Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
First Claim
Patent Images
1. A low voltage operating thin film transistor (TFT) structure comprising:
- a source electrode;
a drain electrode;
a gate electrode; and
a gate insulator that is coupled to said source electrode, drain electrode, and gate electrode, said gate insulator completely surrounds said gate electrode with room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltage, said gate insulator comprises amorphous or partially nanocrystalline films having at least one material selected from the group consisting of Bi1.5Zn1.0M1.5O7 (M=Ta, Sb), or 0.1˜
5% Ni, Mg, or Mn doped (Ba1−
xSrx)TiO3 at room temperature.
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Abstract
A thin film transistor (TFT) includes a source electrode, a drain electrode, and a gate electrode. A gate insulator is coupled to the source electrode, drain electrode, and gate electrode. The gate insulator includes room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltage.
84 Citations
20 Claims
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1. A low voltage operating thin film transistor (TFT) structure comprising:
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a source electrode; a drain electrode; a gate electrode; and a gate insulator that is coupled to said source electrode, drain electrode, and gate electrode, said gate insulator completely surrounds said gate electrode with room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltage, said gate insulator comprises amorphous or partially nanocrystalline films having at least one material selected from the group consisting of Bi1.5Zn1.0M1.5O7 (M=Ta, Sb), or 0.1˜
5% Ni, Mg, or Mn doped (Ba1−
xSrx)TiO3 at room temperature. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of forming a thin film transistor (TFT) structure comprising:
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forming a source electrode; forming a drain electrode; forming a gate electrode; and forming a gate insulator that is coupled to source electrode, drain electrode, and gate electrode, said gate insulator completely surrounds said gate electrode with room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltages, said gate insulator comprises amorphous or partially nano crystalline films having at least one material selected from the group consisting of Bi1.5Zn1.0M1.5O7 (M=Ta, Sb), or 0.1˜
5% Ni, Mg, or Mn doped (Ba1−
xSrx)TiO3 at room temperature. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification