Semiconductor integrated circuit
First Claim
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1. A semiconductor integrated circuit comprising:
- a substrate;
a first well of a first polarity to which a first potential is given;
a second well of the first polarity to which a second potential different from the first potential is given;
a third well of a second polarity different from the first polarity;
a fourth well of the second polarity, which is above the substrate; and
a circuit element on the third well, whereinthe first well is insulated from a power source or ground to which a source of a MOSFET formed on the first well is connected,the third well is disposed between the first and second wells in adjacent relation to the first and second wells, andthe first well, the second well and the third well are above the fourth well.
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Abstract
A semiconductor integrated circuit has a first substrate of a first polarity to which a first substrate potential is given, a second substrate of the first polarity to which a second substrate potential different from the first substrate potential is given, and a third substrate of a second polarity different from the first polarity. The first substrate is insulated from a power source or ground to which a source of a MOSFET formed on the substrate is connected. The third substrate is disposed between the first and second substrates in adjacent relation to the first and second substrates. A circuit element is formed on the third substrate.
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Citations
29 Claims
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1. A semiconductor integrated circuit comprising:
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a substrate; a first well of a first polarity to which a first potential is given; a second well of the first polarity to which a second potential different from the first potential is given; a third well of a second polarity different from the first polarity; a fourth well of the second polarity, which is above the substrate; and a circuit element on the third well, wherein the first well is insulated from a power source or ground to which a source of a MOSFET formed on the first well is connected, the third well is disposed between the first and second wells in adjacent relation to the first and second wells, and the first well, the second well and the third well are above the fourth well. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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Specification