Measuring circuit and a method for determining a characteristic of the impedance of a complex impedance element for facilitating characterization of the impedance thereof

• US 7,555,394 B2
• Filed: 07/24/2006
• Issued: 06/30/2009
• Est. Priority Date: 09/17/2003
• Status: Active Grant

• Current Assignee: Analog Devices, Inc.
• Original Assignee: Analog Devices, Inc.
• Inventors: Smith, Sean, Lyden, Colin Gerard, O'Grady, Albert C., Caffrey, James F., Slattery, Colm F., Geraghty, Donal P.
• Primary Examiner(s): Feliciano; Eliseo Ramos
• Assistant Examiner(s): Huynh; Phuong
• Application Number:
  US11/492,606
• Publication Number:
  US 20060276982A1
• Time in Patent Office: 1,072 Days
• Field of Search: 702 57- 59, 702 64- 66, 702 75- 77, 702/117, 324533-534, 324/602, 324/609, 324/633, 324/637, 324/642
• US Class Current: 702/65
• CPC Class Codes: G01R 27/02 Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant by measuring phase angle only G01R25/00

Abstract

A single chip integrated circuit measuring circuit (1) for determining a characteristic of the impedance of an external complex impedance circuit (2) for facilitating characterization of the impedance of the complex impedance circuit (2) comprises a signal generating circuit (7) for generating a variable frequency stimulus signal for applying to the complex impedance circuit (2). A first receiving circuit (10) receives a response signal from the complex impedance circuit (2) in response to the stimulus signal and conditions the response signal. A first analog-to-digital converter (68) converts the conditioned response signal to a first digital output signal, which is read from the first analog-to-digital converter (68) through a first digital output port (14). The response signal from the complex impedance circuit (2) is a current signal, and a current to voltage converter circuit (64) converts the response signal to a voltage signal. A first RMS to DC level converting circuit (70) converts the AC voltage of the response signal to a DC voltage level, and a fourth multiplexer (67) selectively applies the voltage response signal or the DC voltage level signal to the first analog-to-digital converter (68), depending on whether it is desired that the first digital output signal should be indicative of the phase shift or amplitude change in the response signal relative to the stimulus signal. A second receiving circuit (20) receives the stimulus signal, and similarly converts the stimulus signal to a second digital output signal for facilitating comparison of the response signal with the stimulus signal.

Claims

1. A measuring circuit for determining a characteristic of the impedance of a complex impedance element for facilitating characterization of the impedance thereof, the measuring circuit being implemented on a single chip and comprising:

a signal generating circuit for generating an analog stimulus signal of selectable frequency for applying to the complex impedance element; and

a first receiving circuit for receiving an analog response signal from the complex impedance element in response to the stimulus signal, and for producing a first output signal indicative of the characteristic of the impedance of the complex impedance element; and

a signal processing circuit for carrying out a Fast Fourier Transform on the first output signal to produce a third output signal for use in characterization of the impedance of the complex impedance element.

2. A measuring circuit as claimed in claim 1 in which the first receiving circuit is operable for outputting the first output signal to be indicative of one of a phase shift and an amplitude change of the stimulus signal caused by the complex impedance element.

3. A measuring circuit as claimed in claim 2 in which the first receiving circuit is operable for selectively and alternately outputting the first output signal to be indicative of one of the phase shift and the amplitude change of the stimulus signal caused by the complex impedance element.

4. A measuring circuit as claimed in claim 2 in which the first receiving circuit comprises a selectable first converting circuit for converting the analog response signal from the complex impedance element to a voltage signal suitable for comparison with the stimulus signal.

5. A measuring circuit as claimed in claim 4 in which the first converting circuit comprises a selectable first root-mean-square (RMS) to DC voltage converter for converting the analog response signal from the complex impedance element to a DC voltage level corresponding to the RMS voltage value of the analog response signal.

6. A measuring circuit as claimed in claim 1 in which the first receiving circuit comprises a current to voltage converting circuit for converting the analog response signal to an analog voltage signal.

7. A measuring circuit as claimed in claim 1 in which the first receiving circuit comprises a first analog-to-digital converter for converting the analog response signal from the complex impedance element to a digital signal for providing the first output signal as a digital signal.

8. A measuring circuit as claimed in claim 7 in which the first receiving circuit comprises a first storing means for storing the first output signal in digital form.

9. A measuring circuit as claimed in claim 1 in which a calibration circuit is provided on the chip for determining a calibration coefficient for calibrating the first receiving circuit, the calibration circuit comprising a coefficient storing means for storing the calibration coefficient.

10. A measuring circuit as claimed in claim 9 in which a compensating circuit is provided on the chip for selectively applying the calibration coefficient to the first output signal for correcting the first output signal for errors introduced to the response signal by the first receiving circuit.

11. A measuring circuit as claimed in claim 9 in which a first coupling circuit is provided on the chip for selectively applying the stimulus signal to the first receiving circuit for calibration thereof.

12. A measuring circuit as claimed in claim 1 in which a second receiving circuit is provided on the chip for receiving the analog stimulus signal and for outputting a second output signal representative of the stimulus signal for comparison with the first output signal for facilitating a determination of the characteristic of the impedance of the complex impedance element.

13. A measuring circuit as claimed in claim 12 in which the second receiving circuit comprises a second analog-to-digital converter for converting the analog stimulus signal to a digital signal for providing the second output signal as a digital signal.

14. A measuring circuit as claimed in claim 13 in which the second receiving circuit comprises a second storing means for storing the second output signal in digital form.

15. A measuring circuit as claimed in claim 12 in which the second receiving circuit comprises a selectable second RMS to DC voltage converter for converting the analog stimulus signal to a DC signal of voltage level corresponding to the RMS value of the analog stimulus signal.

16. A measuring circuit as claimed in claim 12 in which the second receiving circuit comprises an input signal switching circuit for selectively and alternately applying one of the analog stimulus signal and a signal from a temperature sensor to the second receiving circuit.

17. A measuring circuit as claimed in claim 16 in which the temperature sensor is provided on the chip.

18. A measuring circuit as claimed in claim 12 in which a second coupling circuit is provided on the chip for selectively applying the analog stimulus signal to the second receiving circuit.

19. A measuring circuit as claimed in claim 12 in which the signal processing circuit is adapted for processing the second output signal.

20. A measuring circuit as claimed in claim 1 or claim 15 in which the signal generating circuit comprises a signal conditioning circuit for setting one of the voltage level and the current level of the stimulus signal.

21. A measuring circuit as claimed in claim 1 or claim 15 in which the signal generating circuit comprises a direct digital synthesis frequency signal generator for generating the stimulus signal.

22. A measuring circuit as claimed in claim 21 in which the direct digital synthesis frequency signal generator comprises:

a phase accumulator comprising a counter for incrementing or decrementing its count by a frequency determining digital word to or from a predetermined maximum count value in response to each cycle of a clock signal,

a phase-to-amplitude converter for converting count values from the phase accumulator to digital words representative of amplitude values of the stimulus signal, and

a digital-to-analog converter for converting the digital words from the phase-to-amplitude converter to the stimulus signal.

23. A measuring circuit as claimed in claim 22 in which the phase-to-amplitude converter comprises a look-up table with the digital words representative of the amplitude values of the stimulus signal cross-referenced with count values from zero to the predetermined maximum count value outputted by the phase accumulator.

24. A measuring circuit as claimed in claim 22 in which the stimulus signal generated by the signal generator is of sinusoidal waveform.

25. A measuring circuit as claimed in claim 22 in which a first bypass circuit is provided for applying the count values from the phase accumulator directly to the digital-to-analog converter so that the stimulus signal provided from the digital-to-analog converter is of triangular waveform.

26. A measuring circuit as claimed in claim 22 in which a second bypass circuit bypasses the digital-to-analog converter for applying the count values from the phase accumulator to a comparator for comparing the most significant bit of the count values with a reference value for providing the stimulus signal as a square waveform.

27. A measuring circuit as claimed in claim 22 in which the direct digital synthesis frequency signal generator comprises an adder for summing a phase offset digital word to each count value outputted by the phase accumulator for offsetting the phase of the stimulus signal by a predetermined offset.

28. A measuring circuit as claimed in claim 27 in which the phase offset digital word is selectable for selecting the phase offset of the stimulus signal.

29. A measuring circuit as claimed in claim 22 in which the frequency determining digital word is selectable for selecting the frequency of the stimulus signal.

30. A measuring circuit as claimed in claim 1 or claim 15 in which the measuring circuit is implemented as an integrated circuit.

51. A measuring circuit as claimed in claim 1 in which the signal processing circuit is programmable.

52. A measuring circuit as claimed in claim 19 in which the signal processing circuit is adapted for carrying out a fast fourier transform on the second output signal.

31. A method for determining a characteristic of the impedance of a complex impedance element for facilitating characterization of the impedance thereof, the method comprising acts of:

providing a signal generating circuit on a single chip for generating an analog stimulus signal of selectable frequency for applying to the complex impedance element;

providing a first receiving circuit on the single chip for receiving an analog response signal from the complex impedance element in response to the stimulus signal and for outputting a first output signal indicative of the characteristic of the impedance of the complex impedance element for use in characterization of the impedance of the complex impedance element;

providing a signal processing circuit on the single chip for carrying out a Fast Fourier Transform on the first output signal to produce a third output signal for use in characterization of the impedance of the complex impedance element;

operating the signal generating circuit for applying the stimulus signal to the complex impedance element;

applying an analog response signal from the complex impedance element, responsive to the stimulus signal, to the first receiving circuit;

operating the first receiving circuit for producing the first output signal indicative of the characteristic of the impedance of the complex impedance element; and

operating the signal processing circuit for carrying out a Fast Fourier Transform on the first output signal to produce the third output signal.

32. A method as claimed in claim 31 in which the first receiving circuit is operated for selectively and alternately outputting the first output signal to be indicative of one of a phase shift and an amplitude change of the stimulus signal caused by the complex impedance element.

33. A method as claimed in claim 31 in which the response signal from the complex impedance element is converted in the first receiving circuit to a voltage signal suitable for comparison with the stimulus signal.

34. A method as claimed in claim 33 in which the response signal from the complex impedance element is converted in the first receiving circuit to a DC signal of voltage level corresponding to the RIMS voltage value of the analog response signal.

35. A method as claimed in claim 31 in which the analog response signal from the complex impedance circuit is converted to a digital signal in the first receiving circuit for providing the first output signal as a digital signal.

36. A method as claimed in claim 31 in which the method comprises the further step of fabricating a second receiving circuit on the single chip for receiving the analog stimulus signal and for outputting a second output signal representative of the stimulus signal for comparison with the first output signal for facilitating a determination of the characteristic of the impedance of the complex impedance element.

37. A method as claimed in claim 36 in which the analog stimulus signal is converted to a digital signal in the second receiving circuit for providing the second output signal as a digital signal.

38. A method as claimed in claim 36 in which the analog stimulus signal is converted in the second receiving circuit to a DC signal of voltage level corresponding to the RMS value of the analog stimulus signal.

39. A method as claimed in claim 31 in which the signal generating circuit is provided as a direct digital synthesis frequency signal generator.

40. An integrated circuit for producing a signal indicative of a characteristic of the impedance of a complex impedance element for facilitating characterization of the impedance thereof, the integrated circuit being implemented on a single chip and comprising:

an output terminal through which an analog stimulus signal of selectable frequency is outputted for applying to the complex impedance element;

a signal generating circuit for generating the analog stimulus signal;

a signal conditioning circuit for conditioning the analog stimulus signal generated by the signal generating circuit and for applying the conditioned analog stimulus signal to the output terminal;

a receiving circuit for receiving an analog response signal from the complex impedance element in response to the stimulus signal, and for outputting an output signal indicative of the characteristic of the impedance of the complex impedance element; and

a signal processing circuit for carrying out a Fast Fourier Transform on the output signal to produce a further output signal for use in characterization of the impedance of the complex impedance element.

41. An integrated circuit as claimed in claim 40 in which the signal conditioning circuit is adapted for setting one of the voltage level and the current level of the stimulus signal.

42. An integrated circuit as claimed in claim 40 in which the conditioning circuit is programmable.

43. An integrated circuit as claimed in claim 40 in which the signal conditioning circuit comprises a programmable gain element for selectively setting the maximum voltage amplitude of the analog stimulus signal.

44. An integrated circuit for producing a signal indicative of a characteristic of the impedance of a complex impedance element for facilitating characterization of the impedance thereof, the integrated circuit being implemented on a single chip and comprising:

an output terminal through which a stimulus signal in analog form of selectable frequency is outputted for applying to the complex impedance element,

a direct digital synthesis frequency signal generator for generating the stimulus signal, the direct digital synthesis frequency signal generator comprising;

a phase accumulator comprising a counter for incrementing or decrementing its count by a frequency determining digital word to or from a predetermined maximum count value in response to each cycle of a clock signal,

a phase-to-amplitude converter for converting count values from the phase accumulator to digital words representative of amplitude values of a sinusoidal waveform,

a digital-to-analog converter for selectively converting the digital words produced by the phase accumulator and the phase-to-amplitude converter for selectively producing the stimulus signal in analog form as one of a triangular waveform and a sinusoidal waveform, and for applying the stimulus signal to the output terminal, and

a first switch circuit for selectively coupling the phase accumulator and the phase-to-amplitude converter to the digital-to-analog converter to selectively produce the stimulus signal in analog form as the one of the triangular waveform and the sinusoidal waveform, and

a receiving circuit for receiving a response signal in analog form from the complex impedance element in response to the stimulus signal, and for outputting an output signal indicative of the characteristic of the impedance of the complex impedance element for use in characterization of the impedance of the complex impedance element.

45. An integrated circuit as claimed in claim 44 in which a first bypass means is provided for applying the digital words produced by the phase accumulator to the digital-to-analog converter through the first switch circuit.

46. An integrated circuit as claimed in claim 44 in which a second switch circuit is provided for selectively applying one of the stimulus signals outputted by the digital-to-analog converter and values derived from the digital words produced by the phase accumulator indicative of the positive and negative states of the stimulus signal to the output terminal to selectively produce the stimulus signal in analog form as one of a square waveform, the triangular waveform and the sinusoidal waveform.

47. An integrated circuit as claimed in claim 46 in which a second bypass circuit is provided through which the values indicative of the positive and negative states of the stimulus signal derived from the digital words produced by the phase accumulator are applied to the output terminal through the second switch circuit.

48. An integrated circuit as claimed in claim 47 in which the second bypass circuit comprises a comparator for comparing the digital words produced by the phase accumulator with a reference value for producing the values indicative of the positive and negative states of the stimulus signal.

49. An integrated circuit as claimed in claim 44 in which an adder is provided for summing the respective count values produced by the phase accumulator with an offset determining digital word for generating the stimulus signal with a phase offset.

50. An integrated circuit as claimed in claim 49 in which the value of the offset determining digital word is selectable.

53. An integrated circuit for producing a signal indicative of a characteristic of the impedance of a complex impedance element for facilitating characterization of the impedance thereof, the integrated circuit being implemented on a single chip and comprising:

a signal generating circuit for generating an analog stimulus signal of selectable frequency for applying to the complex impedance element;

a receiving circuit for receiving an analog response signal from the complex impedance element in response to the stimulus signal, and for producing an output signal indicative of the characteristic of the impedance of the complex impedance element; and

a signal processing circuit for carrying out a Fast Fourier Transform on the output signal to produce a further output signal for use in characterization of the impedance of the complex impedance element.

54. An integrated circuit as claimed in claim 53 in which the signal processing circuit is programmable.

55. An integrated circuit as claimed in claim 53 in which the signal generating circuit comprises a signal conditioning circuit for setting one of the voltage level and the current level of the stimulus signal.

56. An integrated circuit as claimed in claim 55 in which the conditioning circuit is programmable.

57. An integrated circuit as claimed in claim 55 in which the signal conditioning circuit comprises a programmable gain element for selectively setting the maximum voltage amplitude of the analog stimulus signal.

58. An integrated circuit as claimed in claim 53 in which a temperature sensor is provided on the chip, and a switching circuit provided on the chip selectively switches the temperature sensor to the receiving circuit.