Micromechanical device having two sensor patterns

• US 7,555,956 B2
• Filed: 07/13/2006
• Issued: 07/07/2009
• Est. Priority Date: 07/13/2005
• Status: Active Grant

• Current Assignee: Robert Bosch GmbH
• Original Assignee: Robert Bosch GmbH
• Inventors: Schelling, Christoph, Benzel, Hubert
• Primary Examiner(s): Caputo; Lisa M
• Assistant Examiner(s): ROY, PUNAM P
• Application Number:
  US11/486,660
• Publication Number:
  US 20070169558A1
• Time in Patent Office: 1,090 Days
• Field of Search: None
• US Class Current: 73/714
• CPC Class Codes: G01L 19/0092 Pressure sensor associated with other sensors, e.g. for measuring acceleration or temperature G01L9/025, G01L9/045, G01L9/065, G01L9/085, G01L9/105, G01L9/125, G01L19/02, G01L19/04 take precedence; measuring two or more variable G01D21/02; temperature sensors with pressure compensation G01K1/26
• CPC Class Codes: G01L 9/0054 integral with a semiconducting diaphragm

Abstract

A micromechanical device and a method for producing this device are provided, two sensor patterns being provided in the semiconductor material to record two mechanical variables, in particular the pressure and the acceleration. The functionality of both sensor patterns is based on the same predefined converter principle.

Claims

1. A micromechanical device comprising:

a semiconductor material, the semiconductor material including a first sensor pattern, the first sensor pattern being for detecting a first mechanical variable, a functionality of the first sensor pattern being based on a predefined converter principle, the semiconductor material further including a second sensor pattern, the second sensor pattern being for detecting a second mechanical variable, a functionality of the second sensor pattern being based on the predefined converter principle;

wherein the first sensor pattern has a first diaphragm introduced into the semiconductor material, and the second sensor pattern has a second diaphragm introduced into the semiconductor material, each diaphragm one of (a) including and (b) being connected to at least one sensor region;

wherein the first sensor pattern has a hermetically sealed first cavity underneath the first diaphragm, and wherein the second diaphragm is provided with support, with the aid of at least one sealed lateral constriction.

2. The device according to claim 1, wherein the first mechanical variable is a pressure.

3. The device according to claim 1, wherein the second mechanical variable is an acceleration.

4. The device according to claim 1, wherein the converter principle is based on a piezoresistive effect in a plurality of sensor regions of the semiconductor material.

5. The device according to claim 1, wherein the diaphragms include monocrystalline silicon.

6. An acceleration and pressure sensor comprising a micromechanical device for detecting at least one of (a) a component of a linear acceleration perpendicular to a substrate plane of the device and (b) a component of an angular acceleration parallel to the substrate plane of the device, the device including:

a semiconductor material, the semiconductor material including a first sensor pattern, the first sensor pattern being for detecting a first mechanical variable, a functionality of the first sensor pattern being based on a predefined converter principle, the semiconductor material further including a second sensor pattern, the second sensor pattern being for detecting a second mechanical variable, a functionality of the second sensor pattern being based on the predefined converter principle;

wherein the first sensor pattern has a first diaphragm introduced into the semiconductor material, and the second sensor pattern has a second diaphragm introduced into the semiconductor material, each diaphragm one of (a) including and (b) being connected to at least one sensor region;

wherein the first sensor pattern has a hermetically sealed first cavity underneath the first diaphragm, and wherein the second diaphragm is provided with support, with the aid of at least one sealed lateral constriction.