Process condition measuring device with shielding

• US 7,540,188 B2
• Filed: 05/01/2006
• Issued: 06/02/2009
• Est. Priority Date: 05/01/2006
• Status: Active Grant

• Current Assignee: SensArray Corp. (KLA Corporation)
• Original Assignee: SensArray Corp. (KLA Corporation)
• Inventors: Jensen, Earl M., Wiese, Lynn Karl
• Primary Examiner(s): Raevis; Robert R
• Application Number:
  US11/380,985
• Publication Number:
  US 20070251338A1
• Time in Patent Office: 1,128 Days
• Field of Search: None
• US Class Current: 73/431
• CPC Class Codes: H01L 22/22 Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement testing and repair of stores after manufacture including at wafer scale G11C29/00; fuses per se H01L23/525
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding

Abstract

A process condition measuring device has electronic components sandwiched between two conductive substrate portions. The conductive substrate portions are joined by an electrically conductive pathway. Native oxide is removed from substrate portions and electrically conductive contact pads are formed that are then joined together with electrically conductive adhesive to form the electrically conductive pathway.

Claims

1. A process condition measuring device for measuring a process condition in a processing system that processes workpieces of standard dimensions, comprising:

a first conductive substrate portion;

a second conductive substrate portion;

an electrical circuit interposed between the first conductive substrate portion and the second conductive substrate portion; and

the first and second conductive substrate portions electrically connected together to form an electrically continuous body that has at least one dimension that is equal to a dimension of a workpiece processed by the processing system.

2. The process condition measuring device of claim 1 wherein the first conductive substrate portion and second conductive substrate portion are formed of doped silicon.

3. The process condition measuring device of claim 2 wherein the workpieces of standard dimensions processed by the processing system are silicon wafers and the electrically continuous body has the same diameter as the workpieces.

4. The process condition measuring device of claim 1 wherein the electrical circuit includes a plurality of sensors connected to a processing circuit.

5. The process condition measuring device of claim 1 wherein the electrical circuit includes a processing circuit, the processing circuit connected to a plurality of sensors that are not between the first conductive portion and the second conductive portion.

6. The process condition measuring device of claim 1 wherein the first and second conductive substrate portions are connected together at at least one predetermined location, the first conductive substrate portion having a first conductive pad in direct contact with the first conductive substrate portion at the at least one predetermined location.

7. A method of forming a process condition measuring device for measuring a process condition in a processing system that processes workpieces of standard dimensions, the process condition measuring device having protection against electromagnetic fields, the method comprising:

forming a first substrate portion of a conductive material;

forming a first contact pad on the first substrate portion, the first contact pad in direct electrical contact with the first substrate portion;

forming a second substrate portion of the conductive material;

forming a second contact pad on the second substrate portion , the second contact pad in direct electrical contact with the second substrate portion;

placing an electronic circuit between the first substrate portion and the second substrate portion; and

connecting the first substrate portion and the second substrate portion together, with the electronic circuit between them, such that the first contact pad is electrically connected to the second contact pad, wherein the first and second conductive substrate portions together form an electrically continuous body that has at least one dimension that is equal to a dimension of a workpiece processed by the processing system.

8. method of claim 7 wherein the conductive material is doped silicon.

9. The method of claim 8 wherein, prior to forming the first contact pad, Silicon dioxide is removed from the first conductive substrate and prior to forming the second contact pad, Silicon dioxide is removed from the second conductive substrate.

10. The method of claim 7 wherein the first substrate portion and the second substrate portion connected together, with the electronic circuit between them form an assembly that has at least one dimension that is the same as a dimension of a standard Silicon wafer.

11. The method of claim 10 wherein the assembly is a disk with a diameter of 150 millimeters, 200 millimeters or 300 millimeters.