Particle-optical systems and arrangements and particle-optical components for such systems and arrangements

• US 7,554,094 B2
• Filed: 06/13/2007
• Issued: 06/30/2009
• Est. Priority Date: 09/05/2003
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated, Carl Zeiss Microscopy GmbH (Carl-Zeiss-Stiftung)
• Original Assignee: Applied Materials Incorporated, Carl Zeiss AG (Carl-Zeiss-Stiftung)
• Inventors: Knippelmeyer, Rainer, Kienzle, Oliver, Mueller, Heiko, Kemen, Thomas, Casares, Antonio, Haider, Maximilian, Uhlemann, Stephan
• Primary Examiner(s): Souw; Bernard E
• Application Number:
  US11/808,845
• Publication Number:
  US 20080054184A1
• Time in Patent Office: 748 Days
• Field of Search: 250/306, 250/307, 250309-311, 250/396.R, 250/396.ML, 250/492.1, 250/492.2, 250/492.3, 250/492.22
• US Class Current: 250/396.0ML
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: H01J 2237/0435 Multi-aperture
• CPC Class Codes: H01J 2237/0453 multiple apertures
• CPC Class Codes: H01J 2237/047 Changing particle velocity
• CPC Class Codes: H01J 2237/04735 with electrostatic means
• CPC Class Codes: H01J 2237/04756 with electrostatic means
• CPC Class Codes: H01J 2237/06 Sources
• CPC Class Codes: H01J 2237/14 magnetic
• CPC Class Codes: H01J 2237/2817 Pattern inspection
• CPC Class Codes: H01J 2237/31774 Multi-beam
• CPC Class Codes: H01J 37/04 Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement H01J37/32009, H01J37/32623, H01J37/3266, H01J37/32697 take precedence; electron or ion-optical systems for localised treatment of objects H01J37/3007
• CPC Class Codes: H01J 37/09 Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
• CPC Class Codes: H01J 37/10 Lenses
• CPC Class Codes: H01J 37/14 magnetic
• CPC Class Codes: H01J 37/153 Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
• CPC Class Codes: H01J 37/28 with scanning beams H01J37/268, H01J37/292, H01J37/2955 take precedence
• CPC Class Codes: H01J 37/3007 Electron or ion-optical systems
• CPC Class Codes: H01J 37/3177 Multi-beam, e.g. fly's eye, comb probe

Abstract

An electron-optical arrangement provides a primary beam path for a beam of primary electrons and a secondary beam path for secondary electrons. The electron-optical arrangement includes a magnet arrangement having first, second and third magnetic field regions. The first magnetic field region is traversed by the primary beam path and the secondary beam path. The second magnetic field region is arranged in the primary beam path upstream of the first magnetic field region and is not traversed by the secondary beam path. The first and second magnetic field regions deflect the primary beam path in substantially opposite directions. The third magnetic field region is arranged in the secondary beam path downstream of the first magnetic field region and is not traversed by the first beam path. The first and third magnetic field regions deflect the secondary beam path in a substantially same direction.

Claims

1. A particle arrangement providing a primary beam path for a primary beam of charged particles to an object, and providing a secondary beam path for charged-particles extending from the object to a detector arrangement, the particle-optical arrangement comprising:

at least one charged-particle source for generating at least one beam of charged particles, the primary beam path extending from the at least one charged-particle source to the object;

a first focusing lens providing a focusing magnetic field;

an objective lens; and

a beam splitter, wherein the beam splitter is disposed in the primary beam path between the at least one charged-particle source and the objective lens and in the secondary beam path between the objective lens and the detector arrangement;

wherein the objective lens provides a focusing magnetic field for the charged-particles of the primary beam and for the charged particles of the secondary beam; and

wherein the at least one charged-particle source is arranged within the magnetic field provided by the first focusing lens.

2. The particle-optical arrangement of claim 1, wherein the magnetic field where the at least one charged-particle source is arranged is a homogeneous magnetic field.

3. A particle-optical arrangement, comprising:

at least one charged-particle source for generating at least one beam of charged particles,

at least one multi-aperture plate having a plurality of apertures formed in the plate, wherein the plurality of apertures is arranged in a first pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the aperture plate; and

a first focusing lens providing a magnetic field having a focusing field portion in a region between the charged-particle source and the multi-aperture plate;

wherein the at least one charged-particle source is arranged within the magnetic field provided by the first focusing lens.

4. The particle-optical arrangement of claim 3, wherein the magnetic field where the at least one charged-particle source is arranged is a homogeneous magnetic field.

5. The particle-optical arrangement of claim 3, wherein the first focusing lens is further configured to provide a focusing field throughout a first region adjacent to the multi-aperture plate in a direction of the at least one beam;

and

wherein the particle-optical arrangement further comprises an energy changing electrode providing an electrical field for changing a kinetic energy of charged particles of the at least one beam throughout a second region adjacent to the multi-aperture plate in the direction of the at least one beam, and wherein the first region of the focusing field and the second region of the electrical field overlap in an overlapping region.

6. The particle-optical arrangement according to claim 5, wherein the overlapping region is located upstream of the multi-aperture plate.

7. The particle-optical arrangement according to claim 5, wherein the overlapping region is located downstream of the multi-aperture plate.

8. The particle-optical arrangement according to claim 5, wherein the electrical field is a decelerating electrical field for reducing the kinetic energy of the charged particles of the beam.

9. The particle-optical arrangement according to claim 5, wherein the electrical field is an accelerating electrical field for increasing the kinetic energy of the charged particles of the beam.

10. The particle-optical arrangement according to claim 5, wherein an overlap between the energy changing field and the focusing field is more than 1%.

11. A particle-optical arrangement, comprising:

at least one charged-particle source for generating at least one beam of charged particles;

at least one multi-aperture plate having a plurality of apertures formed in the plate, wherein a plurality of charged-particle beamlets is formed from the at least one beam of charged particles downstream of the aperture plate;

a first focusing lens providing a focusing field throughout a first region adjacent to the multi-aperture plate in a direction of the at least one beam; and

an energy changing electrode providing an electrical field for changing a kinetic energy of charged particles of the beam throughout a second region adjacent to the multi-aperture plate in the direction of the at least one beam, and wherein the first region of the focusing field and the second region of the electrical field overlap in an overlapping region.

12. The particle-optical arrangement according to claim 11, wherein the overlapping region is located upstream of the multi-aperture plate.

13. The particle-optical arrangement according to claim 11, wherein the overlapping region is located downstream of the multi-aperture plate.

14. The particle-optical arrangement according to claim 11, wherein the electrical field is a decelerating electrical field for reducing the kinetic energy of the charged particles of the beam.

15. The particle-optical arrangement according to claim 11, wherein the electrical field is an accelerating electrical field for increasing the kinetic energy of the charged particles of the beam.

16. The particle-optical arrangement according to claim 11, wherein an overlap between the energy changing field and the focusing field is more than 1%.

17. The particle-optical arrangement according to claim 11, further comprising an objective lens and a detector arrangement.

18. A charged-particle beam manipulation method, the method comprising:

generating at least one beam of charged particles with at least one charged-particle source;

forming a plurality of charged-particle beamlets from the at least one beam of charged particles with at least one multi-aperture plate having a plurality of apertures formed in the plate;

generating a magnetic field, wherein the at least one charged-particle source is positioned within the magnetic field; and

focusing the at least one beam of charged particles with the magnetic field.

19. The method of claim 18, further comprising

focusing the charged-particle beamlets to form an array of charged-particle beamlet foci on an object;

and

imaging the array of charged-particle beamlet foci.

20. A charged-particle beam manipulation method, the method comprising:

generating at least one beam of charged particles, the particles forming a plurality of charged-particle beamlets from the at least one beam of charged particles with at least one multi-aperture plate having a plurality of apertures formed in the plate;

providing a focusing field and a kinetic energy changing field overlapping the focusing field, wherein the kinetic energy changing field changes a kinetic energy of the at least one beam of charged particles upstream of the at least one multi-aperture plate.

21. The method of claim 20, further comprising

focusing the charged-particle beamlets to form an array of charged-particle beamlet foci on an object;

and

imaging the array of charged-particle beamlet foci.

22. A charged-particle beam manipulation method, the method comprising:

generating at least one beam of charged particles, the particles forming a plurality of charged-particle beamlets from the at least one beam of charged particles with at least one multi-aperture plate having a plurality of apertures formed in the plate;

providing a focusing field and a kinetic energy changing field overlapping the focusing field, wherein the kinetic energy changing field changes a kinetic energy of the plurality of charged-particle beamlets downstream of the at least one multi-aperture plate.

23. The method of claim 22, further comprising

focusing the charged-particle beamlets to form an array of charged-particle beamlet foci on an object;

and

imaging the array of charged-particle beamlet foci.