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Bi-directional transistor with by-pass path and method therefor

  • US 7,537,970 B2
  • Filed: 03/06/2006
  • Issued: 05/26/2009
  • Est. Priority Date: 03/06/2006
  • Status: Active Grant
First Claim
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1. A method of forming a bi-directional transistor comprising:

  • forming a first MOS transistor on a semiconductor substrate of a first conductivity type, the first MOS transistor having a first current carrying electrode and a second current carrying electrode;

    forming a body region of the first MOS transistor on a surface of the semiconductor substrate and isolated from a first current carrying electrode region of the first MOS transistor by a first P-N junction and isolated from a second current carrying electrode region of the first MOS transistor by a second P-N junction;

    forming a second MOS transistor configured to selectively couple the body region of the first MOS transistor to the first current carrying electrode of the first MOS transistor; and

    forming a third MOS transistor on a surface of the semiconductor substrate and coupled to form a current flow path in parallel with the first MOS transistor.

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