System and method to compensate for critical dimension non-uniformity in a lithography system

• US 7,548,315 B2
• Filed: 07/27/2006
• Issued: 06/16/2009
• Est. Priority Date: 07/27/2006
• Status: Expired due to Fees

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Van Horssen, Hermanus Gerardus
• Primary Examiner(s): STAFIRA, MICHAEL PATRICK
• Application Number:
  US11/493,851
• Publication Number:
  US 20080024744A1
• Time in Patent Office: 1,055 Days
• Field of Search: None
• US Class Current: 356/368
• CPC Class Codes: G03F 7/70441 Optical proximity correction [OPC]
• CPC Class Codes: G03F 7/70566 Polarisation control

Abstract

A system and method are used to compensate for critical dimension non-uniformity caused by different polarization directions in an illumination beam. A system comprises a source of radiation and an optical system. The source of radiation produces a beam of radiation. The optical system is configured to transmit a first portion of the beam having a first polarization direction during a first portion of a cycle and a second portion of the beam having a second polarization direction during a second portion of the cycle.

Claims

1. A lithography system, comprising:

an illumination system configured to generate an illumination beam of radiation, comprising,

a source of radiation configured to produce a beam of radiation; and

an optical system configured to transmit a first portion of the illumination beam having a first polarization direction during a first portion of a cycle and a second portion of the illumination beam having a second polarization direction during a second portion of the cycle;

a patterning device including first and second patterns having respective first and second optical proximity correction corresponding to the first and second polarization directions, the first and second patterns configured to pattern respective ones of the first and second portions of the illumination beam of radiation;

a detector configured to detect characteristics of the beam of radiation and to generate control signals that control whether the first or second pattern of the patterning device is used based on the detected characteristics; and

a projection system configured to project the first and second patterned beams onto a target portion of a substrate.

2. The lithography system of claim 1, wherein the optical system comprises:

a polarizer; and

an actuator configured to rotate the polarizer 90 degrees between the first portion and the second portion of the cycle.

3. The lithography system of claim 1, wherein the optical system comprises:

a polarizing beam splitter; and

an actuator configured to rotate the polarizing beam splitter 90 degrees between the first portion and the second portion of the cycle.

4. The lithography system of claim 1, wherein the patterning device is configured to change to a respective one of the first and second patterns on the patterning device based on the detected characteristics.

5. The lithography system of claim 1, wherein the lithography system is configured to establish the first portion of the cycle as a first exposure pass in a first scanning direction and the second portion of the cycle as a second exposure pass in a second, opposite scanning direction.

6. The lithography system of claim 1, wherein at least one of the source of radiation, the patterning device, and the illumination system is configured to be adjusted during the first and second portions of the cycle to correspond to the polarization direction.

7. The lithography system of claim 1, wherein the patterning device comprises an array of individually controllable elements, the array configured to form the first or second patterns thereon based on the detected characteristics.

8. The lithography system of claim 1, further comprising:

a storage device configured to store information correlating a configuration of the optical system to a configuration of the patterning device; and

wherein the configuration of the optical system is configured to vary and the information is used to control whether the first or second pattern is used to pattern the beam of radiation based on a configuration of the optical system.

9. A method, comprising:

producing a beam of radiation during an exposure cycle;

directing a first portion of the beam having a first polarization direction onto a patterning device, comprising a first pattern including a first optical proximity correction, during a first portion of the exposure cycle;

projecting the patterned beam onto a target portion of a substrate;

directing a second portion of the beam having a second polarization direction onto the patterning device, comprising a second pattern including a second optical proximity correction, during a second portion of the exposure cycle;

projecting the patterned beam onto the target portion of the substrate;

detecting characteristics of the beam of radiation; and

controlling whether the first or second pattern of the patterning device is used based on the detected characteristics.

10. Forming an integrated circuit on a wafer using the method of claim 9.

11. Forming a flat panel device on a flat panel glass substrate using the method of claim 9.

12. The method of claim 9, wherein the controlling comprises adjusting a pattern of the patterning device to correlate with whether the first portion or the second portion of the beam is being patterned.

13. The method of claim 9, wherein the controlling comprises changing a pattern formed by an array of individually controllable elements, the array forming the patterning device, such that the array is configured to form at least one of the first and second patterns thereon based on the detected characteristics.