Use of an organic matrix material for producing an organic semiconductor material, organic semiconductor material and electronic component
First Claim
1. Organic semiconductor material containing a hole transport layer of an organic matrix material doped with an organic dopant by coevaporation characterized in that the organic matrix material comprises at least partly one or more spiro-bifluorene compounds of the formula (I)
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Abstract
The present invention relates to use of an organic matrix material for producing an organic semiconductor material, characterized in that the organic matrix material is comprised at least partly of a spirobifluorene compound, and the glass transition temperature of the organic matrix material is at least 120° C. and the highest occupied molecular orbital (HOMO) of the matrix material is at a maximum energy level of 5.4 eV; and also to an organic semiconductor material and electronic component.
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Citations
9 Claims
- 1. Organic semiconductor material containing a hole transport layer of an organic matrix material doped with an organic dopant by coevaporation characterized in that the organic matrix material comprises at least partly one or more spiro-bifluorene compounds of the formula (I)
- 4. Electronic component having an organic semiconductor material containing a hole transport layer of an organic matrix material doped with an organic dopant by coevaporation, characterized in that the organic matrix material is comprised at least partly of a spiro-bifluorene compound of the formula (I)
- 6. Method for preparing an organic semiconductor or material comprising a hole transport layer, the method comprising producing the hole transport layer by co-evaporating and applying by vapor deposition a dopant and an organic matrix material, wherein the organic matrix material is comprised at least partly of a spiro-bifluorene compound of the formula (I)
Specification