Semiconductor device having a fuse and method of forming thereof
First Claim
Patent Images
1. A semiconductor device, comprising:
- a substrate having circuitry formed therein;
a passivation layer formed overlying at least a portion of the substrate;
a fuse, which may be selectively open-circuited, formed overlying the passivation layer; and
a packaging material formed in contact with an entire surface the fuse, wherein the packaging material is selected from the group consisting of a mold compound and an underfill.
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Accused Products
Abstract
A fuse (43) is formed overlying a passivation layer (35) and under a packaging material (55, 70). In one embodiment, a fuse (43) is blown before the packaging material (55, 70) is formed. In some embodiments, the fuse (43) may be formed of metal (47), a metal nitride (42) or a combination thereof.
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Citations
20 Claims
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1. A semiconductor device, comprising:
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a substrate having circuitry formed therein; a passivation layer formed overlying at least a portion of the substrate; a fuse, which may be selectively open-circuited, formed overlying the passivation layer; and a packaging material formed in contact with an entire surface the fuse, wherein the packaging material is selected from the group consisting of a mold compound and an underfill. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device, comprising:
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a substrate having a first circuit formed therein, a second circuit formed therein, and a fuse, wherein; the first circuit has a first contact area, the second circuit has a second contact area; and the fuse, which may be selectively open-circuited, is formed overlying the passivation layer, the fuse having a third contact area which is electrically coupled to the first contact area of the first circuit, and the fuse having a fourth contact area which is electrically coupled to the second contact area of the second circuit, wherein the first contact area of the first circuit and the second contact area of the second circuit are no longer electrically connected if the fuse is open-circuited; a first interconnect for electrically connecting the first contact area to a first portion of the fuse; and a second interconnect for electrically connecting the second contact area to a second portion of the fuse, a passivation layer formed overlying at least a portion of the substrate, wherein the fuse is formed overlying the passivation layer; and a packaging material formed in contact with an entire length of the fuse, wherein the packaging material is selected from the group consisting of a mold compound and an underfill. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A method for forming a semiconductor device having a fuse, comprising:
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providing a substrate; forming a passivation layer overlying at least a portion of the substrate; forming the fuse overlying the passivation layer; forming circuitry within the substrate, and forming a packaging material in contact with an entire surface the fuse, wherein the packaging material is selected from the group consisting of a mold compound and an underfill. - View Dependent Claims (19, 20)
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Specification