Nitride-based compound semiconductor light emitting device, structural unit thereof, and fabricating method thereof

• US 7,554,124 B2
• Filed: 09/01/2005
• Issued: 06/30/2009
• Est. Priority Date: 09/02/2004
• Status: Active Grant

• Current Assignee: Sharp Fukuyama Laser Co., Ltd. (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Hata, Toshio
• Primary Examiner(s): Pizarro, Marcos D.
• Assistant Examiner(s): ARMAND, MARC ANTHONY
• Application Number:
  US11/219,139
• Publication Number:
  US 20060043387A1
• Time in Patent Office: 1,398 Days
• Field of Search: 257/13, 257 79-103, 257/E51.018, 257/E51.022, 257/E33.001, 257/E33.054, 257/E25.032, 257/E25.028
• US Class Current: 257/79
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A nitride-based compound semiconductor light emitting device includes a first conductive substrate, a first ohmic electrode formed on the first conductive substrate, a bonding metal layer formed on the first ohmic electrode, a second ohmic electrode formed on the bonding metal layer, and a nitride-based compound semiconductor layer formed on the second ohmic electrode. The nitride-based compound semiconductor layer includes at least a P-type layer, a light emitting layer and an N-type layer, and has a concave groove portion or a concave-shaped portion.

Claims

1. A nitride-based compound semiconductor light emitting device, comprising:

a first conductive substrate;

a first ohmic electrode formed on the first conductive substrate;

a first bonding metal layer formed on the first ohmic electrode;

a second bonding metal layer bonded to the first bonding metal layer;

a second ohmic electrode formed on the second bonding metal layer; and

a nitride-based compound semiconductor layer formed on the second ohmic electrode,

wherein the nitride-based compound semiconductor layer comprises a P-type layer, a light emitting layer and an N-type layer; and

a concave groove portion or a concave-shaped portion formed in each of two opposing side surfaces of the nitride-based compound semiconductor light emitting device, the concave groove portion or the concave-shaped portion extending at least from the nitride-based compound semiconductor layer to the second bonding metal layer such that a surface area of said nitride-based compound semiconductor layer on a side of said second ohmic electrode is smaller than a surface area on a side opposite to said second ohmic electrode.

2. The nitride-based compound semiconductor light emitting device according to claim 1, wherein the concave groove portion or concave-shaped portion extends from the nitride-based compound semiconductor layer to the first conductive substrate.

3. The nitride-based compound semiconductor light emitting device according to claim 1, wherein said first conductive substrate is a semiconductor of at least one kind of material selected from the group consisting of Si, GaAs, GaP, Ge and InP.

4. The nitride-based compound semiconductor light emitting device according to claim 1, further comprising a second substrate formed on the nitride-based compound semiconductor,

wherein the second substrate is an insulative substrate of sapphire, spinel or lithium niobate, or a conductive substrate of silicon carbide, silicon, zinc oxide or gallium arsenide.

5. The nitride-based compound semiconductor light emitting device according to claim 1, wherein the first bonding metal layer and the second bonding metal layer are formed of the same material.

6. The nitride based compound semiconductor light emitting device according to claim 1, wherein a side of the second bonding metal layer that bonds with the first bonding metal layer has a smaller surface area than a side of the nitride-based compound semiconductor layer opposite the second bonding metal layer.

7. The nitride-based compound semiconductor light emitting device according to claim 1, wherein a side of the first bonding metal layer that bonds with the second bonding metal layer has a larger surface area than a side of the second bonding metal layer opposite the first bonding metal layer.

8. The nitride-based compound semiconductor light emitting device according to claim 1, wherein the first bonding metal layer and the second bonding metal layer are formed of different materials from each other.

9. The nitride-based compound semiconductor light emitting device according to claim 2, wherein a side of the first bonding metal layer that bonds with the second bonding metal layer has a smaller surface area than a side of the first conductive substrate opposite the first bonding metal layer.