Organic semiconductor device

• US 7,554,121 B2
• Filed: 12/15/2004
• Issued: 06/30/2009
• Est. Priority Date: 12/26/2003
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Hirakata, Yoshiharu, Ishitani, Tetsuji, Imahayashi, Ryota, Fukai, Shuji
• Primary Examiner(s): Le; Thao P.
• Application Number:
  US11/011,027
• Publication Number:
  US 20050139823A1
• Time in Patent Office: 1,658 Days
• Field of Search: 257/E51.05, 257/E51.029, 257/E51.042, 257/E51.049, 257/79, 257/88, 438/99
• US Class Current: 257/79
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 71/50 Forming devices by joining two substrates together, e.g. lamination techniques
• CPC Class Codes: H10K 85/10 Organic polymers or oligomers
• CPC Class Codes: H10K 85/111 comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
• CPC Class Codes: H10K 85/113 Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
• CPC Class Codes: H10K 85/114 Poly-phenylenevinylene; Derivatives thereof
• CPC Class Codes: H10K 85/143 Polyacetylene; Derivatives thereof
• CPC Class Codes: H10K 85/611 Charge transfer complexes
• CPC Class Codes: H10K 85/621 Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
• CPC Class Codes: H10K 85/761 Biomolecules or bio-macromolecules, e.g. proteins, chlorophyl, lipids or enzymes

Abstract

It is an object of the present invention to provide a method for manufacturing an inexpensive organic TFT which does not depend on an expensive dedicated device and does not expose an organic semiconductor to atmospheric air. Moreover, it is another object of the present invention to provide a method for manufacturing an organic TFT at low temperature so as not to cause a problem of pyrolyzing a material. In view of the foregoing problems, one feature of the present invention is that a film-like protector which serves as a protective film is provided over an organic semiconductor film. The film-like protector can be formed by being fixed to a film-like support body with an adhesive agent or the like.

Claims

1. A semiconductor device comprising:

an organic semiconductor film provided over an insulating film;

a light emitting element provided over the insulating film; and

a film-like support body provided on the organic semiconductor film via an adhesive layer,

wherein the adhesive layer is in contact with the organic semiconductor film and the light emitting element.

16. The semiconductor device according to claim 1, wherein the support body is polyimide, polyester, polyethylene, polyethylene terephthalate (PET), polyethylene naphtalate (PEN), polyethersulfone (PES), or polycarbonate (PC).

21. The semiconductor device according to claim 1, wherein the adhesive layer includes epoxy-based adhesive agent, a urethane-based adhesive agent, an emulsion-based adhesive agent, a synthetic rubber-based adhesive agent, an elastic adhesive agent, or a denatured acrylate based adhesive agent.

26. The semiconductor device according to claim 1, wherein the support body has a thickness of from 0.05 to 0.5 mm.

31. The semiconductor device according to claim 1, wherein said semiconductor device is incorporated in at least one selected from the group consisting of a cellular phone, a TV receiver, and an ID card.

36. The semiconductor device according to claim 1, further comprising a film including an inorganic material over the film-like support body.

2. A semiconductor device comprising:

a substrate having an insulating surface;

a gate electrode provided over the substrate;

a gate insulating film provided over the gate electrode;

a source electrode and a drain electrode provided over the gate insulating film;

an organic semiconductor film provided over the gate insulating film, and the source electrode and the drain electrode;

a light emitting element provided over the substrate, the light emitting element being electrically connected with the source electrode or the drain electrode; and

a film-like support body provided on the organic semiconductor film via an adhesive layer,

wherein the adhesive layer is in contact with the organic semiconductor film, the source electrode and the drain electrode, and the light emitting element.

12. The semiconductor device according to claim 2, wherein the substrate is a borosilicate glass or a quartz glass.

17. The semiconductor device according to claim 2, wherein the support body is polyimide, polyester, polyethylene, polyethylene terephthalate (PET), polyethylene naphtalate (PEN), polyethersulfone (PES), or polycarbonate (PC).

22. The semiconductor device according to claim 2, wherein the adhesive layer includes epoxy-based adhesive agent, a urethane-based adhesive agent, an emulsion-based adhesive agent, a synthetic rubber-based adhesive agent, an elastic adhesive agent, or a denatured acrylate based adhesive agent.

27. The semiconductor device according to claim 2, wherein the support body has a thickness of from 0.05 to 0.5 mm.

32. The semiconductor device according to claim 2, wherein said semiconductor device is incorporated in at least one selected from the group consisting of a cellular phone, a TV receiver, and an ID card.

37. The semiconductor device according to claim 2, further comprising a film including an inorganic material over the film-like support body.

3. A semiconductor device comprising:

a substrate having an insulating surface;

a gate electrode provided over the substrate;

a gate insulating film provided over the gate electrode;

an organic semiconductor film provided over the gate insulating film;

a source electrode and a drain electrode provided to cover a part of the organic semiconductor film;

a light emitting element provided over the substrate, the light emitting element being electrically connected with the source electrode or the drain electrode; and

a film-like support body provided on the organic semiconductor film, and the source electrode and the drain electrode via an adhesive layer,

wherein the adhesive layer is in contact with the organic semiconductor film, the source electrode and the drain electrode, and the light emitting element.

13. The semiconductor device according to claim 3, wherein the substrate is a borosilicate glass or a quartz glass.

18. The semiconductor device according to claim 3, wherein the support body is polyimide, polyester, polyethylene, polyethylene terephthalate (PET), polyethylene naphtalate (PEN), polyethersulfone (PES), or polycarbonate (PC).

23. The semiconductor device according to claim 3, wherein the adhesive layer includes epoxy-based adhesive agent, a urethane-based adhesive agent, an emulsion-based adhesive agent, a synthetic rubber-based adhesive agent, an elastic adhesive agent, or a denatured acrylate based adhesive agent.

28. The semiconductor device according to claim 3, wherein the support body has a thickness of from 0.05 to 0.5 mm.

33. The semiconductor device according to claim 3, wherein said semiconductor device is incorporated in at least one selected from the group consisting of a cellular phone, a TV receiver, and an ID card.

4. A semiconductor device comprising:

a first conductive film provided over an insulating surface;

an insulating film provided over the first conductive film;

a second conductive film provided over the insulating film;

an organic semiconductor film provided over the insulating film and the second conductive film;

a light emitting element provided over the insulating surface, the light emitting element being electrically connected with the second conductive film; and

a film-like support body provided on the organic semiconductor film via an adhesive layer,

wherein the adhesive layer is in contact with the organic semiconductor film, the second conductive film, and the light emitting element.

6. The semiconductor device according to claim 4, wherein the first conductive film serves as a gate electrode.

8. The semiconductor device according to claim 4, wherein the second conductive film serves as a source electrode and a drain electrode.

10. The semiconductor device according to claim 4, wherein the insulating film serves as a gate insulating film.

14. The semiconductor device according to claim 4, wherein the substrate is a borosilicate glass or a quartz glass.

19. The semiconductor device according to claim 4, wherein the support body is polyimide, polyester, polyethylene, polyethylene terephthalate (PET), polyethylene naphtalate (PEN), polyethersulfone (PES), or polycarbonate (PC).

24. The semiconductor device according to claim 4, wherein the adhesive layer includes epoxy-based adhesive agent, a urethane-based adhesive agent, an emulsion-based adhesive agent, a synthetic rubber-based adhesive agent, an elastic adhesive agent, or a denatured acrylate based adhesive agent.

29. The semiconductor device according to claim 4, wherein the support body has a thickness of from 0.05 to 0.5 mm.

34. The semiconductor device according to claim 4, wherein said semiconductor device is incorporated in at least one selected from the group consisting of a cellular phone, a TV receiver, and an ID card.

5. A semiconductor device comprising:

a first conductive film provided over an insulating surface;

an insulating film provided over the first conductive film;

an organic semiconductor film provided over the insulating film;

a second conductive film provided over a part of the organic semiconductor film;

a light emitting element provided over the insulating surface, the light emitting element being electrically connected with the second conductive film; and

a film-like support body provided on the organic semiconductor film and the second conductive film via an adhesive layer r,

wherein the adhesive layer is in contact with the organic semiconductor film, the second conductive film, and the light emitting element.

7. The semiconductor device according to claim 5, wherein the first conductive film serves as a gate electrode.

9. The semiconductor device according to claim 5, wherein the second conductive film serves as a source electrode and a drain electrode.

11. The semiconductor device according to claim 5, wherein the insulating film serves as a gate insulating film.

15. The semiconductor device according to claim 5, wherein the substrate is a borosilicate glass or a quartz glass.

20. The semiconductor device according to claim 5, wherein the support body is polyimide, polyester, polyethylene, polyethylene terephthalate (PET), polyethylene naphtalate (PEN), polyethersulfone (PES), or polycarbonate (PC).

25. The semiconductor device according to claim 5, wherein the adhesive layer includes epoxy-based adhesive agent, a urethane-based adhesive agent, an emulsion-based adhesive agent, a synthetic rubber-based adhesive agent, an elastic adhesive agent, or a denatured acrylate based adhesive agent.

30. The semiconductor device according to claim 5, wherein the support body has a thickness of from 0.05 to 0.5 mm.

35. The semiconductor device according to claim 5, wherein said semiconductor device is incorporated in at least one selected from the group consisting of a cellular phone, a TV receiver, and an ID card.