Semiconductor light emitting device
First Claim
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1. A semiconductor light emitting device comprising:
- a cavity including a mesa formed over a substrate, the mesa having an active layer and being isolated by a recess farmed around the mesa;
a resin layer with which the recess is filled; and
a metal film formed over a light output surface of the cavity and having an opening formed therein,wherein light emitted from the active layer is output through the light output surface, and the opening has a diameter smaller than an emission wavelength of the emitted light,two or more said openings are formed and arranged in a lattice, andrelation in P =λ
×
(i2+j2)0.5/(∈
1∈
2/(∈
1+∈
2))0.5 is satisfied where P is an opening period of the openings, ∈
1 is a dielectric constant of the metal film, ∈
2 is a dielectric constant of a material of a layer that is in contact with the metal film, and i and j are integers that are not negative.
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Abstract
A semiconductor light emitting device includes: a cavity including a mesa formed over a substrate, the mesa having an active layer and being isolated by a recess formed around the mesa; and a resin layer with which the recess is filled. On the upper surface of the cavity, which is a light output surface through which light emitted from the active layer is output, a metal film having an opening whose diameter is smaller than the emission wavelength of the emitted light is formed.
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Citations
36 Claims
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1. A semiconductor light emitting device comprising:
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a cavity including a mesa formed over a substrate, the mesa having an active layer and being isolated by a recess farmed around the mesa; a resin layer with which the recess is filled; and a metal film formed over a light output surface of the cavity and having an opening formed therein, wherein light emitted from the active layer is output through the light output surface, and the opening has a diameter smaller than an emission wavelength of the emitted light, two or more said openings are formed and arranged in a lattice, and relation in P =λ
×
(i2+j2)0.5/(∈
1∈
2/(∈
1+∈
2))0.5 is satisfied where P is an opening period of the openings, ∈
1 is a dielectric constant of the metal film, ∈
2 is a dielectric constant of a material of a layer that is in contact with the metal film, and i and j are integers that are not negative. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36)
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Specification