Display device
First Claim
Patent Images
1. A display device comprising:
- a substrate;
a thin film transistor including a semiconductor layer formed over the substrate;
a wiring electrically connected to the semiconductor layer;
a light-emitting element comprising;
a first electrode electrically connected to the wiring;
a light emitting layer over the first electrode; and
a second electrode over the light emitting layer, anda plurality of layers formed between the substrate and the light-emitting element, including;
a first layer having a refraction factor n1,a second layer over the first layer, having a refraction factor n2, anda third layer over the second layer, having a refraction factor n3,wherein n1<
n2>
n3,wherein an optical thickness of the second layer is substantially equal to the integral multiple of λ
/2, andwherein a center wavelength of a light emitted from the light-emitting element is λ
.
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Accused Products
Abstract
An active matrix display device which can easily improve the viewing angle characteristics. In the active matrix display device where light is emitted in the direction of a substrate over which thin film transistors are formed, when focusing on the multiple interference caused by the light emitted from a light-emitting element, which is reflected on the film used for forming the thin film transistors, effect on the multiple interference can be drastically reduced by forming the reflecting film to have the substantial optical thickness of λ/2, without losing the function of the thin film transistor.
55 Citations
42 Claims
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1. A display device comprising:
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a substrate; a thin film transistor including a semiconductor layer formed over the substrate; a wiring electrically connected to the semiconductor layer; a light-emitting element comprising; a first electrode electrically connected to the wiring; a light emitting layer over the first electrode; and a second electrode over the light emitting layer, and a plurality of layers formed between the substrate and the light-emitting element, including; a first layer having a refraction factor n1, a second layer over the first layer, having a refraction factor n2, and a third layer over the second layer, having a refraction factor n3, wherein n1<
n2>
n3,wherein an optical thickness of the second layer is substantially equal to the integral multiple of λ
/2, andwherein a center wavelength of a light emitted from the light-emitting element is λ
. - View Dependent Claims (2, 3, 4, 5)
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6. A display device comprising:
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a substrate; a thin film transistor including a semiconductor layer formed over the substrate; a wiring electrically connected to the semiconductor layer; a light-emitting element comprising; a first electrode electrically connected to the wiring; a light emitting layer over the first electrode; and a second electrode over the light emitting layer, and a plurality of layers formed between the substrate and the light-emitting element, including; a first layer having a refraction factor n1, a second layer over the first layer, having a refraction factor n2, and a third layer over the second layer, having a refraction factor n3, wherein n1>
n2<
n3,wherein an optical thickness of the second layer is substantially equal to the integral multiple of λ
/2, andwherein a center wavelength of a light emitted from the light-emitting element is λ
. - View Dependent Claims (7, 8, 9, 10)
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11. A display device comprising:
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a substrate; a first base insulating film over the substrate; a second base insulating film over the first base insulating film; a thin film transistor including a semiconductor layer over the second base insulating film; a first insulating film over the thin film transistor; a second insulating film over the first insulating film; a wiring formed over the second insulating film and electrically connected to the semiconductor layer through a contact hole; and a light-emitting element comprising; a first electrode electrically connected to the wiring; a light emitting layer over the first electrode; and a second electrode over the light emitting layer, wherein the first electrode transmits light, wherein the first base insulating film has a larger refraction factor than the substrate and than the second base insulating film, wherein the first insulating film has a larger refraction factor than the second insulating film and than the second base insulating film, wherein each optical thickness of the first base insulating film and the first insulating film is substantially equal to the integral multiple of λ
/2, andwherein a center wavelength of the light emitted from the light-emitting element is λ
. - View Dependent Claims (12)
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13. A display device comprising:
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a substrate; a first base insulating film over the substrate; a second base insulating film over the first base insulating film; a thin film transistor including a semiconductor layer over the second base insulating film; a first insulating film over the thin film transistor; a second insulating film over the first insulating film; a wiring formed over the second insulating film and electrically connected to the semiconductor layer through a contact hole; and a light-emitting element comprising; a first electrode electrically connected to the wiring; a light emitting layer over the first electrode; and a second electrode over the light emitting layer, wherein the first electrode transmits light, wherein the first base insulating film has a smaller refraction factor than the substrate and than the second base insulating film, wherein the first insulating film has a smaller refraction factor than the second insulating film and than the second base insulating film, wherein each optical thickness of the first base insulating film and the first insulating film is substantially equal to the integral multiple of λ
/2, andwherein a center wavelength of the light emitted from the light-emitting element is λ
. - View Dependent Claims (14)
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15. A display device comprising:
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a substrate; a first base insulating film over the substrate; a second base insulating film over the first base insulating film; a thin film transistor over the second base insulating film, including; a semiconductor layer, a gate insulating film adjacent to the semiconductor layer, and a gate electrode adjacent to the gate insulating film; a first insulating film over the thin film transistor; a second insulating film over the first insulating film; a wiring formed over the second insulating film and electrically connected to the semiconductor layer through a contact hole; and a light-emitting element comprising; a first electrode electrically connected to the wiring; a light emitting layer over the first electrode; and a second electrode over the light emitting layer, wherein the first electrode transmits light, wherein the first base insulating film has a larger refraction factor than the substrate and than the second base insulating film, wherein the first insulating film has a larger refraction factor than the second insulating film and than the gate insulating film, wherein a total optical thickness of the second base insulating film and the gate insulating film is L1, wherein each optical thickness of the first base insulating film and the first insulating film is L2, wherein m is an integer not less than 1, wherein L1=−
L2+(2m−
1)λ
/4 is substantially satisfied, andwherein a center wavelength of the light emitted from the light-emitting element is λ
. - View Dependent Claims (16)
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17. A display device comprising:
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a substrate; a first base insulating film over the substrate; a second base insulating film over the first base insulating film; a thin film transistor over the second base insulating film, including; a semiconductor layer, a gate insulating film adjacent to the semiconductor layer, and a gate electrode adjacent to the gate insulating film; a first insulating film over the thin film transistor; a second insulating film over the first insulating film; a wiring formed over the second insulating film and electrically connected to the semiconductor layer through a contact hole; and a light-emitting element comprising; a first electrode electrically connected to the wiring; a light emitting layer over the first electrode; and a second electrode over the light emitting layer, wherein the first electrode transmits light, wherein the first base insulating film has a smaller refraction factor than the substrate and than the second base insulating film, wherein the first insulating film has a smaller refraction factor than the second insulating film and than the gate insulating film, wherein a total optical thickness of the second base insulating film and the gate insulating film is L1, wherein each optical thickness of the first base insulating film and the first insulating film is L2, wherein m is an integer not less than 1, wherein L1=−
L2+(2m−
1)λ
/4 is substantially satisfied, andwherein a center wavelength of the light emitted from the light-emitting element is λ
. - View Dependent Claims (18)
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19. A display device comprising:
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a substrate; a first base insulating film over the substrate; a second base insulating film over the first base insulating film; a thin film transistor over the second base insulating film, including; a semiconductor layer, a gate insulating film adjacent to the semiconductor layer, and a gate electrode adjacent to the gate insulating film; a first insulating film over the thin film transistor; a second insulating film over the first insulating film; a wiring formed over the second insulating film and electrically connected to the semiconductor layer through a contact hole; and a light-emitting element comprising; a first electrode electrically connected to the wiring; a light emitting layer over the first electrode; and a second electrode over the light emitting layer, wherein the first electrode transmits light, wherein a total optical thickness of the second base insulating film and the gate insulating film is L1, wherein each optical thickness of the first base insulating film and the first insulating film is L2, wherein m is an integer not less than 1, wherein L1=−
L2+(2m−
1)λ
/4 is substantially satisfied,wherein a center wavelength of the light emitted from the light-emitting element is λ
,wherein a physical thickness of the first base insulating film is in the range of 120 to 162 nm, wherein a physical thickness of the first insulating film is in the range of 120 to 162 nm, and wherein a total physical thickness of the gate insulating film and the second base insulating film is in the range of 132 to 198 nm. - View Dependent Claims (20)
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21. A display device comprising:
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a substrate; a first base insulating film over the substrate; a second base insulating film over the first base insulating film; a thin film transistor including a semiconductor layer over the second base insulating film; an insulating film over the thin film transistor; a wiring formed over the insulating film and electrically connected to the semiconductor layer through a contact hole; and a light-emitting element comprising; a first electrode electrically connected to the wiring; a light emitting layer over the first electrode; and a second electrode over the light emitting layer, wherein the first electrode transmits light, wherein the first base insulating film has a larger refraction factor than the substrate and than the second base insulating film, wherein an optical thickness of the first base insulating film is substantially equal to the integral multiple of λ
/2, andwherein a center wavelength of the light emitted from the light-emitting element is λ
. - View Dependent Claims (22)
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23. A display device comprising:
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a substrate; a first base insulating film over the substrate; a second base insulating film over the first base insulating film; a thin film transistor including a semiconductor layer over the second base insulating film; an insulating film over the thin film transistor; a wiring formed over the insulating film and electrically connected to the semiconductor layer through a contact hole; and a light-emitting element comprising; a first electrode electrically connected to the wiring; a light emitting layer over the first electrode; and a second electrode over the light emitting layer, wherein the first electrode transmits light, wherein the first base insulating film has a smaller refraction factor than the substrate and than the second base insulating film, wherein an optical thickness of the first base insulating film is substantially equal to the integral multiple of λ
/2, andwherein a center wavelength of the light emitted from the light-emitting element is λ
. - View Dependent Claims (24)
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25. A display device comprising:
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a substrate; a base insulating film over the substrate; a thin film transistor over the base insulating film, including; a semiconductor layer, a gate insulating film adjacent to the semiconductor layer, and a gate electrode adjacent to the gate insulating film; a first insulating film over the thin film transistor; a second insulating film over the first insulating film; a wiring formed over the second insulating film and electrically connected to the semiconductor layer through a contact hole; and a light-emitting element comprising; a first electrode electrically connected to the wiring; a light emitting layer over the first electrode; and a second electrode over the light emitting layer, wherein the first electrode transmits light, wherein the base insulating film has a larger refraction factor than the substrate and than the gate insulating film, wherein the first insulating film has a larger refraction factor than the second insulating film and than the gate insulating film, wherein each optical thickness of the base insulating film and the first insulating film is substantially equal to the integral multiple of λ
/2, andwherein a center wavelength of the light emitted from the light-emitting element is λ
. - View Dependent Claims (26)
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27. A display device comprising:
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a substrate; a base insulating film over the substrate; a thin film transistor over the base insulating film, including; a semiconductor layer, a gate insulating film adjacent to the semiconductor layer, and a gate electrode adjacent to the gate insulating film; a first insulating film over the thin film transistor; a second insulating film over the first insulating film; a wiring formed over the second insulating film and electrically connected to the semiconductor layer through a contact hole; and a light-emitting element comprising; a first electrode electrically connected to the wiring; a light emitting layer over the first electrode; and a second electrode over the light emitting layer, wherein the first electrode transmits light, wherein the base insulating film has a smaller refraction factor than the substrate and than the gate insulating film, wherein the first insulating film has a smaller refraction factor than the second insulating film and than the gate insulating film, wherein each optical thickness of the base insulating film and the first insulating film is substantially equal to the integral multiple of λ
/2, andwherein a center wavelength of the light emitted from the light-emitting element is λ
. - View Dependent Claims (28)
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29. A display device comprising:
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a substrate; a base insulating film over the substrate; a thin film transistor including a semiconductor layer over the base insulating film; an insulating film over the thin film transistor; a wiring formed over the insulating film and electrically connected to the semiconductor layer through a contact hole; and a light-emitting element comprising; a first electrode electrically connected to the wiring; a light emitting layer over the first electrode; and a second electrode over the light emitting layer, wherein the first electrode transmits light, wherein the base insulating film has a larger refraction factor than the substrate and than the insulating film, wherein an optical thickness of the base insulating film is substantially equal to the integral multiple of λ
/2, andwherein a center wavelength of the light emitted from the light-emitting element is λ
. - View Dependent Claims (30)
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31. A display device comprising:
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a substrate; a base insulating film over the substrate; a thin film transistor including a semiconductor layer over the base insulating film; an insulating film over the thin film transistor; a wiring formed over the insulating film and electrically connected to the semiconductor layer through a contact hole; and a light-emitting element comprising; a first electrode electrically connected to the wiring; a light emitting layer over the first electrode; and a second electrode over the light emitting layer, wherein the first electrode transmits light, wherein the base insulating film has a smaller refraction factor than the substrate and than the insulating film, wherein an optical thickness of the base insulating film is substantially equal to the integral multiple of λ
/2, andwherein a center wavelength of the light emitted from the light-emitting element is λ
. - View Dependent Claims (32)
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33. A display device comprising:
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a substrate; a base insulating film over the substrate; a thin film transistor including a semiconductor layer over the base insulating film; a first insulating film over the thin film transistor; a second insulating film over the first insulating film; a wiring formed over the second insulating film and electrically connected to the semiconductor layer through a contact hole; and a light-emitting element comprising; a first electrode electrically connected to the wiring; a light emitting layer over the first electrode; and a second electrode over the light emitting layer, wherein the first electrode transmits light, wherein the first insulating film has a larger refraction factor than the second insulating film and than the base insulating film, wherein an optical thickness of the first insulating film is substantially equal to the integral multiple of λ
/2, andwherein a center wavelength of the light emitted from the light-emitting element is λ
. - View Dependent Claims (34)
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35. A display device comprising:
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a substrate; a base insulating film over the substrate; a thin film transistor including a semiconductor layer over the base insulating film; a first insulating film over the thin film transistor; a second insulating film over the first insulating film; a wiring formed over the second insulating film and electrically connected to the semiconductor layer through a contact hole; and a light-emitting element comprising; a first electrode electrically connected to the wiring; a light emitting layer over the first electrode; and a second electrode over the light emitting layer, wherein the first electrode transmits light, wherein the first insulating film has a smaller refraction factor than the second insulating film and than the base insulating film, wherein an optical thickness of the first insulating film is substantially equal to the integral multiple of λ
/2, andwherein a center wavelength of the light emitted from the light-emitting element is λ
. - View Dependent Claims (36)
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37. A display device comprising:
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a substrate; a first base insulating film over the substrate; a second base insulating film over the first base insulating film; a thin film transistor over the second base insulating film, including; a semiconductor layer, a gate insulating film adjacent to the semiconductor layer, and a gate electrode adjacent to the gate insulating film; a first insulating film over the thin film transistor; a second insulating film over the first insulating film; a wiring formed over the second insulating film and electrically connected to the semiconductor layer through a contact hole; and a light-emitting element comprising; a first electrode electrically connected to the wiring; a light emitting layer over the first electrode; and a second electrode over the light emitting layer, wherein the first electrode transmits light, wherein the second base insulating film, the gate insulating film, and the first insulating film are optically one layer, wherein the optically one layer has a larger refraction factor than the second insulating film and than the first base insulating film, wherein an optical thickness of the optically one layer is substantially equal to the integral multiple of λ
/2, andwherein a center wavelength of the light emitted from the light-emitting element is λ
. - View Dependent Claims (38)
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39. A display device comprising:
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a substrate; a first base insulating film over the substrate; a second base insulating film over the first base insulating film; a thin film transistor over the second base insulating film, including; a semiconductor layer, a gate insulating film adjacent to the semiconductor layer, and a gate electrode adjacent to the gate insulating film; a first insulating film over the thin film transistor; a second insulating film over the first insulating film; a wiring formed over the second insulating film and electrically connected to the semiconductor layer through a contact hole; and a light-emitting element comprising; a first electrode electrically connected to the wiring; a light emitting layer over the first electrode; and a second electrode over the light emitting layer, wherein the first electrode transmits light, wherein the second base insulating film, the gate insulating film, and the first insulating film are optically one layer, wherein the optically one layer has a smaller refraction factor than the second insulating film and than the first base insulating film, wherein an optical thickness of the optically one layer is substantially equal to the integral multiple of λ
/2, andwherein a center wavelength of the light emitted from the light-emitting element is λ
. - View Dependent Claims (40)
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41. A display device comprising:
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a substrate; a first base insulating film over the substrate; a second base insulating film over the first base insulating film; a thin film transistor over the second base insulating film, including; a semiconductor layer, a gate insulating film adjacent to the semiconductor layer, and a gate electrode adjacent to the gate insulating film; a first insulating film over the thin film transistor; a second insulating film over the first insulating film; a wiring formed over the second insulating film and electrically connected to the semiconductor layer through a contact hole; and a light-emitting element comprising; a first electrode electrically connected to the wiring; a light emitting layer over the first electrode; and a second electrode over the light emitting layer, wherein the first electrode transmits light, wherein a physical thickness of the first base insulating film is in the range of 120 to 162 nm, wherein a physical thickness of the second insulating film is in the range of 120 to 162 nm, wherein the second base insulating film, the gate insulating film, and the first insulating film are optically one layer, wherein an optical thickness of the optically one layer is substantially equal to the integral multiple of λ
/2, andwherein a center wavelength of the light emitted from the light-emitting element is λ
. - View Dependent Claims (42)
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Specification