11. The method of claim 10, further comprising:

collecting other S-D subsystem processing data before, during, and/or after the other S-D processing sequences are performed using the other sets of S-D wafers;

establishing other S-D confidence data for one or more wafers in the other sets of S-D wafers using the wafer data and/or the other S-D subsystem processing data;

establishing additional sets of S-D wafers using the other S-D confidence data, the S-D confidence data, or the N-S-D confidence data, or any combination thereof; and

transferring the additional sets of S-D wafers to one or more additional S-D processing elements in additional subsystems, with additional S-D processing sequences being used to determine the one or more additional S-D processing elements.

12. The method of claim 11, wherein the establishing other S-D confidence data comprises:

establishing a first S-D confidence value for a first S-D wafer in the other sets of S-D wafers using the other S-D subsystem processing data;

comparing the first S-D confidence value for the first S-D wafer to a first S-D confidence limit; and

either continuing to process the other sets of S-D wafers when the first S-D confidence limit is met, or applying a first S-D corrective action when the first S-D confidence limit is not met.

13. The method of claim 12, wherein the applying a first S-D corrective action comprises:

establishing S-D confidence values for one or more additional wafers in the other sets of S-D wafers using the other S-D subsystem processing data;

comparing the S-D confidence values for one or more of the additional wafers in the other sets of S-D wafers to additional first S-D confidence limits; and

either continuing to process the other sets of S-D wafers, when one or more of the additional first S-D confidence limits are met, or stopping the establishing and the comparing, when one or more of the additional first S-D confidence limits are not met.

14. The method of claim 1, wherein the establishing first S-D confidence data comprises:

establishing a first S-D confidence value for a first S-D wafer in the first set of S-D wafers using the first S-D subsystem processing data;

comparing the first S-D confidence value for the first S-D wafer to a first S-D confidence limit; and

either continuing to process the first set of S-D wafers when the first S-D confidence limit is met, or applying a first S-D corrective action when the first S-D confidence limit is not met.

15. The method of claim 14, wherein the applying a first S-D corrective action comprises:

establishing S-D confidence values for one or more additional wafers in the first set of S-D wafers using the first S-D subsystem processing data;

comparing the S-D confidence values for one or more of the additional wafers to additional first S-D confidence limits; and

either continuing to process the first set of S-D wafers, when one or more of the additional first S-D confidence limits are met, or stopping the establishing and the comparing, when one or more of the additional first S-D confidence limits are not met.

16. The method of claim 1, wherein the first S-D processing sequences include at least one of one or more coating procedures, one or more etching procedures, one or more thermal procedures, one or more exposure procedures, one or more oxidation procedures, one or more nitridation procedures, one or more development procedures, one or more lithography procedures, one or more scanner-related procedures, one or more measurement procedures, one or more inspection procedures, one or more evaluation procedures, one or more simulation procedures, one or more prediction procedures, one or more rework procedures, one or more storage procedures, one or more transfer procedures, one or more loadlock procedures, or one or more cleaning procedures, or any combination thereof.

17. The method of claim 1, wherein the first S-D subsystems include at least one of one or more coating subsystems, one or more etching subsystems, one or more thermal subsystems, one or more exposure subsystems, one or more oxidation subsystems, one or more nitridation subsystems, one or more development subsystems, one or more lithography subsystems, one or more scanner-related subsystems, one or more measurement subsystems, one or more inspection subsystems, one or more evaluation subsystems, one or more simulation subsystems, one or more prediction subsystems, one or more rework subsystems, one or more storage subsystems, one or more transfer subsystems, one or more loadlock subsystems, or one or more cleaning subsystems, or any combination thereof.

18. The method of claim 1, wherein the first S-D processing elements include at least one of one or more coating processing elements, one or more etching processing elements, one or more thermal processing elements, one or more exposure processing elements, one or more oxidation processing elements, one or more nitridation processing elements, one or more development processing elements, one or more lithography processing elements, one or more scanner-related processing elements, one or more measurement processing elements, one or more inspection processing elements, one or more evaluation processing elements, one or more simulation processing elements, one or more prediction processing elements, one or more rework processing elements, one or more storage processing elements, one or more transfer processing elements, one or more loadlock processing elements, or one or more cleaning processing elements, or any combination thereof.

19. The method of claim 1, wherein the plurality of wafers comprise at least on of semiconductor material, carbon material, dielectric material, glass material, ceramic material, metallic material, oxidized material, mask material, or planarization material, or a combination thereof.

20. A method of processing a plurality of wafers comprising:

receiving the plurality of wafers by a non-site dependent transfer subsystem in a processing system, the processing system including Site-Dependent (S-D) and Non-S-D (N-S-D) subsystems, each wafer having wafer data associated therewith, wherein the wafer data includes S-D confidence data and/or N-S-D confidence data, wherein at least one wafer has one or more evaluation structures thereon;

establishing a first set of S-D measurement wafers by using the using the S-D confidence data and/or N-S-D confidence data, each wafer in the first set of S-D measurement wafers having one or more evaluation structures thereon, wherein the first set of S-D measurement wafers are transferred from a N-S-D transfer subsystem to a S-D transfer subsystem;

determining first S-D measurement procedures for the first set of S-D measurement wafers, the first set of S-D measurement wafers being measured in first S-D measurement subsystems using the first S-D measurement procedures, wherein the wafer data is used to establish the first S-D measurement procedures;

transferring the first set of S-D measurement wafers to one or more first S-D measurement-related elements in the first S-D subsystems using the S-D transfer subsystem, a first S-D transfer sequence, a first S-D processing sequence, or the first S-D measurement procedures, or any combination thereof being used to determine the one or more first S-D measurement-related elements; and

performing the first S-D measurement procedures.

21. The method of claim 20, wherein the performing the first S-D measurement procedures comprises:

selecting a first measurement wafer from the first set of S-D measurement wafers, the first measurement wafer having a first S-D evaluation feature thereon;

obtaining first measurement data including first S-D measured signal data from the first S-D feature;

selecting first S-D best estimate signal data and an associated first S-D best estimate structure from a library of S-D measurement signals and associated structures;

calculating first S-D differences between the first S-D measured signal data and the first S-D best estimate signal data;

establishing first S-D confidence data for the first measurement wafer using the first S-D differences;

comparing the first S-D confidence data to first S-D product requirements; and

either identifying the first measurement wafer as a first high confidence wafer and continuing the processing when one or more of the first S-D product requirements are met, or applying a first corrective action when one or more of the first S-D product requirements are not met.

22. The method of claim 21, further comprising:

identifying the first S-D evaluation feature using the first S-D best estimate structure and the associated first S-D best estimate signal data when one or more of the first S-D product requirements are met.

23. The method of claim 21, wherein the applying a first corrective action comprises:

selecting new S-D best estimate signal data and an associated new S-D best estimate structure from a library of S-D diffraction signals and associated structures;

calculating new S-D differences between the first S-D measured signal data and the new S-D best estimate signal data;

establishing new S-D confidence data for the first measurement wafer using the new S-D differences;

comparing the new S-D confidence data to new S-D product requirements; and

either identifying the first measurement wafer as a new high confidence wafer and continuing the processing when one or more of the new S-D product requirements are met, or stopping the selecting, the calculating, the establishing, the comparing, and the identifying when one or more of the new S-D product requirements are not met.

24. The method of claim 23, further comprising:

identifying the first S-D evaluation feature using the new S-D best estimate structure and the associated new S-D best estimate signal data when first S-D profile library creation criteria is met.

25. The method of claim 21, wherein the applying a first corrective action comprises:

selecting a second measurement wafer from the first set of S-D measurement wafers, the second measurement wafer having the first S-D evaluation feature thereon;

obtaining second measurement data including second S-D measured signal data from the first S-D feature;

selecting second S-D best estimate signal data and an associated second S-D best estimate structure from the library of S-D measurement data and associated structures or a library of S-D diffraction signals and associated structures;

calculating second S-D differences between the second S-D measured signal data and the second S-D best estimate signal data;

establishing second S-D confidence data for the second measurement wafer using the second S-D differences;

comparing the second S-D confidence data to second S-D product requirements; and

either identifying the second measurement wafer as a second high confidence wafer and continuing the processing when one or more of the second S-D product requirements are met, or applying a second corrective action when one or more of the second S-D product requirements are not met.

26. The method of claim 25, further comprising:

identifying the first S-D evaluation feature using the second S-D best estimate structure and the associated second S-D best estimate signal data when one or more of the second S-D product requirements are met.

27. The method of claim 25, wherein the applying a second corrective action comprises:

selecting new second S-D best estimate signal data and an associated new second S-D best estimate structure from the library of S-D measurement data and associated structures or the library of S-D diffraction signals and associated structures;

calculating new second S-D differences between the second S-D measured signal data and the new second S-D best estimate signal data;

establishing new second S-D confidence data for the second measurement wafer using the new second S-D differences;

comparing the new second S-D confidence data to new second S-D product requirements; and

either identifying the second measurement wafer as a new second high confidence wafer and continuing the processing when one or more of the new second S-D product requirements are met, or stopping the selecting, the calculating, the establishing, the comparing, and the identifying when one or more of the new second S-D product requirements are not met.

28. The method of claim 27, further comprising:

identifying the first S-D evaluation feature using the new second S-D best estimate structure and the associated new second S-D best estimate signal data when one or more of the new second S-D product requirements are met.

29. The method of claim 27, wherein the applying a second corrective action comprises re-measuring, re-inspecting, re-working, storing, cleaning, and/or stripping the first measurement wafer, the second measurement wafer, or the first set of S-D measurement wafers, or any combination thereof.

30. The method of claim 21, wherein the applying a first corrective action comprises:

selecting a second S-D evaluation feature on the first measurement wafer;

obtaining second measurement data including second S-D measured signal data from the second S-D feature;

selecting second S-D best estimate signal data and an associated second S-D best estimate structure from the library of S-D measurement data and associated structures;

calculating second S-D differences between the second S-D measured signal data and the second S-D best estimate signal data;

establishing second S-D confidence data for the first measurement wafer using the second S-D differences;

comparing the second S-D confidence data to second S-D product requirements; and

either identifying the first measurement wafer as a second high confidence wafer and continuing the processing when one or more of the second S-D product requirements are met, or applying a second corrective action when one or more of the second S-D product requirements are not met.

31. The method of claim 21, wherein the applying a first corrective action comprises:

selecting a second measurement wafer having a second S-D evaluation feature thereon;

obtaining second measurement data including second S-D measured signal data from the second S-D feature;

selecting second S-D best estimate signal data and an associated second S-D best estimate structure from the library of S-D measurement data and associated structures;

calculating second S-D differences between the second S-D measured signal data and the second S-D best estimate signal data;

establishing second S-D confidence data for the second measurement wafer using the second S-D differences;

comparing the second S-D confidence data to second S-D product requirements; and

either

identifying the second, measurement wafer as a second high confidence wafer and continuing the processing when one or more of the second S-D product requirements are met, or applying a second corrective action when one or more of the second S-D product requirements are not met.

32. The method of claim 21, wherein the applying a first corrective action comprises re-measuring, re-inspecting, re-working, storing, cleaning, and/or stripping the one or more of the first set of S-D measurement wafers.

33. The method of claim 21, wherein applying a first corrective action further comprises:

establishing a first S-D calculated evaluation structure and associated first S-D calculated signal data from a new profile space outside a profile space associated with the library of S-D measurement signals and associated structures or a library of S-D diffraction signals and associated structures;

determining first S-D calculated differences between the first measured signal data and the first S-D calculated signal data;

establishing first S-D calculated confidence data for the first measurement wafer using the first S-D calculated differences;

comparing the first S-D calculated confidence data to first S-D profile library creation criteria; and

either identifying the first measurement wafer as a first calculated high confidence wafer and continuing the processing when one or more of the first S-D profile library creation criteria are met, or applying a second corrective action when one or more of the first S-D profile library creation criteria are not met.

34. The method of claim 33, further comprising:

creating a new S-D calculated evaluation structure and associated new S-D calculated signal data by changing at least one of a height, a width, a thickness, a depth, a volume, an area, an angle, a dielectric property, a process recipe parameter, a processing time, a critical dimension, a spacing, a period, a position, or a line width, or a combination of two or more thereof;

determining new S-D calculated differences between the first measured signal data and the new S-D calculated signal data;

establishing new S-D calculated confidence data for the first measurement wafer using the new S-D calculated differences;

comparing the new S-D calculated confidence data to new S-D profile library creation criteria; and

either

identifying the first measurement wafer as a new calculated high confidence wafer and continuing the processing when one or more of the new S-D profile library creation criteria are met, or stopping the creating, the determining, the establishing, the comparing, and the identifying when one or more of the new S-D profile library creation criteria are not met.

35. The method of claim 33, further comprising:

storing the first S-D calculated evaluation structure and the associated first S-D calculated signal data in the library of S-D measurement signals and associated structures or the library of S-D diffraction signals when the first S-D profile library creation criteria are met.

36. The method of claim 33, further comprising:

identifying the first S-D evaluation feature using the S-D first calculated evaluation structure and the associated first calculated signal data when the first S-D profile library creation criteria is met.

37. The method of claim 21, wherein applying a first corrective action further comprises:

determining a first outside data point in a first S-D profile data space outside a data space associated with a S-D profile library, wherein first outside S-D signal data, or first outside S-D profile data, or first outside S-D profile parameter data, or a combination thereof are associated with the first outside data point;

calculating first outside S-D differences between the first S-D measured signal data and the first outside S-D signal data;

establishing first outside S-D confidence data for the first measurement wafer using the first outside S-D differences;

comparing the first outside S-D confidence data to first outside S-D product requirements; and

either identifying the first measurement wafer as an outside high confidence wafer and continuing the processing when one or more of the first outside S-D product requirements are met, or applying a second corrective action when one or more of the first outside S-D product requirements are not met.

38. The method of claim 37, further comprising:

identifying the first S-D evaluation feature using the data associated with the first outside data point when one or more of the first outside S-D product requirements are met.

39. The method of claim 21, wherein the continuing the processing comprises:

comparing the first S-D differences to first accuracy requirements; and

either identifying a first set of inspection wafers as first high confidence wafers and continuing the processing when one or more of a first accuracy requirements are met, or applying additional corrective actions when one or more of the first accuracy requirements are not met.

40. The method of claim 20, wherein the applying a second corrective action comprises:

selecting a third S-D evaluation feature on the first measurement wafer;

obtaining third measurement data including third S-D measured signal data from the third S-D feature;

selecting third S-D best estimate signal data and an associated third S-D best estimate structure from a library of S-D measurement data and associated structures or a library of S-D diffraction signals and associated structures;

calculating third S-D differences between the third S-D measured signal data and the third S-D best estimate signal data;

establishing third S-D confidence data for the first measurement wafer using the third S-D differences;

comparing the third S-D confidence data to third S-D product requirements; and

either identifying the first measurement wafer as a third high confidence wafer and continuing the processing when one or more of the third S-D product requirements are met, or stopping the selecting, the calculating, the establishing, the comparing, and the identifying when one or more of the third S-D product requirements are not met.

41. The method of claim 22, wherein the applying a second corrective action comprises:

selecting new second S-D best estimate signal data and an associated new second S-D best estimate structure from the library of S-D measurement data and associated structures;

calculating new second S-D differences between the second measured signal data and the new second S-D best estimate signal data;

establishing new second S-D confidence data for the second measurement wafer using the new second S-D differences;

comparing the new second S-D confidence data to new second S-D product requirements; and

either identifying the second measurement wafer as a new second high confidence wafer and continuing the processing when one or more of the new second S-D product requirements are met, or stopping the selecting, the calculating, the comparing, and the identifying when one or more of the new second S-D product requirements are not met.