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Semiconductor structures and memory device constructions

  • US 7,547,949 B2
  • Filed: 04/18/2006
  • Issued: 06/16/2009
  • Est. Priority Date: 05/26/2004
  • Status: Active Grant
First Claim
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1. An integrated circuit transistor comprising:

  • a semiconductor structure including a pair of pillars and a connecting portion therebetween, the pillars having a bottom portion and a top portion, and having inner surfaces that face each other and outer surfaces that do not face each other, wherein the pillar top portions comprise heavily doped semiconductor material;

    a dielectric material formed over at least a portion of the semiconductor structure;

    a gate material formed on the dielectric material and positioned adjacent to at least some of the outer surfaces of the pillars; and

    a channel extending between and forming an electrical connection between the bottom portions of the pair of pillars.

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