Electrical conditioning of MEMS device and insulating layer thereof
First Claim
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1. A method of making a MEMS device, comprising:
- forming a first electrode layer;
forming a dielectric layer over the first electrode layer;
depositing a layer of sacrificial material over the dielectric layer, wherein the layer of sacrificial material is conductive, and wherein the layer of sacrificial material is in electrical communication with the dielectric layer; and
applying a voltage to said layer of sacrificial material.
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Abstract
A method of fabricating a MEMS device includes conditioning of an insulating layer by applying a voltage across the insulating layer via a conductive sacrificial layer for a period of time, prior to removal of the conductive sacrificial layer. This conditioning process may be used to saturate or stabilize charge accumulated within the insulating layer. The resistance across the insulating layer may also be measured to detect possible defects in the insulating layer.
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Citations
20 Claims
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1. A method of making a MEMS device, comprising:
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forming a first electrode layer; forming a dielectric layer over the first electrode layer; depositing a layer of sacrificial material over the dielectric layer, wherein the layer of sacrificial material is conductive, and wherein the layer of sacrificial material is in electrical communication with the dielectric layer; and applying a voltage to said layer of sacrificial material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of fabricating a MEMS device, comprising:
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providing a first electrode layer; providing a dielectric layer located over the first electrode layer; providing a conductive sacrificial layer located over the dielectric layer; providing a second electrode layer located over the conductive sacrificial layer; applying a voltage to the conductive sacrificial layer for a period of time; and etching the conductive sacrificial material to define a cavity. - View Dependent Claims (17, 18, 19, 20)
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Specification