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Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications

  • US 7,544,967 B2
  • Filed: 03/28/2006
  • Issued: 06/09/2009
  • Est. Priority Date: 03/28/2005
  • Status: Expired due to Fees
First Claim
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1. A low voltage operating thin film transistor (TFT) structure comprising:

  • a source electrode;

    a drain electrode;

    a gate electrode; and

    a gate insulator that is coupled to said source electrode, drain electrode, and gate electrode, said gate insulator completely surrounds said gate electrode with room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltage, said gate insulator comprises amorphous or partially nanocrystalline films having at least one material selected from the group consisting of Bi1.5Zn1.0M1.5O7 (M=Ta, Sb), or 0.1˜

    5% Ni, Mg, or Mn doped (Ba1−

    x
    Srx)TiO3 at room temperature.

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