×

Single crystal shape memory alloy devices and methods

  • US 7,544,257 B2
  • Filed: 05/04/2005
  • Issued: 06/09/2009
  • Est. Priority Date: 05/06/2004
  • Status: Active Grant
First Claim
Patent Images

1. A method of fabricating an anisotropic, single crystal shape memory alloy having hyperelastic properties for use as a guidewire, the anisotropic single crystal shape memory alloy material formed being deformable at a constant force at recoverable strain of at least 9% with a very narrow loading-unloading hysteresis, a recovery which is completely repeatable and complete and a very low yield strength when martensitic, the method comprising the steps of:

  • lowering a seed of a copper aluminum based alloy into a molten melt of a copper aluminum based alloy, wherein the seed is aligned on the <

    100>

    crystallographic direction in a direction of pulling,pulling a column of the alloy of a length greater than 42 inches from the melt by pulling at a predetermined pulling rate so that the rising column is cooled relative to the melt, to form a crystallization front above the surface of the melt, wherein the melt has a composition so that the pulled single crystal column has a transition temperature from martensite to austenite that is below 37 degrees Celsius,applying a predetermined hydrostatic pressure on the column and heating the column to a predetermined temperature, the predetermined pulling rate, hydrostatic pressure and temperature being sufficient to crystallize the alloy in the column into a single crystal, andrapidly quenching the single crystal.

View all claims
  • 4 Assignments
Timeline View
Assignment View
    ×
    ×