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Inverter apparatus with improved gate drive for power MOSFET

  • US 7,551,004 B2
  • Filed: 01/24/2006
  • Issued: 06/23/2009
  • Est. Priority Date: 02/25/2005
  • Status: Active Grant
First Claim
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1. An inverter apparatus, comprising:

  • a first power MOSFET having a source/drain connected to an output terminal;

    a second power MOSFET having a source/drain connected to said output terminal;

    a first gate drive circuit driving a gate of said first power MOSFET; and

    a second gate drive circuit driving a gate of said second power MOSFET;

    wherein, said first gate drive circuit includes,a first discharging path connected with said gate of said first power MOSFET, said first discharging path including a set of first serially-connected diodes which are forward-connected in a direction of a first discharge current from said gate of said first power MOSFET,said second gate drive circuit includes,a second discharging path connected with said gate of said second power MOSFET, said second discharging path comprising a set of second serially-connected diodes which are forward-connected in a direction of a second discharge current from said gate of said second power MOSFET, andduring pull-down of said gate of said first power MOSFET followed by pull-up of said gate of said second power MOSFET, said first gate drive circuit drives said gate of said first power MOSFET so that when said second gate drive circuit drives a gate-source voltage of said second power MOSFET to a threshold voltage of said second power MOSFET, a gate-source voltage of said first power MOSFET is always higher than 0V and lower than a threshold voltage of said first power MOSFET.

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