Sensor array integrated electrochemical chip, method of forming same, and electrode coating

• US 7,547,381 B2
• Filed: 09/26/2003
• Issued: 06/16/2009
• Est. Priority Date: 09/26/2003
• Status: Expired due to Fees

• Current Assignee: Agency For Science Technology and Research (Government of Singapore), National University of Singapore
• Original Assignee: Agency For Science Technology and Research and National University of Singapore
• Inventors: Cui, Hui Fang, Sheu, Fwu-Shan, Ye, Jianshan, Chen, Yu, Chong, Ser Choong
• Primary Examiner(s): Olsen; Kaj K
• Application Number:
  US10/672,366
• Publication Number:
  US 20050067279A1
• Time in Patent Office: 2,090 Days
• Field of Search: 204/403.13, 204/412, 438/1
• US Class Current: 205/766
• CPC Class Codes: B01L 3/508 rigid containers not provided for above
• CPC Class Codes: G01N 27/403 Cells and electrode assemblies

Abstract

A sensor array integrated electrochemical chip is provided wherein the chip has an array of electrodes. The array may be formed on a base plate bonded to a cover plate having an opening. The opening can be a window or a depression. The plates are bounded such that they define a cavity, with the array being within the cavity. Conducting lines for connecting the electrodes to electrochemical instruments may be formed on the same surface of the base plate on which the electrodes are formed. At least one of the electrodes may be covered by a coating doped with a ferrocene compound. The coating may be a supported bilayer lipid membrane doped with benzoylferrocene. The doped ferrocene compound may be oxidized.

Claims

1. A method of forming an electrochemical chip, comprising:

forming a first plate by;

depositing a conducting layer on a first support; and

etching said conducting layer to form an electrode array;

covering at least one electrode of said electrode array with a coating doped with a ferrocene compound;

irreversibly oxidizing said ferrocene compound during said forming said electrochemical chip;

forming a second plate by;

etching an opening in a second support;

bonding said second plate to said first plate such that said first plate and said second plate define a cavity, with said electrode array being within said cavity.

2. The method of claim 1 further comprising etching said conducting layer to form a plurality of conducting lines, each of said conducting lines extending from an electrode of said electrode array outwardly beyond a periphery of said electrode array.

3. The method of claim 1 further comprising forming said first support by depositing an insulation layer on a silicon wafer.

4. The method of claim 3 further comprising depositing an overlying insulation layer over said conducting layer about a periphery of said array, said second plate being bonded to said first plate at said overlying insulation layer.

5. The method of claim 1 wherein said second support comprises a silicon wafer.

6. The method of claim 1 further comprising selecting a degree of oxidization and oxidizing said ferrocene compound by said selected degree of oxidization.

7. The method of claim 1 wherein said irreversibly oxidizing said ferrocene compound comprises immersing said at least one electrode in an electrolytic solution after covering said at least one electrode with said coating and cyclically subjecting said at least one electrode to potential changes.

8. The method of claim 7 wherein said ferrocene compound is benzoylferrocene.

9. The method of claim 8 wherein said potential changes cycle between about −

0.3 V to +0.8 V.

10. The method of claim 1 wherein said coating is a supported bilayer lipid membrane.

11. The method of claim 1 further comprising selecting a doping concentration for said ferrocene compound and doping said coating with said ferrocene compound to said selected doping concentration.

12. The method of claim 1 wherein said opening is a window.

13. The method of claim 1 wherein said opening is a depression.

14. A method of forming an electrochemical chip, comprising:

forming a first plate by;

depositing a conducting layer on a first support; and

etching said conducting layer to form an electrode array;

covering at least one electrode of said electrode array with a coating doped with a ferrocene compound;

forming a second plate by;

etching an opening in a second support;

bonding said second plate to said first plate such that said first plate and said second plate define a cavity, with said electrode array being within said cavity, wherein said coating is a supported bilayer lipid membrane.

15. A method of forming an electrochemical chip, comprising:

forming a first plate by;

depositing a conducting layer on a first support; and

etching said conducting layer to form an electrode array;

covering at least one electrode of said electrode array with a coating doped with a ferrocene compound;

forming a second plate by;

etching an opening in a second support;

bonding said second plate to said first plate such that said first plate and said second plate define a cavity, with said electrode array being within said cavity, wherein said ferrocene compound is benzoylferrocene.

16. A method of forming an electrochemical chip, comprising:

forming a first plate by;

depositing a conducting layer on a first support; and

etching said conducting layer to form an electrode array;

covering at least one electrode of said electrode array with a coating doped with a ferrocene compound;

oxidizing said ferrocene compound during said forming said electrochemical chip;

forming a second plate by;

etching an opening in a second support;

bonding said second plate to said first plate such that said first plate and said second plate define a cavity, with said electrode array being within said cavity;

wherein said oxidizing said ferrocene compound comprises immersing said at least one electrode in an electrolytic solution after covering said at least one electrode with said coating and cyclically subjecting said at least one electrode to potential changes;

wherein said ferrocene compound is benzoylferrocene.

17. The method of claim 16 wherein said potential changes cycle between about −

0.3 V to +0.8 V.