Method and apparatus to measure threshold shifting of a MOSFET device and voltage difference between nodes

• US 7,545,161 B2
• Filed: 08/02/2007
• Issued: 06/09/2009
• Est. Priority Date: 08/02/2007
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Wang, Ping-Chuan, Yang, Zhijian, Guo, Jong-Ru, Hsu, Louis
• Primary Examiner(s): Nguyen; Ha Tran T
• Assistant Examiner(s): ISLA RODAS, RICHARD
• Application Number:
  US11/832,796
• Publication Number:
  US 20090033355A1
• Time in Patent Office: 677 Days
• Field of Search: 324763-765, 324/98, 324/158.1
• US Class Current: 324/750.3
• CPC Class Codes: G01R 31/2621 for testing field effect transistors, i.e. FET's

Abstract

An on-chip circuit to quantitatively measure threshold voltage shifts of a MOSFET. The circuit includes a programmable Vt reference sensor; a programmable Vt monitoring sensor; and a comparator for receiving inputs from the reference and monitoring sensors providing an output flag signal. The shifting of the MOSFET device voltage threshold monitors process variations, geometry sensitivity, plasma damage, stress, and hot carriers and other device damages. The same circuit also measures voltage differences between any two nodes in an integrated circuit chip or wafer.

Claims

1. A circuit for measuring threshold-voltage (Vt) shifts of a MOSFET device, comprising:

a Vt reference sensor;

a comparator for receiving inputs from said Vt reference sensor and a Vt target sensor, said comparator having an output coupled to a voltage measuring device, wherein

said Vt reference sensor comprises a reference voltage generator connected to a reference voltage sensor; and

a digitally programmable current source (IDAC) connected to an input of said reference voltage sensor.

2. The circuit as recited in claim 1, wherein said comparator is a differential amplifier.

3. The circuit as recited in claim 1, wherein said Vt reference sensor and target sensor are programmable.

4. The circuit as recited in claim 1, wherein said comparator further provides an output flag signal to said voltage measuring device coupled thereto.

5. The circuit as recited in claim 1, wherein said Vt target sensor further comprises:

a target voltage generator;

a target voltage sensor connected to said target voltage generator; and

an IDAC attached to said target voltage sensor.

6. The circuit as recited in claim 1, wherein said reference voltage generator is protected by a gate tie-down diode to avoid Vt shifting.

7. The circuit as recited in claim 6, wherein when said Vt shifts to an increasing value, said shifting is measured by said IDAC coupled to said reference voltage sensor.

8. The circuit as recited in claim 6, wherein when said Vt shifts to a decreasing value, said shifting is measured by said IDAC coupled to the target voltage sensor.

9. The circuit as recited in claim 1 further comprising a multiplexer having inputs respectively connected to said target voltage sensors and having an output connected to said comparator.

10. The circuit as recited in claim 9, wherein said multiplexer selects one of a plurality of target testsites respectively connected to said target voltage sensors measuring the Vt of said target testsite.

11. An on-chip circuit for measuring threshold voltage (Vt) shifts of a MOSFET device, comprising:

a Vt reference sensor;

a plurality of Vt target sensors, each of said plurality of Vt target sensors having a target voltage generator and a target voltage sensing unit, and having their respective output connected to a multiplexer; and

a comparator for receiving inputs from said Vt reference sensor and an output of said multiplexer, said comparator having an output coupled to a voltage measuring device.

12. A method of measuring threshold voltage (Vt) shifts of a MOSFET device, comprising steps of:

sensing a Vt reference voltage;

sensing a plurality of Vt target voltages using a plurality of Vt target sensors, each of which having a target voltage generator and a target voltage sensor, and having their respective output connected to a multiplexer;

comparing said sensed Vt reference voltage against a voltage at an output of said multiplexer, said multiplexer having an output coupled to a voltage measuring device;

measuring a reference voltage generated by a reference voltage generator upon sensing a reference voltage generated by a reference voltage sensor; and

programming a current source (IDAC) connected to an input of said reference voltage sensor.

13. The method as recited in claim 12 further comprising the step of:

sensing a reference voltage Vt′

sensed by said reference voltage sensor;

sensing a target voltage Vt generated by said target voltage generator and sensed by said target voltage sensor, and having an output thereof connected to a multiplexer provided with an output coupled to a voltage measuring device;

comparing said sensed reference voltage Vt′

against a voltage at said output of said multiplexer;

comparing said sensed reference voltage Vt′

to said sensed target voltage Vt, and determining a difference (Vt′

−

Vt), wherein if Vt′

>

Vt, then Vt is increased by a first voltage amount Δ

V to bring Vt=Vt′

, wherein Δ

V=Io×

R; and

if Vt>

Vt′

, then Vt′

is increased to a second voltage amount Δ

V′

to bring Vt′

=Vt, wherein Δ

V′

=Io×

R, Io being an additional current resulting from said comparison, and R is a predetermined resistance value.

14. The method as recited in claim 12 wherein said programming said a current source (IDAC) connected to an input of said reference voltage sensor is performed digitally.