Method of programming flash memory device
First Claim
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1. A method of programming a flash memory device, comprising:
- performing program and program verification on a selected memory cell; and
if the programmed cell is a cell connected to a last word line, performing a re-program.
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Abstract
At the time of a program of a NAND flash memory device, a re-program is performed on a cell connected to the last word line after program and program verification are completed. Thus, threshold voltage distributions of the cell connected to the last word line can be controlled to have a narrow width in the same manner as that of other cells. It is therefore possible to secure the read margin of a chip and to improve the yield. Accordingly, the durability and reliability of devices can be improved by threshold voltage distributions controlled to have a narrow width as described above.
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15 Claims
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1. A method of programming a flash memory device, comprising:
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performing program and program verification on a selected memory cell; and if the programmed cell is a cell connected to a last word line, performing a re-program. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of programming a flash memory device, comprising:
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performing a program by applying a program voltage through a word line of a selected cell; verifying a program status of the cell on which the program has been performed; repeatedly performing the program while increasing the program voltage of a cell that has not been programmed as a result of the verification; and if the programmed cell is connected to a last word line as a result of the verification, performing a re-program by applying a re-program voltage through the last word line and a voltage through a bit line.
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Specification