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Method for correcting for asymmetry of threshold voltage shifts

  • US 7,541,829 B1
  • Filed: 06/02/2008
  • Issued: 06/02/2009
  • Est. Priority Date: 06/02/2008
  • Status: Expired due to Fees
First Claim
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1. A method for correcting asymmetric threshold voltage shifts caused by negative-bias temperature instability (NBTI) during burn-in in an integrated circuit, the integrated circuit comprising a first signal path and a second signal path, each of the signal paths comprising a plurality of devices, a first device of the first signal path having a larger initial threshold voltage shift than a second device of the second signal path, the method comprising:

  • scanning a first logic pattern into the first signal path, the first logic pattern causing bias conditions that induce recovery of the threshold voltage shift in the first device;

    scanning a second logic pattern into the second signal path, the second logic pattern causing bias conditions that induce threshold voltage shift in the second device; and

    operating the integrated circuit for a sufficient time to substantially equalize the threshold voltage shift of the first and second devices.

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