Method of depositing Ru films having high density
First Claim
1. A method of depositing a ruthenium film, the method comprising:
- loading a substrate into a reactor;
depositing a first ruthenium layer over the substrate by a plasma enhanced atomic layer deposition (PEALD) process; and
depositing a second ruthenium layer over the first ruthenium layer by an atomic layer deposition (ALD) process without using plasma.
2 Assignments
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Accused Products
Abstract
A ruthenium film deposition method is disclosed. In one embodiment of the method, a first ruthenium film is deposited by using a PEALD process until a substrate is substantially entirely covered with the first ruthenium film. Then, a second ruthenium film is deposited on the first ruthenium film by using a thermal ALD process having a higher deposition speed than that of the PEALD process. In the method, a ruthenium metal film having a high density is formed in a short time by combining a PEALD process of depositing a ruthenium film at a low deposition speed and a deposition process of depositing a ruthenium film at a higher deposition speed. Accordingly, it is possible to form a ruthenium film having high density, a smooth surface, good adhesiveness, and a short incubation period. Therefore, according to the embodiment, in comparison to cases of using only a PEALD process or an ALD process that has a long incubation period, it is possible to obtain a ruthenium film having a large thickness and a high density in the same time interval. As a result, the ruthenium film formed by the ruthenium film deposition method according to the embodiment is more suitable for electrode structures of semiconductor devices than the ruthenium films formed by using conventional methods.
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Citations
32 Claims
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1. A method of depositing a ruthenium film, the method comprising:
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loading a substrate into a reactor; depositing a first ruthenium layer over the substrate by a plasma enhanced atomic layer deposition (PEALD) process; and depositing a second ruthenium layer over the first ruthenium layer by an atomic layer deposition (ALD) process without using plasma. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A semiconductor device, comprising:
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a substrate; and a ruthenium film formed over the substrate, the film comprising; a first ruthenium layer formed over the substrate; and a second ruthenium layer formed on the first ruthenium layer, wherein each of the first and second ruthenium layers has a density of about 10 g/cm3 to about 13 g/cm3. - View Dependent Claims (27)
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25. A ruthenium bilayer structure comprising:
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a first ruthenium layer formed over a substrate; and a second ruthenium layer formed directly on the first ruthenium layer, wherein each of the first and second ruthenium layers has a density of about 10 g/cm3 to about 13 g/cm3.
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26. A method of depositing a ruthenium film, the method comprising:
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providing a substrate into a reactor; depositing a first ruthenium layer over the substrate at a first deposition rate by a plasma enhanced atomic layer deposition (PEALD) process; and depositing a second ruthenium layer over the first ruthenium layer at a second deposition rate by an atomic layer deposition (ALD) process, the second deposition rate being greater than the first deposition rate. - View Dependent Claims (28, 29)
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30. A method of depositing a ruthenium film, the method comprising:
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providing a substrate into a reactor; depositing a first ruthenium layer over the substrate by a plasma enhanced atomic layer deposition (PEALD) process; and depositing a second ruthenium layer over the first ruthenium layer by a non-plasma process, wherein the second ruthenium layer has substantially the same density as that of the first ruthenium layer, wherein each of the first and second ruthenium layers has a density of about 10 g/cm3 to about 13 g/cm3. - View Dependent Claims (31, 32)
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Specification