Trench polysilicon diode
First Claim
Patent Images
1. A method of manufacturing a semiconductor device comprising:
- forming a N−
(P−
) type epitaxial region on N+(P+) type substrate;
forming a polysilicon diode trench in said epitaxial region;
forming an insulating layer in said polysilicon diode trench;
filling said polysilicon diode trench with polysilicon;
implanting a P+(N+) type dopant, forming a P+(N+) type region of said polysilicon in said polysilicon diode trench;
implanting a N+(P+) type dopant, forming a N+(P+) type region of said polysilicon in said polysilicon diode trench to form a polysilicon diode in said polysilicon diode trench, wherein a portion of said polysilicon diode is lower than said top surface of said polysilicon diode trench; and
forming a metal-oxide-semiconductor field effect transistor (MOSFET) transistor trench in said epitaxial region,wherein, forming said diode is performed prior to forming said MOSFET transistor trench.
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Abstract
Embodiments of the present invention include a method of manufacturing a trench polysilicon diode. The method includes forming a N−(P−) type epitaxial region on a N+(P+) type substrate and forming a trench in the N−(P−) type epitaxial region. The method further includes forming a insulating layer in the trench and filling the trench with polysilicon forming a top surface of the trench. The method further includes forming P+(N+) type doped polysilicon region and N+(P+) type doped polysilicon region in the trench and forming a diode in the trench wherein a portion of the diode is lower than the top surface of the trench.
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Citations
20 Claims
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1. A method of manufacturing a semiconductor device comprising:
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forming a N−
(P−
) type epitaxial region on N+(P+) type substrate;forming a polysilicon diode trench in said epitaxial region; forming an insulating layer in said polysilicon diode trench; filling said polysilicon diode trench with polysilicon; implanting a P+(N+) type dopant, forming a P+(N+) type region of said polysilicon in said polysilicon diode trench; implanting a N+(P+) type dopant, forming a N+(P+) type region of said polysilicon in said polysilicon diode trench to form a polysilicon diode in said polysilicon diode trench, wherein a portion of said polysilicon diode is lower than said top surface of said polysilicon diode trench; and forming a metal-oxide-semiconductor field effect transistor (MOSFET) transistor trench in said epitaxial region, wherein, forming said diode is performed prior to forming said MOSFET transistor trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of manufacturing a trench polysilicon diode comprising:
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forming a trench in a N−
(P−
) type epitaxial region on a N+(P+) type substrate;forming an insulating layer in said trench wherein said insulating layer lines said trench; filling said trench with a polysilicon forming a top surface of said trench; forming a diode in said body region wherein a portion of said diode is lower than said top surface of said trench; and forming a MOSFET transistor trench on said epitaxial region, wherein forming said diode is performed prior to forming said MOSFET transistor trench. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification