Nitride-based semiconductor light-emitting device and method of manufacturing the same
First Claim
1. A method of manufacturing a nitride-based semiconductor light-emitting device, comprising:
- sequentially forming an n-clad layer, an active layer, and a p-clad layer on a substrate;
forming a plurality of masking dots on an upper surface of the p-clad layer;
forming a p-contact layer having a rough surface on portions of the p-clad layer between the masking dots;
forming a rough n-contact surface of the n-clad layer having the same rough shape as the rough shape of the p-contact layer by dry-etching from a portion of the upper surface of the p-contact layer to a desired depth of the n-clad layer;
forming an n-electrode on the rough n-contact surface; and
forming a p-electrode on the p-contact layer.
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Abstract
A nitride-based semiconductor light-emitting device having an improved structure to enhance light extraction efficiency, and a method of manufacturing the same are provided. The method includes the operations of sequentially forming an n-clad layer, an active layer, and a p-clad layer on a substrate; forming a plurality of masking dots on an upper surface of the p-clad layer; forming a p-contact layer having a rough surface on portions of the p-clad layer between the masking dots; forming a rough n-contact surface of the n-clad layer having the same rough shape as the rough shape of the p-contact layer by dry-etching from a portion of the upper surface of the p-contact layer to a desired depth of the n-clad layer; forming an n-electrode on the rough n-contact surface; and forming a p-electrode on the p-contact layer.
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Citations
15 Claims
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1. A method of manufacturing a nitride-based semiconductor light-emitting device, comprising:
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sequentially forming an n-clad layer, an active layer, and a p-clad layer on a substrate; forming a plurality of masking dots on an upper surface of the p-clad layer; forming a p-contact layer having a rough surface on portions of the p-clad layer between the masking dots; forming a rough n-contact surface of the n-clad layer having the same rough shape as the rough shape of the p-contact layer by dry-etching from a portion of the upper surface of the p-contact layer to a desired depth of the n-clad layer; forming an n-electrode on the rough n-contact surface; and forming a p-electrode on the p-contact layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A nitride-based semiconductor light-emitting device comprising
a n-clad layer having a stepped portion formed by etching a predetermined portion of the upper surface of the n-clad layer, wherein the stepped portion has a rough n-contact upper surface; -
an active layer formed on the upper surface of the n-clad layer; a p-clad layer formed on the active layer; a plurality of masking dots formed on the upper surface of the p-clad layer; a p-contact layer formed on portions of the p-clad layer between the masking dots not to be located on the masking dots, whereby the p-contact layer has a rough structure; a n-electrode formed on the rough n-contact surface; and a p-electrode formed on the p-contact layer. - View Dependent Claims (12, 13, 14, 15)
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Specification