Method of forming a transistor having gate protection and transistor formed according to the method
First Claim
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1. A method of making a microelectronic device comprising:
- providing a transistor structure including a transistor gate, a diffusion layer supra-adjacent the gate, a first spacer adjacent one side of the gate and a second spacer adjacent another side of the gate;
providing a protective cap super-adjacent the gate;
providing contact regions super-adjacent the diffusion layer, the contact regions including a first contact region adjacent the first spacer and one side of the protective cap, and a second contact region adjacent the second spacer and an opposite side of the protective cap; and
a first ILD layer encompassing the gate, the first spacer and the second spacer, and wherein providing a protective cap comprises;
providing a sacrificial cap onto the gate;
providing a second ILD layer encompassing the sacrificial cap super-adjacent the first ILD layer,defining a protective cap recess by removing the sacrificial cap from the second ILD layer,forming a protective cap body by providing a protective material in the protective cap recess;
removing portions of the second ILD layer to provide the protective cap.
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Abstract
A microelectronic device and a method of forming same. The method comprises: a transistor gate; a first spacer and a second spacer respectively adjacent a first side and a second side of the gate; a diffusion layer supra-adjacent the gate; contact regions super-adjacent the diffusion layer and adjacent the first spacer and the second spacer; a protective cap super-adjacent the gate and between the contact regions, the protective cap being adapted to protect the device from shorts between the gate and the contact regions.
69 Citations
19 Claims
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1. A method of making a microelectronic device comprising:
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providing a transistor structure including a transistor gate, a diffusion layer supra-adjacent the gate, a first spacer adjacent one side of the gate and a second spacer adjacent another side of the gate; providing a protective cap super-adjacent the gate; providing contact regions super-adjacent the diffusion layer, the contact regions including a first contact region adjacent the first spacer and one side of the protective cap, and a second contact region adjacent the second spacer and an opposite side of the protective cap; and a first ILD layer encompassing the gate, the first spacer and the second spacer, and wherein providing a protective cap comprises; providing a sacrificial cap onto the gate; providing a second ILD layer encompassing the sacrificial cap super-adjacent the first ILD layer, defining a protective cap recess by removing the sacrificial cap from the second ILD layer, forming a protective cap body by providing a protective material in the protective cap recess; removing portions of the second ILD layer to provide the protective cap. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification