Data input device that utilizes a layer of magnetic particles to store non-volatile input data that is magnetically coupled to an underlying MRAM array
First Claim
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1. An input device, comprising:
- a plurality of MRAM cells, each including a sense layer having a changeable magnetic orientation and a reference layer having a pinned magnetic orientation; and
a layer of particles including at least one particle spaced-apart from a sense layer of a first MRAM cell in said plurality of MRAM cells,wherein the at least one particle affects an orientation of a magnetic field of the sense layer of the first MRAM cell when a magnetic orientation of the at least one particle is changed.
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Abstract
An input device includes a plurality of MRAM cells and a layer of particles. An MRAM cell in the input device includes a sense layer having a magnetic orientation. At least one particle of the layer of particles is located near the MRAM cell such that the particle affects the magnetic orientation of the sense layer of the MRAM cell.
34 Citations
39 Claims
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1. An input device, comprising:
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a plurality of MRAM cells, each including a sense layer having a changeable magnetic orientation and a reference layer having a pinned magnetic orientation; and a layer of particles including at least one particle spaced-apart from a sense layer of a first MRAM cell in said plurality of MRAM cells, wherein the at least one particle affects an orientation of a magnetic field of the sense layer of the first MRAM cell when a magnetic orientation of the at least one particle is changed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A non-volatile input memory device, comprising;
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a layer of particles operable to non-volatility store input information; and a plurality of MRAM cells that are magnetically coupled to the layer of particles, but are electrically insulated from the layer of particles, wherein at least one cell of the plurality of MRAM cells reads the input information stored in at least a portion of the layer of particles. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21)
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22. A method of operating an input device having a layer of particles therein, each particle having a magnetic orientation, the layer of particles overlaying a plurality of MRAM cells having respective sense and reference layers therein, the method comprising:
- changing the magnetic orientation of at least one particle in the layer of particles;
providing a voltage to at least one of the plurality of MRAM cells wherein the at least one MRAM cell is substantially underlying the at least one particle; and
detecting a change in resistance of the at least one MRAM cell in response to said changing the magnetic orientation of the at least one particle in the layer of particles. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29)
- changing the magnetic orientation of at least one particle in the layer of particles;
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30. An apparatus having a layer of particles, each particle having a magnetic orientation, the layer of particles overlaying and spaced-apart from a plurality of MRAM cells so that the layer of particles and the plurality of MRAM cells are electrically isolated from each other, the apparatus comprising:
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means for changing the magnetic orientation of at least one particle in the layer of particles; means for providing a voltage to at least one of the MRAM cells; and means for detecting a change in resistance of the at least one of the MRAM cells located under the at least one particle, the change in resistance in response to the change of the magnetic orientation of the at least one particle. - View Dependent Claims (31, 32, 33)
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34. A non-volatile data input device, comprising:
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an array of MRAM cells having sense layers therein that are switchable between multiple magnetic field orientations and reference layers having pinned magnetic orientations; and a layer of magnetic particles suspended in a medium disposed on said array of MRAM cells, said layer having a sufficient density of magnetic particles therein to induce non-volatile magnetic coupling between a plurality of the magnetic particles and a corresponding plurality of the sense layers; and wherein the layer of magnetic particles are electrically insulated from the sense layers in said array of MRAM cells. - View Dependent Claims (35, 36, 37, 38, 39)
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Specification