Method for forming an array substrate including forming a transparent conductive layer on a photoresist and laser ablating
First Claim
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1. A method for manufacturing an array substrate, comprising:
- providing a substrate;
forming a contact pad, a thin film transistor (TFT), a pixel region, and a storage capacitor on the substrate;
forming a passivation layer on the contact pad, the TFT, the pixel region, and the storage capacitor;
forming a patterned photoresist layer on the passivation layer;
removing part of the passivation layer uncovered by the patterned photoresist layer to expose the pixel region, part of the TFT, part of the storage capacitor, and part of the contact pad;
forming a transparent conductive layer on the patterned photoresist layer, on the exposed pixel region, on the exposed part of the TFT, on the exposed part of the storage capacitor, and on the exposed part of the contact pad; and
applying a laser ablation process to remove the patterned photoresist layer and the transparent conductive layer on the patterned photoresist layer, so that the transparent conductive layer remains on the pixel region, on the part of the TFT, on the part of the storage capacitor, and on the part of the contact pad.
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Abstract
Disclosed is a method for manufacturing an array substrate utilizing a laser ablation process. With the laser ablation process, a photoresist layer is removed along with the transparent conductive layer therefrom, while maintaining other portions of the transparent conductive layer. Moreover, the laser ablation process of the invention does not need additional photo-mask, so the fabrication cost can be reduced.
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Citations
16 Claims
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1. A method for manufacturing an array substrate, comprising:
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providing a substrate; forming a contact pad, a thin film transistor (TFT), a pixel region, and a storage capacitor on the substrate; forming a passivation layer on the contact pad, the TFT, the pixel region, and the storage capacitor; forming a patterned photoresist layer on the passivation layer; removing part of the passivation layer uncovered by the patterned photoresist layer to expose the pixel region, part of the TFT, part of the storage capacitor, and part of the contact pad; forming a transparent conductive layer on the patterned photoresist layer, on the exposed pixel region, on the exposed part of the TFT, on the exposed part of the storage capacitor, and on the exposed part of the contact pad; and applying a laser ablation process to remove the patterned photoresist layer and the transparent conductive layer on the patterned photoresist layer, so that the transparent conductive layer remains on the pixel region, on the part of the TFT, on the part of the storage capacitor, and on the part of the contact pad. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification