Creating recessed regions in a substrate and assemblies having such recessed regions

• US 7,542,301 B1
• Filed: 06/22/2005
• Issued: 06/02/2009
• Est. Priority Date: 06/22/2005
• Status: Expired due to Fees

• Current Assignee: RUIZHANG TECHNOLOGY LIMITED COMPANY
• Original Assignee: Alien Technology Corporation
• Inventors: Kanemoto, Eric, Craig, Gordon, Liong, Lily, Hadley, Mark A., Schatz, Kenneth D.
• Primary Examiner(s): Pert; Evan
• Assistant Examiner(s): AHMED, SELIM U
• Application Number:
  US11/159,574
• Time in Patent Office: 1,441 Days
• Field of Search: 257/679, 257/703, 257/732, 257/E23.064, 257/E23.065, 257/E23.125, 257/E23.176, 257/E23.177, 257/622, 361/737
• US Class Current: 361/761
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/20 Structure, shape, material or disposition of high density interconnect preforms
• CPC Class Codes: H01L 2224/24101 Connecting bonding areas at the same height
• CPC Class Codes: H01L 2224/24227 the HDI interconnect not connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the semiconductor or solid-state body being mounted in a cavity or on a protrusion of the item
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/76155 Jetting means, e.g. ink jet
• CPC Class Codes: H01L 2224/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
• CPC Class Codes: H01L 2224/82102 using jetting, e.g. ink jet
• CPC Class Codes: H01L 2224/95085 being a liquid, e.g. for fluidic self-assembly
• CPC Class Codes: H01L 2224/95122 by applying vibration
• CPC Class Codes: H01L 2224/95136 involving guiding structures, e.g. shape matching, spacers or supporting members
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/19 Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/95 at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/10158 : at the passive surface
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/15155 : the shape of the recess being other than a cuboid
• CPC Class Codes: H01L 2924/15157 : Top view
• CPC Class Codes: H01L 2924/15165 : Monolayer substrate
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H05K 1/185 : Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit semiconductor chips encapsulated by interconnect and support structures H01L23/5389, H01L24/00
• CPC Class Codes: H05K 2201/09036 : Recesses or grooves in insulating substrate recess in metallic substrate H05K2201/09745
• CPC Class Codes: H05K 2201/0949 : Pad close to a hole, not surrounding the hole if used for surface mounting H05K1/114
• CPC Class Codes: H05K 2201/09827 : Tapered, e.g. tapered hole, via or groove bevelled, chamferred or tapered edge H05K2201/09154
• CPC Class Codes: H05K 2201/10674 : Flip chip
• CPC Class Codes: H05K 2201/10727 : Leadless chip carrier [LCC], e.g. chip-modules for cards
• CPC Class Codes: H05K 2203/0108 : Male die used for patterning, punching or transferring
• CPC Class Codes: H05K 2203/0143 : Using a roller; Specific shape thereof; Providing locally adhesive portions thereon
• CPC Class Codes: H05K 2203/1545 : Continuous processing, i.e. involving rolls moving a band-like or solid carrier along a continuous production path
• CPC Class Codes: H05K 3/0014 : Shaping of the substrate, e.g. by moulding
• CPC Class Codes: H05K 3/321 : by conductive adhesives
• CPC Class Codes: H05K 3/368 : parallel to each other H05K3/361 takes precedence

Abstract

An embossing die, the die comprises one or more protruding features configured to create one or more corresponding recessed regions in a substrate; and a left side edge and a right side edge. Either the left side edge or the right side edge is a gradually sloping edge. The embossing die can be used to form an assembly. The assembly comprises a substrate including a more than one defined frames. Each of the defined frames comprises a plurality of recessed regions and a plurality of functional blocks, each functional block being deposited in one of the recessed regions. Each of the defined frames is separated from another frame by a region. The region can be a flattened region, a sloped region, or a plateau shaped region having a plateau top and two sloped sides, wherein each sloped side forms about 10-15 degree angle to a surface of the substrate.

Claims

1. An assembly comprising:

a substrate including more than one defined frames;

each of said defined frames comprising a plurality of recessed regions and a plurality of functional blocks, each of said functional blocks is deposited in one of said recessed regions;

each of said defined frames is separated from another frame by a region, said region being one of a sloped region, and a plateau shaped region having a plateau top and two sloped sides, each sloped side being about 10-15 degrees to a surface of said substrate.

2. The assembly of claim 1 wherein

said recessed regions have a first width-depth aspect ratio;

said functional block have a second width-depth aspect ratio;

said first width-depth aspect ratio substantially matches said second width-depth aspect ratio, wherein said first width-depth aspect ratio is one of equal to or less than 10.5;

1.

3. The assembly of claim 1 wherein each recessed region has a first depth and each said functional blocks has a total thickness, said first depth of each recessed region is any one of at least 1 μ

m greater and at most 10 μ

m greater than said total thickness of each functional block or at least 0 μ

m greater and at most 10 μ

m greater than said total thickness of said functional block.

4. The assembly of claim 1 wherein each recessed region has a first width and each functional block has a total width, said first width of each recessed region is any one of at least 1 μ

m greater and at most 10 μ

m greater than said total width of each functional block or at least 0 μ

m greater and at most 10 μ

m greater than said total thickness of said functional block.

5. The assembly of claim 1 wherein said region is substantially uniform from one frame to a next frame of the substrate.

6. The assembly of claim 1 wherein said region has a maximum vertical height less than 100 μ

m.

7. The assembly of claim 1 wherein said recessed region has a bottom side, top sides, and sidewalls, each of said a bottom side, top sides, and sidewalls being substantially flat with no protrusion.

8. The assembly of claim 7 wherein substantially flat with no protrusion is characterized by each of bottom side, top sides, and sidewalls having no protrusion greater than 5 μ

m.

9. The assembly of claim 1 wherein said substrate has a glass transition temperature between about 125-150°

C.

10. The assembly of claim 1 wherein said substrate is characterized by having a receptor positional distortion of about 30-300 μ

m across a substrate area of about 200 mm when said substrate is subjected to a first thermal excursion for 30 minutes at 125°

C.

11. The assembly of claim 1 wherein said substrate is characterized by having a receptor positional distortion of about 30-500 μ

m across a substrate area of about 200 mm when said substrate is subjected to a first thermal excursion for 30 minutes at 150°

C.

12. The assembly of claim 1 wherein each of said functional blocks includes at least one contact pad formed on a top surface of said functional block, said assembly further comprising:

a dielectric layer formed over each of said functional blocks;

a via formed in said dielectric layer, said via exposing said contact pad, and said via having a diameter that is smaller than said contact pad.

13. The assembly of claim 12 wherein said via has a cone-like shape wherein said via has a bottom diameter and a top diameter, said bottom diameter is smaller than said top diameter, and said bottom diameter is at least 20% smaller than said contact pad.

14. The assembly of claim 12 wherein said via has a non-symmetrical cone-like shape with a flatter slope on one side of said via.

15. The assembly of claim 12 wherein a conductive interconnect fills said via and covers all of exposed area of said contact pad.

16. The assembly of claim 12 wherein said conductive interconnect has a conductor diameter that is about 2-3 times larger than said top diameter of said via.