×

Method and apparatus to measure threshold shifting of a MOSFET device and voltage difference between nodes

  • US 7,545,161 B2
  • Filed: 08/02/2007
  • Issued: 06/09/2009
  • Est. Priority Date: 08/02/2007
  • Status: Expired due to Fees
First Claim
Patent Images

1. A circuit for measuring threshold-voltage (Vt) shifts of a MOSFET device, comprising:

  • a Vt reference sensor;

    a comparator for receiving inputs from said Vt reference sensor and a Vt target sensor, said comparator having an output coupled to a voltage measuring device, whereinsaid Vt reference sensor comprises a reference voltage generator connected to a reference voltage sensor; and

    a digitally programmable current source (IDAC) connected to an input of said reference voltage sensor.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×