Microelectro-mechanical chemical sensor

• US 7,556,775 B2
• Filed: 05/25/2005
• Issued: 07/07/2009
• Est. Priority Date: 05/25/2004
• Status: Active Grant

• Current Assignee: The Government Of The United States Of America, As Represented By The Secretary Of The Navy, the united states of america as represented by the secretary of the navy
• Original Assignee: the united states of america as represented by the secretary of the navy
• Inventors: Voiculescu, Ioana, McGill, Robert Andrew, Fedder, Gary K.
• Primary Examiner(s): Soohoo; Tony G
• Assistant Examiner(s): EOM, ROBERT J
• Application Number:
  US11/136,763
• Publication Number:
  US 20050276726A1
• Time in Patent Office: 1,504 Days
• Field of Search: 422/50, 422/88, 435/6, 73/35
• US Class Current: 422/88
• CPC Class Codes: G01N 2291/0256 Adsorption, desorption, surface mass change, e.g. on biosensors
• CPC Class Codes: G01N 2291/0257 with a layer containing at least one organic compound
• CPC Class Codes: G01N 29/036 by measuring frequency or resonance of acoustic waves

Abstract

A microelectro-mechanical chemical sensor includes an active cantilever beam having a chemically selective material layer disposed thereon and at least one, preferably two, resistors with the resistance corresponding to the cantilever beam deflection. The sensor also has at least two, and preferably four, auxiliary cantilever beams adjacent to the active cantilever and attached to the same substrate, each having a piezoresistor disposed thereon. The piezoresistors are elements of a Wheatstone bridge, and the Wheatstone bridge output indicates the amount of a predetermined target chemical sorbed by the chemically selective material layer. The sensor is electrostatically actuated in order to monitor the resonant frequency.

Claims

1. A microelectronics based chemical sensor comprising:

a first active beam having at least one end attached to a structure and a chemically selective material layer disposed on the first active beam;

excitation means for causing the first active beam to deflect;

a first resistor disposed on the first active beam, the first resistor having a resistance that changes responsive to a deflection of the first active beam; and

two reference cantilevered beams disposed on each side of the first active beam, each of the reference cantilevered beams having a resistor disposed thereon, wherein the first active beam and the reference cantilevered beams are arranged within a same aperture of the structure and extend in a same direction within the aperture,

the first resistor on the first active beam and the resistors on the reference cantilevered beams being elements of a Wheatstone bridge,

wherein an output of the Wheatstone bridge corresponds to an amount of a chemical sorbed by the material layer.

2. A sensor according to claim 1, wherein the first active beam is a cantilevered beam.

3. The sensor according to claim 2, wherein the first active cantilevered beam has a length of between about 50 micrometers and about 300 micrometers and a width of between about 50 micrometers and about 150 micrometers.

4. The sensor according to claim 1, wherein the first resistor and the resistors on the reference cantilevered beams are piezoresistors.

5. A sensor according to claim 1, further comprising:

a second resistor on the first active beam, the second resistor having a resistance corresponding to a deflection of the first beam, the second resistor being an element of a different arm of the Wheatstone bridge than the first resistor on the first active beam and the resistors on the reference cantilevered beams.

6. The sensor according to claim 1, wherein a first reference arm of the Wheatstone bridge includes the resistors disposed on two of the reference cantilevered beams on opposite sides of the first active beam, and a second reference arm of the Wheatstone bridge includes the resistors disposed on a different two of the auxiliary cantilevered beams on opposite sides of the first active beam.

7. The sensor according to claim 1, wherein the resistors on the first active beam and on the reference cantilevered beams comprise polysilicon.

8. The sensor according to claim 1, wherein the Wheatstone bridge measures a resonance frequency of the first active beam.

9. The sensor according to claim 1, wherein the chemically selective material comprises a hexafluoroisopropanol-siloxane polymer.

10. The sensor according to claim 1, wherein the excitation means includes electrical conductors disposed on the first active beam that carry an electrical charge for electrostatic actuation of the first active beam.

11. The sensor according to claim 1, wherein the excitation means includes a plurality of electrically conductive protrusions on the first active beam interdigitated with protrusions on the structure, the protrusions on the first active beam and the protrusions on the structure carrying electrical charges for electrostatic actuation of the first active beam.

12. The sensor according to claim 1, wherein at least two edges of the first active beam have a plurality of electrically conductive protrusions interdigitated with electrically conductive protrusions on the structure extending from the structure toward the first active beam.

13. The sensor according to claim 1, wherein the resistors comprise polysilicon.

14. The sensor according to claim 1, wherein the structure is a CMOS device.

15. The sensor according to claim 1, wherein the chemical is nerve agent simulant dimethylmethylphosphonate or a nerve agent.

16. The sensor according to claim 1, wherein a first of the arms of the Wheatstone bridge includes two of the resistors disposed on two of the reference cantilever beams on opposite sides of the first active beam and closest to the first active beam, and a second of the arms of the Wheatstone bridge includes a different two of the resistors disposed on a different two of the auxiliary cantilevered beams on opposite sides of the first active beam and farthest from the first active beam.

17. The sensor according to claim 1, wherein the reference cantilever beams are substantially free of the chemically selective material layer.

18. A microelectronics based chemical sensor comprising:

an electrostatically actuated first cantilever beam attached at one end to a structure, the first active beam having a chemically selective material layer disposed thereon;

at least a first resistor disposed on the first cantilever beam, the first resistor having a resistance corresponding to a deflection of the first cantilever beam,

a second cantilever beam having a second resistor disposed thereon, the second cantilever beam attached at an end to the structure on one side of the first cantilever beam;

a third cantilever beam having a third resistor disposed thereon, the third cantilever beam attached at an end to the structure between the first cantilever beam and the second cantilever beam;

a fourth cantilever beam having a fourth resistor disposed thereon, the fourth cantilever beam attached at an end to the structure at an opposite side of the first cantilever beam; and

a fifth cantilever beam having a fifth resistor disposed thereon, the fifth cantilever beam attached at an end to the structure between the first cantilever beam and the fourth cantilever beam;

the first, second, third, fourth and fifth resistors being elements of a Wheatstone bridge,

a measuring arm of the Wheatstone bridge comprising the first resistor,

a reference arm of the Wheatstone bridge comprising the second and fourth resistors in series,

and another reference arm of the Wheatstone bridge comprising the third and fifth resistors in series,

the output of the Wheatstone bridge corresponding to the amount of an analyte sorbed by the chemically selective material layer.

19. The sensor according to claim 18, the Wheatstone bridge having an output that corresponds to the resonance frequency of the first cantilever beam.

20. The sensor according to claim 18, wherein the structure is a CMOS chip.

21. The sensor according to claim 18, further comprising:

conductive protrusions on at least one edge of the first cantilever beam, said conductive protrusions being interdigitated with conductive protrusions on the structure, the conductive protrusions carrying electrical charges for electrostatic actuation of the first cantilever beam.

22. The sensor according to claim 18, wherein the chemical is nerve agent simulant dimethylmethylphosphonate or a nerve agent.

23. The sensor according to claim 18, wherein the second, third, fourth, and fifth cantilever beams are substantially free of the chemically selective material layer.

24. The sensor according to claim 18, further comprising:

a sixth resistor arranged on the electrostatically actuated first cantilever beam,

the Wheatstone bridge including another measuring arm comprising the sixth resistor.