Capacitive micromachined ultrasound transducer fabricated with epitaxial silicon membrane
First Claim
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1. A capacitive micromachined ultrasound transducer cell comprising:
- a substrate having a lower electrode formed therein;
a diaphragm disposed adjacent to the lower electrode such that a gap having a first gap width is formed between the diaphragm and the lower electrode, wherein the diaphragm consists of one of a first epitaxial layer or a first polysilicon layer;
a dielectric floor disposed inside the gap; and
a stress reducing material disposed in one of the first epitaxial layer or the first polysilicon layer.
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Abstract
A capacitive micromachined ultrasound transducer (cMUT) cell is presented. The cMUT cell includes a lower electrode. Furthermore, the cMUT cell includes a diaphragm disposed adjacent to the lower electrode such that a gap having a first gap width is formed between the diaphragm and the lower electrode, wherein the diaphragm comprises one of a first epitaxial layer or a first polysilicon layer. In addition, a stress reducing material is disposed in the first epitaxial layer.
92 Citations
21 Claims
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1. A capacitive micromachined ultrasound transducer cell comprising:
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a substrate having a lower electrode formed therein; a diaphragm disposed adjacent to the lower electrode such that a gap having a first gap width is formed between the diaphragm and the lower electrode, wherein the diaphragm consists of one of a first epitaxial layer or a first polysilicon layer; a dielectric floor disposed inside the gap; and a stress reducing material disposed in one of the first epitaxial layer or the first polysilicon layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A capacitive micromachined ultrasound transducer cell comprising:
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a substrate; a lower electrode, wherein the lower electrode is either implanted or diffused in the substrate; a diaphragm disposed on a first substrate, wherein one of the diaphragm or the first substrate is oppositely doped, and wherein a level of doping in the diaphragm is different than a level of doping in the first substrate, and wherein the diaphragm is disposed on a plurality of support posts to form a composite structure having a gap between the lower electrode and the diaphragm; and a dielectric floor disposed inside the gap. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A capacitive micromachined ultrasound transducer cell comprising:
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a substrate; a cavity formed in a topside of the substrate, wherein the cavity is defined by a plurality of support posts; a lower electrode exposed at a bottom of the cavity and formed within the substrate; a diaphragm disposed on the plurality of support posts to form a composite structure having a gap between the lower electrode and the diaphragm; a dielectric floor disposed inside the gap; and a stress reducing material disposed in the diaphragm. - View Dependent Claims (20, 21)
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Specification