Electronic device and wiring with a current induced cooling effect, and an electronic device capable of converting a temperature difference into voltage

• US 7,556,869 B2
• Filed: 09/09/2005
• Issued: 07/07/2009
• Est. Priority Date: 09/13/2004
• Status: Expired due to Fees

• Current Assignee: National Institute of Advanced Industrial Science and Technology (Government of Japan)
• Original Assignee: National Institute of Advanced Industrial Science and Technology (Government of Japan)
• Inventors: Yamamoto, Atsushi, Kubota, Hitoshi, Fukushima, Akio
• Primary Examiner(s): Bernatz; Kevin M.
• Application Number:
  US11/221,863
• Publication Number:
  US 20060056113A1
• Time in Patent Office: 1,397 Days
• Field of Search: None
• US Class Current: 428/816
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: G11B 5/40 Protective measures on heads, e.g. against excessive temperature G11B5/31 takes precedence; protection against wear G11B5/255 ; protective structure of the head: see under structures, e.g. G11B5/3106
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect
• CPC Class Codes: H01L 23/38 Cooling arrangements using the Peltier effect
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: Y10T 428/1193 with interlaminar component [e.g., adhesion layer, etc.]

Abstract

Localized temperature increases inside integrated circuits due to heating at operation are prevented or controlled by electronic devices or wirings with CPP (current-perpendicular-to-plane) structures which have a current cooling effect. A CPP structure refers to a structure comprising a columnar electrically conductive portion and an insulator portion surrounding the conductive portion. The columnar portion is formed from a multilayered structure in a direction perpendicular to the plane of the layers, so as to allow a current to flow from an upper layer to a lower layer (or vice versa). The cooling effect is induced by current at the interface (or a plural of interfaces) of appropriately selected different kinds of materials (which are conductive substances in general, such as metals, semiconductors, and alloys thereof) in the columnar portion due to the Peltier effect when a current flows through the column. Temperature in a minute range is detected by a thermocouple with the CPP structure. The thermocouple has two interfaces of different materials with a proper combination. When a temperature difference exists between the two interfaces, a voltage which corresponds to a product of the temperature difference and the Peltier coefficient at the interface is produced. In the same manner, the intensity of the infrared can be also measured.

Claims

1. A semiconductor integrated circuit having a multilayered structure, comprising:

a heat-generating element; and

a CPP-CIC wiring for electrically connecting between a ground and said heat-generating element and/or between a power supply and said heat-generating element,

wherein said CPP-CIC wiring comprises a columnar portion comprising thin films or layers layered in a direction perpendicular to planes of the films or layers,

wherein a current flows along said columnar portion, and said CPP-CIC wiring functioning solely as a lead wire to a power supply and/or to the ground provides no electrically active function,

wherein said CPP-CIC wiring includes a heat-generating interface and a heat-absorbing interface, the heat-absorbing interface being between different kinds of materials,

wherein said different kinds of materials are selected from materials which produce a Peltier cooling effect at said heat-absorbing interface when a current flows therethrough, and a Peltier heating effect at said heat-generating interface when a current flows therethrough, and

wherein said heat-absorbing interface is disposed such that the heat generated by said heat-generating element can be absorbed by said heat-absorbing interface.

2. The semiconductor integrated circuit according to claim 1,

wherein said heat-generating interface is disposed at an outer-most portion of the integrated circuit.

3. The semiconductor integrated circuit according to claim 1,

wherein a radiator is disposed at said heat-generating interface.

4. The semiconductor integrated circuit according to claim 1,

wherein said CPP-CIC wiring includes a plurality of wirings connected in parallel.

5. The semiconductor integrated circuit according to claim 1,

wherein said CPP-CIC wiring includes a plurality of wirings arranged in a array.

6. The semiconductor integrated circuit according to claim 1,

wherein said CPP-CIC wiring includes a plurality of wirings disposed around said heat-generating element.