Organometallic compounds

• US 7,531,458 B2
• Filed: 09/29/2006
• Issued: 05/12/2009
• Est. Priority Date: 07/31/2006
• Status: Expired due to Fees

• Current Assignee: Rohm and Haas Electronic Materials LLC (DuPont de Nemours, Inc.)
• Original Assignee: Rohm and Haas Electronic Materials LLC (DuPont de Nemours, Inc.)
• Inventors: Wang, Qing Min, Shenai-Khatkhate, Deodatta Vinayak
• Primary Examiner(s): NAZARIO GONZALEZ, PORFIRIO
• Application Number:
  US11/540,072
• Publication Number:
  US 20080026578A1
• Time in Patent Office: 956 Days
• Field of Search: 556/18, 556/20, 556/1, 556/43, 556/52, 556/53, 438/680, 438/681, 427/248.1, 106/1.25, 118/715
• US Class Current: 438/681
• CPC Class Codes: C07F 1/08 Copper compounds
• CPC Class Codes: C07F 15/0046 Ruthenium compounds
• CPC Class Codes: C07F 15/0086 Platinum compounds
• CPC Class Codes: C07F 15/04 Nickel compounds
• CPC Class Codes: C07F 3/02 Magnesium compounds
• CPC Class Codes: C07F 5/00 Compounds containing elements of Groups 3 or 13 of the Periodic Table
• CPC Class Codes: C07F 7/00 Compounds containing elements of Groups 4 or 14 of the Periodic Table
• CPC Class Codes: C07F 9/00 Compounds containing elements of Groups 5 or 15 of the Periodic Table
• CPC Class Codes: C23C 16/18 from metallo-organic compounds

Abstract

Organometallic compounds containing an electron donating group-substituted alkenyl ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.

Claims

1. A method of depositing a film comprising the steps of:

providing a substrate in a reactor;

conveying a composition comprising an organometallic compound having the formula

(EDG-(CR¹R²)_y′

—

CR³═

CR⁴—

(CR⁵R⁶)_y″

)_nM^+mL¹_(m-n)L²_p, wherein each R¹ and R² is independently chosen from H, (C₁-C₆)alkyl and EDG;

R³═

H, (C₁-C₆)alkyl, EDG or EDG-(CR¹R²)_y′

;

R⁴═

H or (C₁-C₆)alkyl;

each R⁵ and R⁶ is independently chosen from H and (C₁-C₆)alkyl;

EDG is an electron donating group;

M=a metal;

L¹=an anionic ligand;

L² is a neutral ligand;

y′

=0-6;

y″

=0-6;

m=the valence of M;

n=1-7; and

p=0-3 and an organic solvent into the reactor using direct liquid injection; and

depositing a film comprising the metal on the substrate.

2. The method of claim 1, wherein L¹ is chosen from hydride, halide, azide, alkyls, alkenyl, alkynyl, carbonyl, dialkylaminoalkyl, imino, hydrazido, phosphido, nitrosyl, nitryl, nitrate, nitrile, alkoxy, dialkylaminoalkoxy, siloxy, diketonates, ketoiminates, cyclopentadienyls, silyls, pyrazolates, guanidinates, phosphoguanidinates, amidinates, phosphoamidinates, amino, alkylamino, dialkylamino and alkoxyalkyldialkylamino.

3. The method of claim 1 wherein EDG comprises one or more of oxygen, phosphorus, sulfur, nitrogen, alkenes, alkynes and aryl groups.

4. The method of claim 1 wherein M is chosen from a Group 2 to Group 16 metal.

5. A method of depositing a film comprising the steps of:

providing a substrate in a vapor deposition reactor;

conveying as a first precursor an organometallic compound of the formula

(EDG-(CR¹R²)_y′

—

CR³═

CR⁴—

(CR⁵R⁶)_y″

)_nM^+mL¹_(m-n)L²_p, wherein each R¹ and R² is independently chosen from H, (C₁-C₆)alkyl and EDG;

R³═

H, (C₁-C₆)alkyl, EDG or EDG-(CR¹R²)_y′

;

R⁴═

H or (C₁-C₆)alkyl;

each R⁵ and R⁶ is independently chosen from H and (C₁-C₆)alkyl;

EDG is an electron donating group;

M=a metal;

L¹=an anionic ligand;

L² is a neutral ligand;

y′

=0-6;

y″

=0-6;

m=the valence of M;

n=1-7; and

p=0-3 in a gaseous form to the reactor;

chemisorbing the first precursor compound on the surface of the substrate;

removing any non-chemisorbed first precursor compound from the reactor;

conveying a second precursor in a gaseous form to the reactor;

reacting the first and second precursors to form a film on the substrate; and

removing any unreacted second precursor.

6. The method of claim 5, wherein the second precursor is chosen from oxygen, ozone, water, peroxide, alcohols, nitrous oxide and ammonia.

7. The method of claim 5, wherein L¹ is chosen from hydride, halide, azide, alkyls, alkenyl, alkynyl, carbonyl, dialkylaminoalkyl, imino, hydrazido, phosphido, nitrosyl, nitryl, nitrate, nitrile, alkoxy, dialkylaminoalkoxy, siloxy, diketonates, ketoiminates, cyclopentadienyls, silyls, pyrazolates, guanidinates, phosphoguanidinates, amidinates, phosphoamidinates, amino, alkylamino, dialkylamino and alkoxyalkyldialkylamino.

8. The method of claim 5, wherein EDG comprises one or more of oxygen, phosphorus, sulfur, nitrogen, alkenes, alkynes and aryl groups.

9. The method of claim 5, wherein M is chosen from a Group 2 to Group 16 metal.