Power semiconductor switching element
First Claim
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1. A semiconductor element comprising:
- a semiconductor substrate of a first conductivity type having a first major surface and a second major surface opposing the first major surface;
a drift layer of the first conductivity type formed on the first major surface of said semiconductor substrate;
a well layer of a second conductivity type selectively formed in a upper surface of said drift layer;
a source layer of the first conductivity type selectively formed in a upper surface of said well layer;
a trench formed to reach an inside of said semiconductor substrate from an upper surface of said source layer through said well layer and said drift layer;
a buried electrode formed in said trench through a first insulating film;
a control electrode formed on the uppermost surface of said drift layer, and the uppermost surface of said well layer through a second insulating film;
a first main electrode formed on the second major surface of said semiconductor substrate; and
a second main electrode connected to said source layer and said well layer, a part of the first insulating film being formed between an upper surface of the buried electrode and a bottom surface of the second main electrode and being directly contacted with the bottom surface of the second main electrode.
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Abstract
A semiconductor element of this invention includes a drift layer of a first conductivity type formed on a semiconductor substrate of the first conductivity type, a well layer of a second conductivity type selectively formed in the surface of the drift layer, a source layer of the first conductivity type selectively formed in the surface of the well layer, a trench formed to reach at least the inside of the drift layer from the surface of the source layer through the well layer, a buried electrode formed in the trench through a first insulating film, and a control electrode formed on the drift layer, the well layer, and the source layer through a second insulating film.
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Citations
8 Claims
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1. A semiconductor element comprising:
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a semiconductor substrate of a first conductivity type having a first major surface and a second major surface opposing the first major surface; a drift layer of the first conductivity type formed on the first major surface of said semiconductor substrate; a well layer of a second conductivity type selectively formed in a upper surface of said drift layer; a source layer of the first conductivity type selectively formed in a upper surface of said well layer; a trench formed to reach an inside of said semiconductor substrate from an upper surface of said source layer through said well layer and said drift layer; a buried electrode formed in said trench through a first insulating film; a control electrode formed on the uppermost surface of said drift layer, and the uppermost surface of said well layer through a second insulating film; a first main electrode formed on the second major surface of said semiconductor substrate; and a second main electrode connected to said source layer and said well layer, a part of the first insulating film being formed between an upper surface of the buried electrode and a bottom surface of the second main electrode and being directly contacted with the bottom surface of the second main electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification