Multicolor photodiode array and method of manufacturing

• US 7,535,033 B2
• Filed: 09/13/2005
• Issued: 05/19/2009
• Est. Priority Date: 09/14/2004
• Status: Active Grant

• Current Assignee: Banpil Photonics, Inc.
• Original Assignee: Banpil Photonics, Inc.
• Inventors: Dutta, Achyut Kumar
• Primary Examiner(s): Pert; Evan
• Assistant Examiner(s): SANDVIK, BENJAMIN P
• Application Number:
  US11/162,523
• Publication Number:
  US 20060081768A1
• Time in Patent Office: 1,344 Days
• Field of Search: None
• US Class Current: 257/184
• CPC Class Codes: H01L 2224/4847 the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
• CPC Class Codes: H01L 27/14634 Assemblies, i.e. Hybrid structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14645 Colour imagers
• CPC Class Codes: H01L 31/109 the potential barrier being of the PN heterojunction type

Abstract

Novel structures of the photodetector having broad spectral ranges detection capability are provided. The photodetector can offer high quantum efficiency >95% over wide spectral ranges, high frequency response >10 GHz (@3 dB). The photodiode array of N×N elements is also provided. The array can also offer wide spectral detection ranges ultraviolet to 2500 nm with high quantum efficiency >95% and high quantum efficiency of >10 GHz, cross-talk of <1%. In the array, each photodiode can be independently addressable and can be made either as top-illuminated or as bottom illuminated type detector. The photodiode and its array provided in this invention, could be used in multiple purpose applications such as telecommunication, imaging and sensing applications including surveillance, satellite tracking, advanced lidar systems, etc. The advantages of this photodetectors are that they are uncooled and performance will not be degraded under wide range of temperature variation.

Claims

1. An array device comprising:

a common n-type ohmic contact;

an n-type substrate etched out from the backside so as to avoid absorption of incident light from the backside into said substrate, and said substrate connected to the part of said n-type ohmic contact;

at least one n-type buffer layer attached to said n-type substrate;

at least one InGaAs absorption layer connected to said buffer layers, with an array of sections etched into said absorption layer so as to electrically isolate each said section;

a spacer layer attached to each said section of said absorption layer so as to protect said absorption layer from diffused dopants;

at least one doped p-type In-based ohmic contact layers covering each isolated section of the absorption layer, wherein said p-type In-based ohmic contact layers comprise InAs_0.6P_0.4 and/or highly-doped InP; and

a plurality of p-type ohmic contacts, one on each said section of the absorption layer, connected to said p-type In-based ohmic contact layer,

wherein each said p-type ohmic-contact to each section of said absorption layer forms an individual device and wherein the array device is illuminated from the backside of the substrate.

2. The array device of claim 1 wherein all n-type materials are replaced with p-type materials and all p-type materials are replaced with n-type materials.