Gate structure in a trench region of a semiconductor device and method for manufacturing the same
First Claim
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1. A semiconductor device comprising:
- first and second drift regions in a semiconductor substrate;
a trench region between the first and second drift regions;
an oxide layer spacer on sidewalls of the trench region;
an insulating layer below the trench region;
a gate in the trench region;
a sidewall spacer on sidewalls of the gate, wherein the sidewall spacer comprises silicon nitride; and
a source in one of the first and second drift regions and a drain in the other of the first and second drift regions.
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Abstract
Disclosed are a gate structure in a trench region of a semiconductor device and method for manufacturing the same. The semiconductor device includes a pair of drift regions formed in a semiconductor substrate; a trench region formed between the pair of drift regions; an oxide layer spacer on sidewalls of the trench region; a gate formed in the trench region; and a source and a drain formed in the pair of the drift regions, respectively.
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Citations
15 Claims
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1. A semiconductor device comprising:
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first and second drift regions in a semiconductor substrate; a trench region between the first and second drift regions; an oxide layer spacer on sidewalls of the trench region; an insulating layer below the trench region; a gate in the trench region; a sidewall spacer on sidewalls of the gate, wherein the sidewall spacer comprises silicon nitride; and a source in one of the first and second drift regions and a drain in the other of the first and second drift regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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first and second drift regions in a semiconductor substrate; a trench region between the first and second drift regions; an oxide layer spacer on sidewalls of the trench region; an insulating layer below the trench region; an oxide layer adjacent to the trench region; a gate in the trench region and in part on an upper surface of the oxide layer; and a source in one of the first and second drift regions and a drain in the other of the first and second drift regions. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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Specification