Inorganic electroluminescent device and method of fabricating the same

• US 7,538,483 B2
• Filed: 08/07/2003
• Issued: 05/26/2009
• Est. Priority Date: 08/07/2002
• Status: Active Grant

• Current Assignee: Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Inventors: Mikami, Akiyoshi
• Primary Examiner(s): Tarazano; D. Lawrence
• Assistant Examiner(s): Thompson; Camie S
• Application Number:
  US10/635,777
• Publication Number:
  US 20040032203A1
• Time in Patent Office: 2,119 Days
• Field of Search: 428/690, 428/917, 313/502, 313/503, 313/504, 313/509, 252/301.45, 257/102
• US Class Current: 313/502
• CPC Class Codes: C09K 11/7731 with alkaline earth metals
• CPC Class Codes: H05B 33/14 characterised by the chemical or physical composition or the arrangement of the electroluminescent material , or by the simultaneous addition of the electroluminescent material in or onto the light source
• CPC Class Codes: H05B 33/22 characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
• CPC Class Codes: H05B 33/26 characterised by the composition or arrangement of the conductive material used as an electrode
• CPC Class Codes: H05B 33/28 of translucent electrodes
• CPC Class Codes: Y10S 428/917 Electroluminescent

Abstract

A transparent electrode composed of ITO(indium-tin oxide), an insulating layer composed of ZrSiN, an underlayer composed of MgS with a thickness of 100 to 300 nm, a light emitting layer composed of Mg_1-xCa_xS, and an insulating layer composed of ZrSiN are formed in this order on a glass substrate. Electrodes composed of Al are formed on the insulating layer. The underlayer is formed by sputtering with the substrate temperature set to room temperature. The light emitting layer is formed by sputtering with the substrate temperature set to not lower than 100° C.

Claims

1. An inorganic electroluminescent device comprising in the following order:

an underlayer formed of a first compound semiconductor of Group IIa-VIb, wherein said first compound semiconductor contains MgS; and

a light emitting layer formed of a second compound semiconductor of Group IIa-VIb,

wherein said first compound semiconductor and said second compound semiconductor have an orientation in the <

100>

direction, wherein said second compound semiconductor contains Mg_1-xCa_xS, wherein x is 0.1≦

x≦

0.15, and Eu is doped into Mg<sub>1−

x</sub>Ca_xS as a substance acting as a luminescent center, and the composition ratio of Eu to Mg is not larger than 0.1.

2. The inorganic electroluminescent device according to claim 1, wherein the composition ratio of Eu to Mg is not larger than 0.01.