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Semiconductor device including a memory cell with a negative differential resistance (NDR) device

  • US 7,531,850 B2
  • Filed: 05/30/2006
  • Issued: 05/12/2009
  • Est. Priority Date: 06/26/2003
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • at least one memory cell comprising a negative differential resistance (NDR) device and a control gate coupled thereto;

    said NDR device comprising a superlattice including a plurality of stacked groups of layers with each group of layers of said superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.

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